STL260N4LF7

STL260N4LF7 Datasheet N-channel 40 V, 0.85 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features D(5, 6, 7, 8) 8 7 5 6 VDS RDS(on ) max. ID STL260N4LF7 40 V 1.1 mΩ 120 A • Among the lowest RDS(on) on the market • • Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • G(4) Order code Switching applications Description 1 2 3 4 Top View S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. AM15540v2 Product status link STL260N4LF7 Product summary Order code STL260N4LF7 Marking 260N4LF7 Package PowerFLAT 5x6 Packing Tape and reel DS11156 - Rev 5 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STL260N4LF7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage 20 V ID (1) Drain current (continuous) at TC = 25 °C 120 A Drain current (continuous) at TC = 100 °C 120 A Drain current (pulsed) 480 A Drain current (continuous) at Tpcb = 25 °C 50 A Drain current (continuous) at Tpcb = 100 °C 35 A Drain current (pulsed) 200 A Total power dissipation at TC = 25 °C 188 W Total power dissipation at Tpcb = 25 °C 4.8 W -55 to 175 °C ID (1) IDM (2) (1) ID (3) ID (3) IDM (2) (3) PTOT (1) PTOT (3) Tstg Storage temperature range Tj Operating junction temperature range 1. This value is rated according to Rthj-case and limited by package 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-pcb Table 2. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter Value Unit Thermal resistance junction-case 0.8 °C/W Thermal resistance junction-pcb 31.3 °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu DS11156 - Rev 5 page 2/15 STL260N4LF7 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 40 V 1 µA IGSS Gate body leakage current VDS = 0 V, VGS= 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source on-resistance V(BR)DSS 40 V 1.2 VGS = 10 V, ID = 25 A 0.85 1.1 mΩ VGS = 4.5 V, ID = 25 A 1.2 1.4 mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 50 A, VGS= 0 to 4.5 V (see Figure 14. Test circuit for gate charge behavior) Min. Typ. Max. Unit - 6000 - pF - 1700 - pF - 170 - pF - 42 - nC - 16 - nC - 14 - nC Table 5. Switching times Symbol td(on) tr td(off) tf DS11156 - Rev 5 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD= 20 V, ID = 25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Min. Typ. Max. Unit - 21 - ns - 14 - ns - 74 - ns - 23 - ns page 3/15 STL260N4LF7 Electrical characteristics Table 6. Source-drain diode Symbol VSD (1) trr Qrr IRRM Parameter Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions ISD = 50 A, VGS = 0 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) Min. Typ. Max. Unit - 1 V - 71 ns - 100 nC - 2.8 A ID = 50 A, di/dt = 100 A/µs, VDD = 32 V, 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS11156 - Rev 5 page 4/15 STL260N4LF7 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GIPD2005160L48LSOA ID (A)Operation in this area is GIPD2005160L48LZTH K limited by max. RDS(on) 102 100µs 101 10-1 1ms 100 Tj ≤ 175 °C Tc = 25 °C single pulse 100 101 10-1 10-1 10ms VDS (V) Figure 3. Output characteristics GIPD2005160L48LOCH ID (A) V GS = 4, 5, 6, 7, 8, 9, 10 V V GS = 3 V 120 10-2 10-5 10-4 10-2 10-3 10-1 tp (s) Figure 4. Transfer characteristics ID (A) GIPD2005160L48LTCH V DS = 6 V 400 300 V GS = 2.6 V 80 200 40 100 V GS = 2 V 0 0 2 4 6 V DS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GADG110620191139QVG 0 T J = 25 °C T J = 175 °C 0 1 RDS(on) (mΩ) GADG100620191230RID VGS = 4.5V 1.2 VDS = 20 V 8 V