STP130N8F7

STP130N8F7 N-channel 80 V, 5.0 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features TAB 1 2 Order code VDS RDS(on) max. ID PTOT STP130N8F7 80 V 5.8 mΩ 80 A 205 W     3 TO-220 Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications  Figure 1: Internal schematic diagram Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. D(2, TAB) G(1) S(3) AM01475v1_noZen Table 1: Device summary Order code Marking Package Packing STP130N8F7 130N8F7 TO-220 Tube March 2017 DocID027247 Rev 2 This is information on a product in full production. 1/13 www.st.com Contents STP130N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220 package information ........................................................... 10 Revision history ............................................................................ 12 DocID027247 Rev 2 STP130N8F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC= 25 °C 80 A ID Drain current (continuous) at TC= 100 °C 80 A IDM(1) Drain current (pulsed) 320 A PTOT Total dissipation at TC= 25 °C 205 W EAS(2) Single pulse avalanche energy 320 mJ -55 to 175 °C Value Unit Tj Operating junction temperature range Tstg Storage temperature range Notes: (1)Pulse width is limited by safe operating area (2)Starting Tj =25 °C, ID = 40 A, VDD = 40 V Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.73 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W DocID027247 Rev 2 3/13 Electrical characteristics 2 STP130N8F7 Electrical characteristics (T CASE= 25 °C unless otherwise specified) Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Max. 80 Unit V 1 µA VGS= 0 V, VDS= 80 V, TJ=125 °C(1) 100 µA Gate-source leakage current VDS= 0 V, VGS= 20 V 100 nA Gate threshold voltage Static drain-source on-resistance VDS= VGS, ID= 250 µA 4.5 V 5.8 mΩ Zero gate voltage drain current IGSS RDS(on) Typ. VGS= 0 V, VDS= 80 V IDSS VGS(th) VGS= 0 V, ID= 250 µA Min. 2.5 5.0 VGS= 10 V, ID= 40 A Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Ciss Parameter Test conditions Min. Typ. Max. Unit - 4500 - pF - 1100 - pF - 110 - pF - 60 - nC - 25 - nC - 15 - nC Test conditions Min. Typ. Max. Unit VDD= 40 V, ID= 40 A, RG = 4.7 Ω, VGS= 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 140 - ns - 210 - ns - 190 - ns - 120 - ns Input capacitance VDS= 25 V, f = 1 MHz, VGS= 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD= 40 V, ID= 80 A, VGS= 0 to 10 V (see Figure 14: "Test circuit for gate charge behavior" ) Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time DocID027247 Rev 2 STP130N8F7 Electrical characteristics Table 7: Source drain diode Symbol VSD(1) Parameter Test conditions Min. Typ. Max. Unit 1.2 V Forward on voltage ISD= 80 A, VGS= 0 V - trr Reverse recovery time - 45 ns Qrr Reverse recovery charge - 54 nC IRRM Reverse recovery current ISD= 80 A, di/dt = 100 A/µs, VDD= 80 V, Tj= 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 2.5 A Notes: (1)Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID027247 Rev 2 5/13 Electrical characteristics 2.1 6/13 STP130N8F7 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Normalized thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Capacitance variations Figure 7: Gate charge vs. gate-source voltage DocID027247 Rev 2 STP130N8F7 Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Source-drain diode forward characteristics Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Normalized V(BR)DSS vs. temperature DocID027247 Rev 2 7/13 Test circuits 3 8/13 STP130N8F7 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID027247 Rev 2 STP130N8F7 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027247 Rev 2 9/13 Package information 4.1 STP130N8F7 TO-220 package information Figure 19: TO-220 type A package outline 10/13 DocID027247 Rev 2 STP130N8F7 Package information Table 8: TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID027247 Rev 2 11/13 Revision history 5 STP130N8F7 Revision history Table 9: Document revision history Date Revision 04-Dec-2014 1 First release 2 Datasheet status promoted from preliminary to production data. Updated Section 1: "Electrical ratings" and Section 2: "Electrical characteristics". Minor text changes 09-Mar-2017 12/13 Changes DocID027247 Rev 2 STP130N8F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID027247 Rev 2 13/13