DG9422EDV-T1-GE3

DG9421E, DG9422E www.vishay.com Vishay Siliconix 1.7 , Low On Resistance, +12 V, +5 V, +3 V, ± 5 V, SPST Switches DESCRIPTION FEATURES The DG9421E and DG9422E are monolithic single-pole-single-throw (SPST) analog switches. The DG9421E has a normally closed function. The DG9422E has a normally open function. • 3 V to 16 V single supply or ± 3 thru ± 8 V dual supply operation Available • Low on resistance: 1.7  typical at 12 V Available • 2.4 V logic compatible for control • Bi-directional rail to rail signal switching • Fast switching speed • High bandwidth: 161 MHz • Control logic input can be over V+ • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Processed with high density BiCMOS technology, the parts achieve low resistance, fast switching speed, low power dissipation, high -3dB bandwidth, and low voltage logic control threshold. The DG9421E and DG9422E operate on single and dual supplies. Single supply voltage ranges from +3 V to +16 V while dual supply operation is recommended with ± 3 V to ± 8 V. Each switch conducts equally well in both direction when on, and blocks input voltages up to the supply levels when off. The low and flat on resistance over the full input signal voltage range brings excellent linearity, reduces insertion loss and signal distortion, makes them ideal for data acquisition and programmable gain control applications. These switch characters also make them ideal fit for audio signal switch and reed relay replacement. Operation temperature is specified from -40 °C to +85 °C. The DG9421E and DG9422E are available in 6 lead TSSOP packages. BENEFITS • • • • Wide operation voltage range Low signal errors and distortion Fast switching time Simple interfacing Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS • • • • • • • • • • Automatic test equipment Data acquisition systems Meters and instruments Medical and healthcare systems Communication systems Audio and video signal routing Relay replacement Battery powered systems Computer peripherals Audio and video signal routing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TSOP-6 V+ 1 6 IN COM 2 5 NC V- 4 3 GND Top View Device Marking: DG9421EDV = 4Mxxx TRUTH TABLE LOGIC DG9421E DG9422E 0 On Off 1 Off On Notes • Logic “0”  0.8 V • Logic “1”  2.4 V • Switches shown for logic “0” input TSOP-6 V+ 1 6 IN COM 2 5 NO V- 3 4 GND Top View Device Marking: DG9422EDV = 4Nxxx S18-0592-Rev. A, 25-Jun-2018 ORDERING INFORMATION TEMP. RANGE PACKAGE -40 °C to +85 °C 6-pin TSOP PART NUMBER DG9421EDV-T1-GE3 DG9422EDV-T1-GE3 Document Number: 75411 1 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS PARAMETER V+ reference to VIN V+ reference to GND GND reference to V- LIMIT -0.3 to +18 -0.3 to +18 -0.3 to +18 -0.3 to +18 (V-) - 0.3 V to (V+) + 0.3 V or 50 mA, whichever occurs first 50 100 -65 to +150 570 2000 2000 300 COM, NC, NO a UNIT V - Continuous current (any terminal) mA Peak current, NO, NC or COM (pulsed at 1 ms, 10 % duty cycle) Storage temperature °C 6-pin TSOP c mW Power dissipation (packages) b ESD / HBM JS-001 V ESD / CDM JS-002 Latch up per JEDEC78 mA Notes a. Signals on NO, NC, COM exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 7 mW/°C above 25 °C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS a (Single supply 12 V) PARAMETER Analog Switch Analog signal range a Drain-source on-resistance Switch off leakage current g Channel-on leakage current g Digital Control Input current, VIN low Input current, VIN high Dynamic Characteristics Turn-on time e Turn-off time e Charge injection e Bandwidth e Off-isolation e Source off capacitance e Drain off capacitance e Channel on capacitance e Power Supplies SYMBOL VANALOG RDS(on) VCOM = 1 V / 11 V, VNO/NC = 11 V / 1 V ICOM(off) ICOM(on) VNO/NC = VCOM = 11 V / 1 V IIL IIH VIN under test = 0.8 V VIN under test = 2.4 V tON RL = 300 , CL = 35 pF, VS = 5 V tOFF Q BW OIRR Vg = 0 V, Rg = 0 , CL = 1 nF RL = 50 , CL = 5 pF RL = 50 , CL = 5 pF, f = 1 MHz CNO/NC(off) CCOM(off) CCOM(on) f = 1 MHz I+ Negative supply current I- S18-0592-Rev. A, 25-Jun-2018 V+ = 10.8 V, V- = 0 V, INO/NC = 5 mA, VCOM = 2 V / 9 V INO/NC(off) Positive supply current Ground current TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 V f IGND VIN = 0 V or 12 V LIMITS -40 °C to +85°C TEMP. b UNIT MIN. d TYP. c MAX. d Full Room Full Room Full Room Full Room Full 0 -1 -10 -1 -10 -1 -10 1.7 ± 0.004 ± 1.06 ± 0.004 ± 0.23 ± 0.002 ± 0.454 12 2.7 3.2 1 10 1 10 1 10 Full Full -1 -1 0.001 0.001 1 1 Room Full Room Full Room Room Room Room Room Room - 28 12 19 161 -58 34 36 68 36 41 20 22 - Room Full Room Full Room Full -1 -5 -1 -5 0.001 -0.001 -0.001 - 1 5 - V  nA μA ns pC MHz dB pF μA Document Number: 75411 2 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com SPECIFICATIONS a Vishay Siliconix (Dual supply ± 5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = -5 V, VIN = 2.4 V, 0.8 V f LIMITS -40 °C to +85 °C TEMP. b MIN. d TYP. c UNIT MAX. d Analog Switch Analog signal range e Drain-source on-resistance Switch off leakage current g VANALOG RDS(on) INO/NC(off) ICOM(off) Channel-on leakage current g ICOM(on) V+ = 5 V, V- = 5 V INO/NC = 5 mA, VCOM = ± 3.5 V V+ = 5.5 V, V- = 5.5 V  4.5 V VCOM = ± 4.5 V, VNO/NC =  Full -5 - 5 V Room - 1.9 2.9 Full - - 3.4  Room -1 ± 0.004 1 Full -10 ± 1.012 10 Room -1 ± 0.003 1 Full -10 ± 0.188 10 V+ = 5.5 V, V- = -5.5 V VNO/NC = VCOM = ± 4.5 V Room -1 ± 0.002 1 Full -10 ± 0.425 10 nA Digital Control Input current, VIN low e IIL VIN under test = 0.8 V Full -1 0.001 1 Input current, VIN high e IIH VIN under test = 2.4 V Full -1 0.001 1 Room - 39 54 Full - - 62 Room - 28 33 μA Dynamic Characteristics Turn-on time tON Turn-off time tOFF RL = 300 , CL = 35 pF, VS = ± 3.5 V Charge injection e Bandwidth e Off-isolation e Source off capacitance e ns Full - - 42 Q Vg = 0 V, Rg = 0 , CL = 1 nF Room - 57 - pC BW RL = 50 , CL = 5 pF Room - 179 - MHz OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -58 - dB Room - 34 - Room - 36 - Room - 68 - Room - 0.001 1 Full - - 5 Room -1 -0.001 - Full -5 - - Room -1 -0.001 - Full -5 - - CNO/NC(off) Drain off capacitance e CCOM(off) Channel on capacitance e CCOM(on) f = 1 MHz pF Power Supplies Positive supply current e Negative supply current e Ground current e S18-0592-Rev. A, 25-Jun-2018 I+ IIGND VIN = 0 V or 5 V μA Document Number: 