VN0635

VN0635 VN0640 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V † MIL visual screening available RDS(ON) (max) 10Ω 10Ω ID(ON) (min) 0.75A 0.75A Order Number / Package TO-92 VN0635N3 VN0640N3 Die† VN0635ND VN0640ND Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C SGD TO-92 Note: See Package Outline section for dimensions. 7-171 VN0635/VN0640 Thermal Characteristics Package TO-92 ID (continuous)* 0.25A ID (pulsed) 1.5A Power Dissipation @ TC = 25°C 1W °C/W 125 θjc °C/W 170 θja IDR* 0.25A IDRM 1.5A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0640 VN0635 Min 400 350 1.0 4.0 -4.0 100 10 1 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.75 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 100 160 105 25 10 130 75 20 10 10 20 10 1.8 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 0.5A, RGEN = 25Ω pF 8.0 8.0 10 0.75 Ω %/°C m Ω 0.6 V mV/°C nA µA mA VGS = VDS , ID = 2mA VGS = VDS , ID = 2mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 100mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA VDS = 25V, ID = 500mA VGS = 0V, VDS = 25V f = 1 MHz Typ Max Unit V Conditions VGS = 0V, ID = 2mA A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-172 VN0635/VN0640 Typical Performance Curves Output Characteristics 1.25 VGS = 10V 0.75 Saturation Characteristics 8V VGS = 1 0V 6V 0.6 5V 1.0 8V ID (amperes) 0.5 4V 0.25 3V 0 0 10 20 30 40 50 ID (amperes) 0.75 6V 0.45 4V 0.3 0.15 3V 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 0.40 50 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V TA = -55°C 0.32 40 GFS (siemens) TA = 25°C PD (watts) 0.24 30 0.16 TA = 150°C 20 0.08 10 TO-92 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC (°C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 1.0 0.6 0.4 0.1 TO-92 (DC) TO-92 PD = 1W TC = 25°C 0.2 TC = 25°C 0.01 1 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 7-173 VN0635/VN0640 Typical Performance Curves BVDSS Variation with Temperature 20 1.1 16 On-Resistance vs. Drain Current VGS = 5V VGS = 10V BVDSS (normalized) RDS(ON) (ohms) -50 0 50 100 150 12 1.0 8 4 0.9 0 0 0.4 0.8 1.2 1.6 2.0 Tj (°C) Transfer Characteristics 2.5 1.4 ID (amperes) V(th) and RDS Variation with Temperature 2.5 VDS = 25V 2.0 1.2 2.0 ID (amperes) V(th) @ 2mA 1.0 1.5 1.5 TA = -55°C 25°C 1.0 0.8 1.0 0.5 150°C 0.6 0.5 0 0 2 4 6 8 10 0.4 -50 0 50 100 0 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj(°C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V C (picofarads) VGS (volts) VDS = 40V 6 CISS 100 180 pF 4 50 COSS CRSS 0 0 10 20 30 40 2 100 pF 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 7-174 RDS(ON) (normalized) VGS(th) (normalized) RDS @ 10V, 0.5A