LL4150

LL4150 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 600 mA • Pb / RoHS Free HIGH SPEED SWITCHING DIODE MiniMELF (SOD-80C) Cathode Mark φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Mounting Pad Layout 0.098 (2.50) Max. 0.049 (1.25)Min. 0.079 (2.00)Min. MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g 0.197 (5.00) REF Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum Continuous Current Maximum Average Forward Current Maximum Surge Forward Current at t < 1s and Tj = 25°C Maximum Power Dissipation Maximum Repetitive Peak Forward Current Thermal Resistance Junction to Ambient Air Maximum Junction Temperature Storage Temperature Range (1) 25 °C ambient temperature unless otherwise specified.) Symbol VRM VR IF IF(AV) IFSM PD IFRM RθJA TJ TS Value 75 50 200 150 0.5 500 600 350 175 -65 to + 175 Unit V V mA mA A mW mA °C/W °C °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Diode Capacitance Symbol IR Test Condition V R = 50 V VR = 50 V , Tj = 150 °C IF = 100 mA IF = 200 mA f = 1MHz ; VR = 0 IF = 10 mA to 200 mA to IR = 10 mA to 200 mA; RL = 100 Ω ; measured at IR = 0.1x IF Min. - Typ. - Max. 0.1 100 0.92 1.0 2.5 Unit µA µA V pF VF Cd Reverse Recovery Time Trr - - 4 ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( LL4150 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 200 1000 AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (mA) 150 Forward Current , IF (mA) 100 10 100 1 TJ = 25°C 50 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERSE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 103 1.0 Diode Capacitance , Cd (pF) Reverse Current , IR (µA) 102 VR = 75V 10 0.9 0.8 0.7 f = 1MHz; TJ = 25°C 1 0.6 10-1 0.5 0.4 0 10 20 10-2 0 100 200 Reverse Voltage , VR (V) Junction Temperature, Tj (°C) Page 2 of 2 Rev. 02 : March 25, 2005