75411 3 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com SPECIFICATIONS a Vishay Siliconix (Single supply 5 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 5 V, V- = 0 V, VIN = 2.4 V, 0.8 V f LIMITS -40 °C to +85 °C TEMP. b UNIT MIN. d TYP. c MAX. d 0 - 5 V Room - 3.04 5.4 Full - - 7  Room - 57 82 Hot - - 95 Room - 24 34 Analog Switch Analog signal range e Drain-source on-resistance VANALOG RDS(on) Full V+ = 4.5 V, INO/NC = 5 mA, VCOM = 1 V, 3.5 V Dynamic Characteristics Turn-on time e tON RL = 300 , CL = 35 pF, VS = 3.5 V Turn-off time e Charge injection e tOFF Q Vg = 0 V, Rg = 0 , CL = 1 nF Hot - - 40 Room - 12 - Room - 0.001 1 Hot - - 5 Room -1 -0.001 - Hot -5 - - Room -1 -0.001 - Hot -5 - - ns pC Power Supplies Positive supply current e Negative supply current e Ground current e S18-0592-Rev. A, 25-Jun-2018 I+ IIGND VIN = 0 V or 5 V μA Document Number: 75411 4 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com SPECIFICATIONS a Vishay Siliconix (Single supply 3 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 3 V, V- = 0 V, VIN = 2.4 V, 0.4 V f LIMITS -40 °C to +85 °C TEMP. b UNIT MIN. d TYP. c MAX. d 0 - 3 V Room - 7.3 11.5 Full - - 18  Room -1 ± 0.003 1 Full -10 ± 0.9 10 Room -1 ± 0.0008 1 Full -10 ± 0.042 10 Analog Switch Analog signal range e Drain-source on-resistance VANALOG RDS(on) Switch off leakage current g INO/NC(off) ICOM(off) Channel-on leakage current g ICOM(on) Full V+ = 2.7 V, V- = 0 V INO/NC = 5 mA, VCOM = 0.5 V, 2.2 V V+ = 3.3 V, V- = 0 V VNO/NC = 1 V, 2 V, VCOM = 2 V, 1 V V+ = 3.3 V, V- = 0 V VCOM = VNO/NC = 1 V, 2 V Room -1 ± 0.0014 1 Full -10 ± 0.41 10 nA Digital Control Input current, VIN low e IIL VIN under test = 0.4 V Full -1 0.001 1 Input current, VIN high e IIH VIN under test = 2.4 V Full -1 0.001 1 Room - 124 215 Full - - 222 Room - 58 101 Full - - 106 μA Dynamic Characteristics Turn-on time tON Turn-off time tOFF RL = 300 , CL = 35 pF, VS = 1.5 V Charge injection e Off-isolation e Source off capacitance e ns Q Vg = 0 V, Rg = 0 , CL = 1 nF Room - 6 - pC OIRR RL = 50 , CL = 5 pF, f = 1 MHz Room - -58 - dB Room - 36 - Room - 38 - Room - 70 - CNO/NC(off) Drain off capacitance e CCOM(off) Channel on capacitance e CCOM(on) f = 1 MHz pF Notes a. Refer to PROCESS OPTION FLOWCHART b. Room = 25 °C, full = as determined by the operating temperature suffix c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet e. Guaranteed by design, not subject to production test f. VIN = input voltage to perform proper function g. Leakage parameters are guaranteed by worst case test conditions and not subject to test S18-0592-Rev. A, 25-Jun-2018 Document Number: 75411 5 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 14 INO/NC = 5 mA V+ = +2.7 V 3 10000 10000 1000 V+ = +3.3 V 8 6 V+ = +5.0 V 4 100 V+ = +12 V V+ = +16 V 2 0 +25 °C 2 1 100 -40 °C V± = ± 5 V INO/NC = 5 mA 0 10 10 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 4 5 6 VCOM - Analog Voltage (V) 2nd line RON vs. VCOM and Single Supply Voltage RDS(on) vs. Analog Voltage and Temperature Axis Title Axis Title INO/NC = 5 mA 10000 10000 5 1.5 100 1 V± = ± 8 V 4 +25 °C 1000 1st line 2nd line 1st line 2nd