T12-G

® B BTA/BTB12 series 12A Triacs logic level 1 MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q ) 1 Value 12 600 and 800 5 to 50 Unit A V mA A2 G A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) Parameter RMS on-state current (full sine wave) A1 A2 G D2PAK (T12-G) A2 A1 A2 G A1 A2 G TO-220AB Insulated (BTA12) TO-220AB (B Value Tc = 105°C 12 Tc = 90°C t = 20 ms t = 16.7 ms 120 126 78 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 50 VDRM/VRRM + 100 Unit A A D²PAK/TO-220AB TO-220AB Ins. ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 50 Hz F = 60 Hz I ²t dI/dt tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs A² s A/µs V A W °C VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj S Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 4 1 - 40 to + 150 - 40 to + 125 1/4 BTA/BTB12 series 12A Triacs logic level ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol Test Conditions Quadrant T12 T1235 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V RL = 30 Ω I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. I - III II VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C (dV/dt)c = 10 V/µs Without snubber MIN. MIN. MAX. 35 50 60 500 6.5 10 10 15 20 3.5 1 35 TW 5 SW 10 1.3 0.2 15 25 30 40 6.5 2.9 35 50 60 500 6.5 50 70 80 1000 12 V/µs A/ms BTA/BTB12 CW 35 BW 50 mA V V mA mA Unit VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 100 mA IG = 1.2 IGT (dI/dt)c (2) (dV/dt)c = 0.1 V/µs ■ STANDARD (4 Quadrants) Symbol Test Conditions Quadrant BTA/BTB12 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM RL = 3.3 kΩ Tj = 125°C IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 5.3 A/ms RL = 30 Ω I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/µs V/µs B 50 100 mA V V mA mA Unit STATIC CHARACTERISTICS Symbol VT (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 17 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 35 5 1 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM 2/4 12A Triacs logic level OTHER INFORMATION Part Number BTA/BTB12-xxxyz BTA/BTB12-xxxyzRG T1235-xxxG T1235-xxxG-TR Marking BTA/BTB12-xxxyz BTA/BTB12-xxxyz T1235xxxG T1235xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel BTA/BTB12 series Note: x xx = voltage, yy = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P (W) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 IT(RMS)(A) Fig. 2-1: RMS on-state current versus case temperature (full cycle). IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB/T12 BTA Tc(°C) 5 6 7 8 9 10 11 12 0 25 50 75 100 125 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. IT(RMS) (A) 3.5 3.0 2.5 2.0 D2PAK (S=1cm2) Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Zth(j-c) 1E-1 Zth(j-a) 1.5 1.0 0.5 0.0 0 25 Tamb(°C) 50 75 100 125 1E-2 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 3/4 12A Triacs logic level Fig. 4: values). ITM (A) 100 130 120 110 100 90 80 70 60 50 40 30 20 10 0 BTA/BTB12 series On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITSM (A) t=20ms Tj max Non repetitive Tj initial=25°C One cycle 10 Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ Repetitive Tc=90°C VTM(V) Number of cycles 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) 1000 dI/dt limitation: 50A/µs Tj initial=25°C Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 IGT ITSM 1.5 100 I²t IH & IL 1.0 0.5 Tj(°C) tp (ms) 10 0.01 0.10 1.00 10.00 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.8 2.4 2.0 C SW Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 4.5 4.0 3.5 3.0 2.5 TW 1.6 1.2 0.8 0.4 B BW/CW/T1235 2.0 1.5 1.0 0.5 (dV/dt)c (V/µs) (dV/dt)c (V/µs) 1.0 10.0 100.0 0.0 0.1 1.0 10.0 100.0 0.0 0.1 4/4