IRFD9024

IRFD9024 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S • Dynamic dV/dt rating HVMDIP • Repetitive avalanche rated • For automatic insertion G • End stackable S • P-channel G • Fast switching D D • 175 °C operating temperature P-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) DESCRIPTION -60 RDS(on) (Ω) VGS = -10 V Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 0.28 The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. Single ORDERING INFORMATION Package HVMDIP Lead (Pb)-free IRFD9024PbF ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -60 Gate-source voltage VGS ± 20 VGS at -10 V Continuous drain current TA = 25 °C TA = 100 °C Pulsed drain current a ID IDM Linear derating factor UNIT V -1.6 -1.1 A -13 0.0083 W/°C Single pulse avalanche energy b EAS 140 mJ Repetitive avalanche current a IAR -1.6 A Repetitive avalanche energy a EAR 0.13 mJ PD 1.3 W dV/dt -4.5 V/ns TJ, Tstg -55 to + 175 TA = 25 °C Maximum power dissipation Peak diode recovery dv/dt c Operating junction and storage temperature range Soldering rRecommendations (peak temperature) d For 10 s 300d °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 Ω, IAS = -3.2 A (see fig. 12) c. ISD ≤ -11 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0887-Rev. D, 30-Aug-2021 Document Number: 91137 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SYMBOL TYP. MAX. UNIT RthJA - 120 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = -250 μA -60 - - V ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.056 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V nA VGS = ± 20 V - - ± 100 VDS = -60 V, VGS = 0 V - - -100 VDS = -48 V, VGS = 0 V, TJ = 150 °C - - -500 - - 0.28 Ω 1.3 - - S - 570 - - 360 - - 65 - - - 19 - - 5.4 IGSS IDSS RDS(on) gfs ID = -0.96 Ab VGS = -10 V VDS = -25 V, ID = -0.96 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 11 Turn-On Delay Time td(on) - 13 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 0 V VDS = -25 V f = 1.0 MHz, see fig. 5 VGS = -10 V ID = -11 A, VDS = -48 V see fig. 6 and 13b VDD = -30 V, ID = -11 A Rg = 18 Ω, RD = 2.5 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D - 68 - - 15 - - 29 - - 4.0 - - 6.0 - - - -1.6 - - -13 - - -6.3 pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = -1.6 A, VGS = 0 Vb TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μsb V - 100 200 ns - 0.32 0.64 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0887-Rev. D, 30-Aug-2021 Document Number: 91137 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TA = 25 °C Fig. 1 - Typical Output Characteristics, TA = 25 °C Fig. 2 - Typical Transfer Characteristics TA = 175 °C Fig. 1 - Typical Output Characteristics, TA = 175 °C S21-0887-Rev. D, 30-Aug-2021 Fig. 3 - Normalized On-Resistance vs. Temperature Document Number: 91137 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage Vishay Siliconix Fig. 6 - Typical Source-Drain Diode Forward Voltage TA = 25 °C TJ = 150 °C SINGLE PULSE Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage S21-0887-Rev. D, 30-Aug-2021 Fig. 7 - Maximum Safe Operating Area Document Number: 91137 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. ID, Drain Current (A) Rg +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % TA, Ambient Temperature (°C) 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJA) Fig. 8 - Maximum Drain Current vs. Ambient Temperature t1, Rectangular Pulse Duration (s) Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient S21-0887-Rev. D, 30-Aug-2021 Document Number: 91137 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T Rg + V DD VDD IAS tp - 10 V 0.01 W tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S21-0887-Rev. D, 30-Aug-2021 Fig. 13b - Gate Charge Test Circuit Document Number: 91137 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFD9024 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 10 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91137. S21-0887-Rev. D, 30-Aug-2021 Document Number: 91137 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.035 [0.89] 0.197 [5.00] 0.189 [4.80] 0.133 [3.37] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] 0.086 [2.18] A L 0.160 [4.06] 0.140 [3.56] 0° to 15° 2x 0.017 [0.43] 0.013 [0.33] 0.045 [1.14] 2 x 0.035 [0.89] E min. 0.024 [0.60] 4x 0.020 [0.51] 0.100 [2.54] typ. E max. INCHES MILLIMETERS DIM. MIN. MAX. MIN. A 0.310 0.330 7.87 MAX. 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.290 6.86 7.36 ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 Revision: 06-Sep-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000