BYV37, BYV38
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Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
949539
DESIGN SUPPORT TOOLS
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Models
Available
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
APPLICATIONS
• Fast “soft recovery” rectification diode
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
BYV38
BYV38-TR
5000 per 10" tape and reel
MINIMUM ORDER QUANTITY
25 000
BYV38
BYV38-TAP
5000 per ammopack
25 000
PART
TYPE DIFFERENTIATION
PACKAGE
BYV37
VR = 800 V; IF(AV) = 2 A
SOD-57
BYV38
VR = 1000 V; IF(AV) = 2 A
SOD-57
PARTS TABLE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Peak forward surge current
TEST CONDITION
See electrical characteristics
PART
SYMBOL
BYV37
BYV38
tp = 10 ms, half sine wave
Average forward current
Non repetitive reverse avalanche energy
I(BR)R = 0.4 A
Junction and storage temperature range
VALUE
UNIT
VR = VRRM
800
V
VR = VRRM
1000
V
IFSM
50
A
IF(AV)
2
A
ER
10
mJ
Tj = Tstg
-55 to +175
°C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
Lead length l = 10 mm, TL = constant
RthJA
45
UNIT
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
Rev. 1.8, 21-Feb-18
Document Number: 86045
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV37, BYV38
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 1 A
VF
-
1
1.1
V
VR = VRRM
IR
-
-
5
μA
μA
Forward voltage
Reverse current
Reverse recovery time
PART
UNIT
VR = VRRM, Tj = 150 °C
IR
-
-
150
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
300
ns
VR = 4 V, f = 1 MHz
CD
-
15
-
pF
Diode capacitance
120
1000
VR = VRRM
100
IR - Reverse Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
80
60
l
l
40
10
20
TL = constant
0
0
5
10
15
20
25
1
25
30
l - Lead Length (mm)
949552
75
100
125
150
175
Fig. 3 - Max. Reverse Current vs. Junction Temperature
500
10
VR = VRRM
450
IF - Forward Current (A)
400
350
RthJA = 45 K/W
300
250
100 K/W
200
160 K/W
150
100
BYV38
50
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
BYV37
0
0.001
25
15774
50
Tj - Junction Temperature (°C)
15775
Fig. 1 - Max. Thermal Resistance vs. Lead Length
PR - Reverse Power Dissipation (mW)
100
50
75
100
125
150
0
175
Tj - Junction Temperature (°C)
Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature
16343
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Rev. 1.8, 21-Feb-18
Document Number: 86045
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYV37, BYV38
www.vishay.com
Vishay Semiconductors
35
VR = VRRM
half sinewave
f = 1 MHz
CD - Diode Capacitance (pF)
IFAV - Average Forward Current (A)
2.5
2.0
RthJA ≤ 45 K/W
I = 10 mm
1.5
1.0
RthJA ≤ 100 K/W
PCB: d = 25 mm
0.5
30
25
20
15
10
5
0
0.1
0
0
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16344
15776
Fig. 5 - Max. Average Forward Current vs. Ambient Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 21-Feb-18
Document Number: 86045
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000