ZMM3V3

ZMM1...ZMM75 Silicon Epitaxial Planar Zener Diodes MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E24 standard. Smaller voltage tolerances and higher Zener voltages are upon request. LL-34 These diodes are also available in DO-35 case with the type designation BZX55C... H C Absolute Maximum Ratings (Ta = 25 OC) Parameter E T M E S Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range 1) Symbol Tstg Valid provided that electrodes are kept at ambient temperature Value Unit 1) mW 500 175 O - 55 to + 175 O C C Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 100 mA 1) Symbol RthA VF Max. 0.3 1 1) Unit K/mW V Valid provided that electrodes are kept at ambient temperature SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :17/08/2011 Rev 01 ZMM1...ZMM75 Characteristics at Ta = 25 OC Zener Voltage Range Type VZnom 2) ZMM1 1) Dynamic Resistance Reverse Leakage Current o Temp. Coefficient of Zener Voltage VZT at lZT ZZT ZZK at IZK Ta = 25 OC Ta = 125 C at VR (V) (V) (mA) Max. (Ω) Max. (Ω) (mA) Max. (µA) Max. (µA) (V) TKvz (%/K) 0.75 0.7...0.8 5 8 50 1 - - - -0.26...-0.23 ZMM2V0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06 ZMM2V2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06 ZMM2V4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06 ZMM2V7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06 ZMM3V0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05 ZMM3V3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05 ZMM3V6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05 ZMM3V9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05 ZMM4V3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03 ZMM4V7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02 ZMM5V1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02 ZMM5V6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05 ZMM6V2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06 H C E T M E S ZMM6V8 6.8 6.4...7.2 5 8 150 1 0.1 2 3 0.03...0.07 ZMM7V5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07 ZMM8V2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08 ZMM9V1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09 ZMM10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.1 ZMM11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11 ZMM12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11 ZMM13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11 ZMM15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11 ZMM16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11 ZMM18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11 ZMM20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.03...0.11 ZMM22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12 ZMM24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12 ZMM27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12 ZMM30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12 ZMM33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12 ZMM36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12 ZMM39 39 37...41 2.5 90 500 0.5 0.1 5 30 0.04...0.12 ZMM43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12 ZMM47 47 44...50 2.5 110 600 0.5 0.1 5 36 0.04...0.12 ZMM51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12 ZMM56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12 ZMM62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 ZMM68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 ZMM75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 1) Tested with pulses tp = 20 ms. 2) The ZMM1 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode electrode to the negative pole. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :17/08/2011 Rev 01 ZMM1...ZMM75 Breakdown characteristics Tj = constant (pulsed) mA 50 ZMM... Tj=25o C ZMM 2.7 ZMM 1 Iz ZMM 3.9 ZMM 3.3 ZMM 6.8 ZMM 4.7 40 ZMM 8.2 ZMM 5.6 30 H C 20 Test current Iz 5mA 10 E T M E S 0 0 1 2 3 4 5 7 6 8 Vz Breakdown characteristics Tj = constant (pulsed) mA 30 ZMM 10 10 V 9 ZMM... Tj=25o C ZMM 12 Iz ZMM 15 20 ZMM 18 ZMM 22 ZMM 27 Test current Iz 5mA 10 ZMM 33 ZMM 36 0 0 10 20 30 40 V Vz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :17/08/2011 Rev 01 ZMM1...ZMM75 Breakdown characteristics Tj = constant (pulsed) ZMM... mA 10 Iz Tj=25o C ZMM 39 ZMM 51 ZMM 43 ZMM 47 8 Test current Iz 5mA H C 6 4 2 E T M E S 0 0 10 20 30 40 50 60 70 Vz 80 90 100 V Admissible power dissipation versus ambient temperature Forward characteristics Valid provided that electrodes are kept at ambient temperature. mA 10 ZMM... mW 500 ZMM... 3 10 2 iF P tot 400 10 o Tj=100 C 1 300 o Tj=25 C 10 10 10 -1 200 -2 -3 100 10 -4 10 -5 0 0 0.2 0.4 0.6 0.8 1V VF 0 200o C 100 Tamb SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :17/08/2011 Rev 01