Si1557DH
Vishay Siliconix
N- and P-Channel 1.8 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
12
- 12
RDS(on) (Ω)
ID (A)
0.235 at VGS = 4.5 V
1.3
0.280 at VGS = 2.5 V
1.2
0.340 at VGS = 1.8 V
1.0
0.535 at VGS = - 4.5 V
- 0.86
0.880 at VGS = - 2.5 V
- 0.67
1.26 at VGS = - 1.8 V
- 0.56
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Thermally Enhanced SC-70 Package
• Fast Switching to Minimize Gate and Switching
Losses
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Baseband dc-to-dc Converter Switch for Portable
Electronics
SOT-363
SC-70 (6-LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
EC
XX
YY
Marking Code
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1557DH-T1-E3 (Lead (Pb)-free)
Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
N-Channel
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
PD
P-Channel
Steady State
5s
Steady State
12
- 12
1.3
0.9
1.2
- 0.86
0.8
- 0.62
3
- 0.77
- 0.55
-2
0.5
0.39
- 0.5
- 0.39
0.6
0.47
0.6
0.47
0.3
0.25
0.3
0.25
TJ, Tstg
Unit
V
±8
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
5s
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
170
210
220
265
105
125
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71944
S10-1054-Rev. C, 03-May-10
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Si1557DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
N-Ch
0.45
1
P-Ch
- 0.45
1
VDS = 0 V, VGS = ± 8 V
IGSS
IDSS
VDS = VGS, ID = 100 µA
VDS = VGS, ID = - 100 µA
N-Ch
± 100
P-Ch
± 100
VDS = 9.6 V, VGS = 0 V
N-Ch
1
VDS = - 9.6 V, VGS = 0 V
P-Ch
-1
VDS = 9.6 V, VGS = 0 V, TJ = 85 °C
N-Ch
5
VDS = - 9.6 V, VGS = 0 V, TJ = 85 °C
P-Ch
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
3
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
-2
ID(on)
RDS(on)
gfs
VSD
V
nA
µA
-5
A
VGS = 4.5 V, ID = 1.2 A
N-Ch
0.195
0.235
VGS = - 4.5 V, ID = - 0.77 A
P-Ch
0.445
0.535
VGS = 2.5 V, ID = 1.0 A
N-Ch
0.230
0.280
VGS = - 2.5 V, ID = - 0.6 A
P-Ch
0.735
0.880
VGS = 1.8 V, ID = 0.2 A
N-Ch
0.284
0.340
VGS = - 1.8 V, ID = - 0.2 A
P-Ch
1.05
1.26
VDS = 5 V, ID = 1.2 A
N-Ch
0.8
VDS = - 5 V, ID = - 0.77 A
P-Ch
1.2
IS = 0.39 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 0.39 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
N-Channel
VDS = 6 V, VGS = 4.5 V, ID = 1.2 A
P-Channel
VDS = - 6 V, VGS = - 4.5 V, ID = - 0.1 A
N-Channel
VDD = 6 V, RL = 12 Ω
ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω
P-Channel
VDD = - 6 V, RL = 12 Ω
ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω
N-Ch
0.8
1.2
P-Ch
1.1
1.8
N-Ch
0.15
P-Ch
0.3
N-Ch
0.20
P-Ch
0.25
nC
N-Ch
15
25
P-Ch
17
25
N-Ch
25
40
P-Ch
30
45
N-Ch
25
40
P-Ch
15
25
N-Ch
10
15
P-Ch
10
15
IF = 0.39 A, dI/dt = 100 A/µs
N-Ch
20
40
IF = - 0.39 A, dI/dt = 100 A/µs
P-Ch
25
40
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 71944
S10-1054-Rev. C, 03-May-10
Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
4
TC = - 55 °C
VGS = 5 V thru 2.5 V
2V
3
ID - Drain Current (A)
I D - Drain Current (A)
3
2
1.5 V
25 °C
125 °C
2
1
1
1V
0
0.0
0
0
1
2
3
4
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.6
100
0.5
80
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
0.4
VGS = 1.8 V
0.3
VGS = 2.5 V
0.2
VGS = 4.5 V
0.1
Ciss
60
40
Coss
20
Crss
0.0
0
0
1
2
3
4
0
3
ID - Drain Current (A)
12
Capacitance
1.6
5
VGS = 4.5 V
ID = 1.2 A
VDS = 6 V
ID = 1.2 A
1.4
3
2
(Normalized)
4
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
9
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.2
1.0
0.8
1
0
0.0
6
0.2
0.4
0.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 71944
S10-1054-Rev. C, 03-May-10
0.8
1.0
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
4
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.5
TJ = 150 °C
1
TJ = 25 °C
0.4
ID = 1.2 A
0.3
ID = 0.2 A
0.2
0.1
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.2
5
0.1
4
0.0
Power (W)
VGS(th) Variance (V)
ID = 100 µA
- 0.1
3
2
- 0.2
1
- 0.3
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (s)
Threshold Voltage
Single Pulse Power
10
I D - Drain Current (A)
Limited
by RDS(on)*
IDM Limited
1
1 ms
ID Limited
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
1 s, 10 s, DC
BVDSS
Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 71944
S10-1054-Rev. C, 03-May-10
Si1557DH
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 220 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 71944
S10-1054-Rev. C, 03-May-10
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Si1557DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
3.0
VGS = 5 V
thru 3.5 V
2.0
2.5 V
1.5
1.0
2V
0.5
1.5 V
TC = - 55 °C
2.5
3V
25 °C
I D - Drain Current (A)
I D - Drain Current (A)
2.5
125 °C
2.0
1.5
1.0
0.5
0.0
0.0
0
1
2
3
4
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
160
2.0
1.6
120
VGS = 2.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 1.8 V
1.2
0.8
VGS = 4.5 V
Ciss
80
Coss
40
0.4
Crss
0.0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
3
1.6
VGS = 4.5 V
ID = 0.8 A
VDS = 6 V
ID = 0.8 A
1.4
3
2
(Normalized)
4
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
12
Capacitance
5
1.2
1.0
0.8
1
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6
9
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
0
0.0
6
0.3
0.6
0.9
1.2
1.5
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
Document Number: 71944
S10-1054-Rev. C, 03-May-10
Si1557DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
3
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
2.5
TJ = 150 °C
1
TJ = 25 °C
2.0
ID = 0.8 A
1.5
ID = 0.2 A
1.0
0.5
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
3
4
5
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.3
5
0.2
4
ID = 100 µA
0.1
Power (W)
VGS(th) Variance (V)
2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.0
- 0.1
- 0.2
- 50
3
2
1
- 25
0
25
50
75
100
125
0
10-3
150
10-2
TJ - Temperature (°C)
10-1
1
10
100
600
Time (s)
Single Pulse Power
Threshold Voltage
10
I D - Drain Current (A)
Limited
by RDS(on)*
IDM Limited
1
1 ms
ID Limited
0.1
10 ms
100 ms
TA = 25 °C
Single Pulse
1 s, 10 s, DC
BVDSS
Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 71944
S10-1054-Rev. C, 03-May-10
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Si1557DH
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 220 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71944.
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Document Number: 71944
S10-1054-Rev. C, 03-May-10
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Revision: 01-Jan-2022
1
Document Number: 91000