line 1000 2nd line RDS(ON) - On-Resistance (Ω) +85 °C V± = ± 5 V 2 0.5 3 100 2 -40 °C V+ = +5 V INO/NC = 5 mA 1 10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 4 VCOM - Analog Voltage (V) 2nd line RON vs. VCOM and Dual Supply Voltage RDS(on) vs. Analog Voltage and Temperature Axis Title Axis Title 10000 1000 1st line 2nd line 2 1 100 -40 °C V+ = +12 V INO/NC = 5 mA 0 1 2 3 10 4 5 6 7 8 9 10 11 12 12 -40 °C +25 °C 10 1000 1st line 2nd line +25 °C 2nd line RDS(ON) - On-Resistance (Ω) +85 °C 10000 V+ = +3 V INO/NC = 5 mA 14 0 5 VCOM - Analog Voltage (V) 2nd line 3 2nd line RDS(ON) - On-Resistance (Ω) 3 VCOM - Analog Voltage (V) 2nd line 2.5 2nd line RDS(ON) - On-Resistance (Ω) 1000 1st line 2nd line 10 2nd line RDS(ON) - On-Resistance (Ω) +85 °C V+ = +3.0 V 1st line 2nd line 2nd line RDS(ON) - On-Resistance (Ω) 12 8 6 100 +85 °C 4 2 0 10 0 1 2 3 VCOM - Analog Voltage (V) 2nd line VCOM - Analog Voltage (V) 2nd line RDS(on) vs. Analog Voltage and Temperature RDS(on) vs. Analog Voltage and Temperature S18-0592-Rev. A, 25-Jun-2018 Document Number: 75411 6 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 20 INO/NC(OFF), VCOM = 1 V, VNO/NC = 11 V V+ = +12 V 1000 ICOM(OFF), VCOM = 11 V, VNO/NC = 1 V 100 0 -500 0 20 40 60 80 10 8 100 6 4 V+ = +3 V IN = V+ or GND 10 -40 100 -20 0 ICOM(OFF), VCOM = 4.5 V, VNO/NC = -4.5 V 100 2nd line Loss, OIRR (dB) 1000 1st line 2nd line 2nd line Leakage Current (pA) ICOM(ON), VCOM = 4.5 V 0 ICOM(OFF), VCOM = -4.5 V, VNO/NC = 4.5 V -500 10 -20 0 20 40 60 80 100 Temperature (°C) 2nd line 20 10 Loss 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 V+ = + 12 V -110 100K 1M Axis Title INO/NC(OFF), VCOM = 1 V, VNO/NC = 2 V V+ = 3.3 V 1000 ICOM(OFF), VCOM = 2 V, VNO/NC = 1 V 100 0 ICOM(OFF), VCOM = 1 V, VNO/NC = 2 V -500 10 60 80 Temperature (°C) 2nd line Leakage Current vs. Temperature S18-0592-Rev. A, 25-Jun-2018 100 2nd line Loss, OIRR (dB) ICOM(ON), VCOM = 2 V ICOM(ON), VCOM = 1 V 1st line 2nd line 2nd line Leakage Current (pA) INO/NC(OFF), VCOM = 2 V, VNO/NC = 1 V 40 100 10 10M 100M 1G Axis Title 10000 20 OIRR Insertion Loss, Off-Isolation vs. Frequency 1500 0 1000 Frequency (Hz) Leakage Current vs. Temperature -20 10000 1st line 2nd line V± = ± 5.5 V ICOM(ON), VCOM = -4.5 V -40 100 120 Axis Title INO/NC(OFF), VCOM = 4.5 V, VNO/NC = -4.5 V 500 80 Supply Current vs. Temperature INO/NC(OFF), VCOM = -4.5 V, VNO/NC = +4.5 V 1000 60 Leakage Current vs. Temperature 10000 -40 40 Temperature (°C) 2nd line Axis Title 500 20 Temperature (°C) 2nd line 1500 1000 1000 V+ = +5 V IN = V+ or GND 12 0 10 -20 14 2 ICOM(OFF), VCOM = 1 V, VNO/NC = 11 V -40 V+ = +12 V IN = V+ or GND 16 20 10 Loss 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 V± = ± 5 V -110 100K 1M 10000 1000 1st line 2nd line 500 2nd line I+ - Supply Current (nA) ICOM(ON), VCOM = 11 V ICOM(ON), VCOM = 1 V 1st line 2nd line 2nd line Leakage Current (pA) INO/NC(OFF), VCOM = 11 V, VNO/NC = 1 V 1000 10000 18 1st line 2nd line 10000 1500 OIRR 100 10 10M 100M 1G Frequency (Hz) Insertion Loss, Off-Isolation vs. Frequency Document Number: 75411 7 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 50 10000 10000 V+ = +5 