STF13N95K3, STFI13N95K3,
STP13N95K3, STW13N95K3
N-channel 950 V, 0.68 Ω typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247
Datasheet − production data
Features
Order codes
VDSS RDS(on)max
ID
PTOT
STF13N95K3
STFI13N95K3
STP13N95K3
40 W
950 V
< 0.85 Ω
STW13N95K3
10 A
TO-220FP
1
190 W
2
TAB
■
Gate charge minimized
■
Extremely large avalanche performance
■
100% avalanche tested
■
Very low intrinsic capacitance
■
Zener-protected
Figure 1.
3
TO-247
TO-220
Applications
■
I 2 PAKFP
Internal schematic diagram
Switching applications
D(2 or TAB)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
STF13N95K3
TO-220FP
I2PAKFP
STFI13N95K3
13N95K3
Tube
STP13N95K3
TO-220
STW13N95K3
TO-247
June 2012
This is information on a product in full production.
Packaging
Doc ID15685 Rev 3
1/19
www.st.com
19
Contents
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
1
Electrical ratings
Electrical ratings
.
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220
TO-220FP
TO-247
I2PAKFP
VDS
Drain source voltage
950
VGS
Gate- source voltage
± 30
ID
ID
Drain current (continuous) at TC = 25 °C
10
Unit
V
V
10
(1)
(1)
A
Drain current (continuous) at TC = 100 °C
6
6
A
IDM (2)
Drain current (pulsed)
40
40 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
IAR
Max current during repetitive or single
pulse avalanche (pulse width limited by
Tjmax )
13
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
400
mJ
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
dv/dt (3)
Tj
Tstg
2500
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
V
9
V/ns
- 55 to 150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VPeak ≤V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-amb max
Doc ID15685 Rev 3
TO-247
0.66
62.5
50
TO-220FP
Unit
I2PAKFP
3.13
°C/W
62.5
°C/W
3/19
Electrical characteristics
2
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 950V,
VDS = 950V, Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID= 5 A
0.68
0.85
Ω
Typ.
Max.
Unit
V(BR)DSS
Table 5.
Symbol
950
3
V
Dynamic
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
Min.
1620
VDS =100 V, f=1 MHz, VGS=0
-
117
pF
-
1.2
Co(tr)(1)
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
f = 1MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 760 V, ID = 10 A
VGS =10 V
(see Figure 20)
pF
pF
-
115
-
pF
-
131
-
pF
-
2.3
-
Ω
-
51
10
30
-
nC
nC
nC
VGS = 0, VDS = 0 to 760 V
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
1.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 475 V, ID = 5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
Electrical characteristics
Min.
Typ.
Max.
Unit
-
18
16
50
21
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
-
10
40
mA
A
1.6
V
Source drain diode
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 10 A, VGS=0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 21)
-
500
9
36
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C(see
Figure 21)
-
624
11
37
ns
µC
A
Min.
Typ.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
BVGSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage Igs ± 1mA, (open drain)
30
Max.
-
Unit
V
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID15685 Rev 3
5/19
Electrical characteristics
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
and I2PAKFP
Figure 5.
Thermal impedance for TO-220
Figure 7.
Thermal impedance for TO-247
S
/
,I PE
M RA
ITE TIO
D N
BY IN
M TH
AX IS
2 AR E
$ A
3 IS
ON
Thermal impedance for TO-220FP
and I2PAKFP
!-V
)$
!
Figure 3.
S
MS
MS
4J #
Figure 4.
4C #
3INGLE
PULSE
Safe operating area for TO-220
!-V
N
O
S
S
$3
/
,IM PERA
ITE TION
D IN
BY T
M HIS
AX A
2 RE
A
IS
)$
!
6$36
MS
MS
4J #
4C #
3INGLE
PULSE
Figure 6.
6$36
Safe operating area for TO-247
!-V
)$
!
S
S
/
,IM PERA
ITE TION
D IN
BY T
M HIS
AX A
2 RE
$3 AI
S
O
N
MS
4J #
MS
4C #
3INGLE
PULSE
6/19
6$36
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 8.
Output characteristics
Figure 9.
!-V
)$ !
6'3 6
Electrical characteristics
Transfer characteristics
!-V
)$ !
6$3 6
6
6
6
6$36
6'36
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
!-V
6$3 6
6'3 6
6$$ 6
6$3
)$ !
/HM
!-V
2$3ON
6'3 6
1GN#
Figure 12. Capacitance variations
%OSS
*
#ISS
)$!
Figure 13. Output capacitance stored energy
!-V
#
P&
!-V
#OSS
#RSS
6$36
Doc ID15685 Rev 3
6$36
7/19
Electrical characteristics
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 14. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
Figure 15. Normalized on-resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
4* #
Figure 17. Normalized BVDSS vs temperature
!-V
63$ 6
4* #
!-V
2$3ON
NORM
4*
#
!-V
"6$33
NORM
4* #
4* #
)3$!
Figure 18. Maximum avalanche energy vs
starting Tj
!-V
%!3 M*
)$ !
6$$ 6
8/19
4* #
Doc ID15685 Rev 3
4* #
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID15685 Rev 3
10%
AM01473v1
9/19
Package mechanical data
4
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID15685 Rev 3
11/19
Package mechanical data
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Figure 25. TO-220FP drawing
7012510_Rev_K_B
12/19
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Table 10.
Package mechanical data
I2PAKFP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 26. I2PAKFP drawing
REV!
Doc ID15685 Rev 3
13/19
Package mechanical data
Table 11.
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/19
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Package mechanical data
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID15685 Rev 3
15/19
Package mechanical data
Table 12.
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
16/19
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
Doc ID15685 Rev 3
5.70
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Package mechanical data
Figure 28. TO-247 drawing
0075325_G
Doc ID15685 Rev 3
17/19
Revision history
5
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
Revision history
Table 13.
Document revision history
Date
Revision
15-May-2009
1
First release.
02-Sep-2010
2
Document status promoted from preliminary data to datasheet.
3
Added new device in I²PAKFP.
Table 1: Device summary, Table 2: Absolute maximum ratings,
Table 3: Thermal data, Figure 2: Safe operating area for TO220FP and I2PAKFP, Figure 3: Thermal impedance for TO220FP and I2PAKFP have been modified accordingly.
Table 10: I2PAKFP mechanical data and Figure 26: I2PAKFP
drawing have been added.
21-Jun-2012
18/19
Changes
Doc ID15685 Rev 3
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3
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