GS (V) Figure 6. Static drain-source on-resistance 1.3 10 T J = -55 °C 3 4 2 ID = 50 A 1.1 6 1.0 4 2 0 0 DS11156 - Rev 5 VGS = 10V 0.9 0.8 15 30 45 60 75 Qg (nC) 0.7 0 10 20 30 40 50 ID (A) page 5/15 STL260N4LF7 Electrical characteristics (curves) Figure 7. Capacitance variations C (pF) Figure 8. Normalized on-resistance vs temperature R DS(on) (norm.) 2.0 GADG110620191139CVR GIPD2005160L48LRON VGS = 10 V ID = 25 A 1.8 104 CISS 1.6 1.4 COSS 103 1.2 CRSS 102 1.0 0.8 101 10-1 100 0.6 -75 VDS (V) 101 25 75 125 175 T j (ºC) Figure 10. Normalized gate threshold voltage vs temperature Figure 9. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) -25 GADG110620191141BDV VGS(th) (norm.) GADG110620191140VTH 1.2 1.08 1.0 ID = 2 mA 1.04 0.8 1.00 0.6 ID = 250 µA 0.4 0.96 0.2 0.92 -75 -25 25 75 125 175 0.0 -75 Tj (°C) -25 25 75 125 175 Tj (°C) Figure 11. Source-drain diode forward characteristics VSD (V) GADG110620191141SDF 1.0 TJ = -55 °C 0.8 TJ = 25 °C 0.6 0.4 TJ = 175 °C 0.2 0.0 0 DS11156 - Rev 5 10 20 30 40 50 ISD (A) page 6/15 STL260N4LF7 Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS11156 - Rev 5 page 7/15 STL260N4LF7 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DS11156 - Rev 5 page 8/15 STL260N4LF7 PowerFLAT™ 5x6 type C package information 4.1 PowerFLAT™ 5x6 type C package information Figure 18. PowerFLAT™ 5x6 type C package outline Bottom view Side view Top view 8231817_typeC_Rev18 DS11156 - Rev 5 page 9/15 STL260N4LF7 PowerFLAT™ 5x6 type C package information Table 7. PowerFLAT™ 5x6 type C package mechanical data Dim. mm Min. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e DS11156 - Rev 5 Typ. 0.50 4.45 1.27 E 5.95 6.15 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.05 1.35 L 0.725 1.025 L1 0.05 θ 0° 0.15 6.35 0.25 12° page 10/15 STL260N4LF7 PowerFLAT™ 5x6 type C package information Figure 19. PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_18 DS11156 - Rev 5 page 11/15 STL260N4LF7 PowerFLAT 5x6 packing information 4.2 PowerFLAT 5x6 packing information Figure 20. PowerFLAT 5x6 tape (dimensions are in mm) (I) Measured from centreline of sprocket hole to centreline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ±0.20. Base and bulk quantity 3000 pcs All dimensions are in millimeters (III) Measured from centreline of sprocket hole to centreline of pocket 8234350_Tape_rev_C Figure 21. PowerFLAT 5x6 package orientation in carrier tape Pin 1 identification DS11156 - Rev 5 page 12/15 STL260N4LF7 PowerFLAT 5x6 packing information Figure 22. PowerFLAT 5x6 reel DS11156 - Rev 5 page 13/15 STL260N4LF7 Revision history Table 8. Document revision history Date Revision 25-Aug-2015 1 01-Oct-2015 2 08-Feb-2016 3 Changes First release. Updated section electrical characteristics. Minor text changes. Updated title. Updated Table 2: "Absolute maximum ratings", Table 5: "Dynamic" and Table 6: "Switching times". Minor text changes. Modified: Table 4: "On/off-state", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source-drain diode" 13-May-2016 4 Updated Section 4: "Package information" Added: Section 2.1: "Electrical characteristics (curves)" Minor text changes Removed maturity status indication from cover page. The document status is production data. 04-Jul-2019 5 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes DS11156 - Rev 5 page 14/15 STL260N4LF7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11156 - Rev 5 page 15/15