V 2nd line I+ - Supply Current (µA) 1000 100 1000 V+ = +12 V 1st line 2nd line 10 1 V+ = +3 V 0.1 100 0.01 0.001 2nd line tON, tOFF - Switching Time (ns) 10000 V± = ± 5.0 V, tON 40 V+ = +12 V, tON 1000 30 1st line 2nd line 100000 V± = ± 5.0 V, tOFF 20 100 V+ = +12 V, tOFF 10 0.0001 0.00001 10 100 1000 10K 100K 0 10 10M 1M 10 -50 0 50 Input Switching Frequency (Hz) 2nd line Temperature (°C) 2nd line Supply Current vs. Input Switching Frequency Switching Time vs. Temperature Axis Title Axis Title V± = ± 5 V 1000 1 0.1 I- IGND 0.01 100 0.001 0.0001 0.00001 10 1000 100K 2nd line VIN - Switching Threshold (V) I+ 10 1st line 2nd line 10 10M 10000 -40 °C to +85 °C VINL 100 10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Input Switching Frequency (Hz) 2nd line V+ - Supply Voltage (V) 2nd line Supply Current vs. Input Switching Frequency Switching Threshold vs. Supply Voltage Axis Title Axis Title 10000 140 V+ = +3 V, tON 1000 100 1000 V+ = +5 V, tON V+ = +3 V, tOFF 60 100 V+ = +5 V, tOFF 40 20 2nd line I+ - Supply Current (µA) 120 80 10000 10 000 1st line 2nd line 2nd line tON, tOFF - Switching Time (ns) 1000 VINH 100 V+ = 12 V 1000 10 V+ = 5 V 1 1st line 2nd line 2nd line ICC - Supply Current (µA) 1000 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1st line 2nd line 10000 10 000 100 100 0.1 0.01 100 V+ = 3.0 V 0.001 0.0001 0 10 -50 0 50 100 0.00001 0 5.0 10.0 10 15.0 Temperature (°C) 2nd line VIN (V) 2nd line Switching Time vs. Temperature Supply Current vs. Enable Input Voltage S18-0592-Rev. A, 25-Jun-2018 Document Number: 75411 8 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 100.0 V+ = 12 V V± = ± 5 V 60.0 1000 40.0 1st line 2nd line 2nd line QINJ - Charge Injection (pC) 80.0 20.0 0 -20.0 100 V+ = 3 V -40.0 V+ = 5 V -60.0 10 -80.0 -10 -5 0 5 10 15 VNO/NC - Analog Voltage (V) Charge Injection vs. Analog Voltage SCHEMATIC DIAGRAM (typical channel) V+ NC/NO IN IN buffer Level shifter Body snatcher PCH Body snatcher GND COM VIN S18-0592-Rev. A, 25-Jun-2018 Document Number: 75411 9 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG9421E, DG9422E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ V NC/NO Logic input 0V V+ VS S D tOFF VO Switch input (1) IN RL 300  V- GND tr < 5 ns tf < 5 ns 50 % VO CL 35 pF tON VSwitch input (1) CL (includes fixture and stray capacitance) RL 90 % 0V Switch output V O = VS VS 90 % VO - VS Note (1) Logic input waveform is inverted for switches that have the opposite logic sense control R L + rDS(on) Fig. 1 - Switching Time ΔV O V+ VO V+ Rg S INX D IN Vg OFF VO ON OFF CL 10 nF 3V V- GND INX V- OFF ON Q = ΔVO x CL OFF INX dependent on switch configuration Input polarity determined by sense of switch. Fig. 2 - Charge Injection V+ V+ C C V+ S VS VO D S Rg = 50  0 V, 2.4 V V+ RL 50  IN Meter IN GND V- C HP4192A impedance analy zer or equi valent 0 V, 2.4 V D GND VOff isolation = 20 log V- C VS VO V- C = RF Bypass Fig. 3 - Off Isolation Fig. 4 - Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75411. S18-0592-Rev. A, 25-Jun-2018 Document Number: 75411 10 For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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