LS4151-GS18

LS4151 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4151 • QuadroMELF package • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Extreme fast switches ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box PARTS TABLE PART LS4151 ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS LS4151-GS18 or LS4151GS08 - Single Tape and reel SYMBOL VALUE UNIT VRRM 75 V VR 50 V IFSM 2 A IFRM 500 mA IF 300 mA IF(AV) 150 mA Ptot 500 mW ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 μs Repetitive peak forward current Forward continuous current Average forward current VR = 0 Power dissipation THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 500 K/W Tj 175 °C Tstg -65 to +175 °C Rev. 1.9, 25-Feb-2020 Document Number: 85563 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LS4151 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TYP. MAX. 0.880 1 V IR 50 nA VR = 50 V, Tj = 150 °C IR 50 μA Breakdown voltage IR = 5 μA, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 2 pF IF = IR = 10 mA, iR = 1 mA trr 4 ns IF = 10 mA, VR = 6 V, iR = 0.1 x IR, RL = 100 Ω trr 2 ns Forward voltage Reverse voltage Reverse recovery time TEST CONDITION SYMBOL IF = 50 mA VF VR = 50 V MIN. UNIT 75 V TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 3.0 Scattering Limit C D - Diode Capacitance (pF) I R - Reverse Current (µA) 100 10 1 0.1 2.5 2.0 1.5 1.0 0.5 V R = 50 V 0.01 0 40 80 120 160 0 200 Tj - Junction Temperature (°C) 94 9151 f = 1 MHz Tj = 25 °C 0.1 94 9153 Fig. 1 - Reverse Current vs. Junction Temperature 1 10 100 V R - Reverse Voltage (V) Fig. 3 - Diode Capacitance vs. Reverse Voltage I F - Forward Current (mA) 1000 Tj = 100 °C 100 10 Tj = 25 °C 1 0.1 0 94 9152 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 25-Feb-2020 Document Number: 85563 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LS4151 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF (SOD-80) 1.6 (0.063) 1.4 (0.055) 1. 7 (0 .0 gl as 67) s Cathode identification > R3 (R0.118) glass 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 2 (0.079) min. 1.25 (0.049) min. 5 (0.197) ref. 96 12071 Rev. 1.9, 25-Feb-2020 Document Number: 85563 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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