SI9987DY-E3

Product is End of Life 12/2014 Si9987 Vishay Siliconix Buffered H-Bridge Driver with Integrate MOSFET DESCRIPTION FEATURES The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 5 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. • • • • • • The Si9987 is available in an 8-pin SOIC package, specified to operate over a voltage range of 3.8 V to 13.2 V, and the commercial temperature range of 0 °C to 70 °C (C suffix) and - 40 °C to 85 °C (D suffix). The Si9987 is available in lead free. APPLICATIONS • • • • • • • 1 A H-bridge 500 kHz switching rate Shoot-through limited TTL compatible inputs 3.8 V to 13.2 V operating range Surface mount packaging1 A H-bridge VCM driver Brushed motor driver Stepper motor driver Power converter Optical disk drives Power supplies High performance servo FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE VDD SO-8 SA 1 GND 2 VDD SB 8 OUTA 7 INA 3 6 INB 4 5 OUTB Si9987 (3) (7) INA Top View Shoot-Through Protection Logic (6) TRUTH TABLE INB INA INB OUTA OUTB 1 0 1 0 0 1 0 1 0 0 0 0 1 1 HiZ HiZ (2) GND (1) (8) SA (5) OUTPUT A B (4) SB ORDERING INFORMATION Part Number Temperature Range Si9987CY-T1 0 °C to 70 °C Si9987DY-T1 - 40 °C to 85 °C Si9987CY-T1-E3 0 °C to 70 °C Si9987DY-T1-E3 - 40 °C to 85 °C Si9987CY 0 °C to 70 °C Si9987DY - 40 °C to 85 °C Document Number: 70864 S11-0800-Rev. E, 25-Apr-11 Package Tape and reel Lead free Tape and reel Bulk (tubes) www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si9987 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Parameter Voltage on any Pin with Respect to Ground Voltage on Pins 5, 8 with Respect to Ground Voltage on Pins 1, 4 Maximum VDD Peak Output Current Storage Temperature Maximum Junction Temperature (TJ) Power Dissipationb θJA TA = 25 °C TA = 70 °C TA = 85 °C Si9987CY Si9987DY Continuous IOUT Current (TJ = 135 °C)c Operating Temperature Range Limit - 0.3 V to VDD + 0.3 V - 1 V to VDD + 1 V - 0.3 V to GND + 1 V 15 1.5 - 65 to 150 150 1 100 ± 1.02 ± 0.75 ± 0.65 0 to 70 - 45 to 85 Unit V V A °C W °C/W A °C Notes: a. Device mounted with all leads soldered or welded to PC board. b. Derate 10 mW/°C above 25 °C. c. TJ = TA + (PD x θJA), PD = power dissipation. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter VDD Maximum Junction Temperature (TJ) Limit 3.8 to 13.2 135 Unit V °C SPECIFICATIONS Parameter Input Input Voltage High Input Voltage Low Input Current with Input Voltage High Input Current with Input Voltage Low Output Symbol VINH VINL IINH IINL Test Conditions Unless Specified VDD = 3.8 V to 13.2 V SA at GND, SB at GND VOUTH Output Voltage Lowc VOUTL Output Leakage Current Low Output Leakage Current High Output V Clamp High Output V Clamp Low Supply IOLL IOLH VCLH VCLL VDD Supply Current Min Typb Maxa 2 VIN = 2 V VIN = 0 V VDD = 10.8 V VDD = 4.5 V VDD = 10.8 V IOUT = - 500 mA VDD = 4.5 V IOUT = - 300 mA, VDD = 3.8 V VDD = 10.8 V IOUT = 1 mA VDD = 4.5 V VDD = 10.8 V IOUT = 500 mA VDD = 4.5 V IOUT = 300 mA, VDD = 3.8 V INA = INB ≥ 2 V, VOUT = VDD = 13.2 V VOUT = 0, VDD = 13.2 V IOUT = 100 mA INA = INB ≥ 2 V IOUT = - 100 mA IOUT = - 1 mA Output Voltage Highc Limits a 1 1 -1 10.40 4.00 10.60 4.25 3.63 - 10 - 0.9 10.56 4.20 10.68 4.35 3.70 0.24 0.40 0.30 0.50 0.12 0.20 0.15 0.25 0.10 0.17 0 10 0 VDD + 0.7 VDD + 0.9 - 0.7 IDD IN = 100 kHz, VDD = 5.5 V INA = INB = 4.5 V, VDD = 5.5 V 1.8 75 TPLH TPHL VDD = 5 V 300 100 2.5 125 Unit V µA V µA V mA µA Dynamic Propagation Delay Time nS Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Maximum value measured at TJ = 135 °C. Typical value measured at TJ = TA = 25 °C (pulse width ≤ 300 µsec, duty cycle ≤ 2 %). www.vishay.com 2 Document Number: 70864 S11-0800-Rev. E, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless otherwise noted) 12 500 VDD = 10.8 V 400 4.5 V VOUTL (mV) VOUTH (V) 9 6 4.5 V 3 VDD = 3.8 V 300 10.8 V 200 3.8 V 100 0 0.50 0.75 1.00 1.25 0 0.50 1.50 0.75 Output Current (A) 1.00 1.25 1.50 Output Current (A) Output High Voltage vs. Output Current Output Low Voltage vs. Output Current 200 6 f = 100 kHz 5 4 I DD (mA) I DD - Standby ( µ A) 160 120 3 2 80 1 40 0 4 6 8 10 12 14 4 6 8 10 12 14 VDD - Supply Voltage (V) VDD - Supply Voltage (V) Supply Current vs. Supply Voltage Supply Current vs. Supply Voltage 8 200 f = 100 kHz VDD = 13.2 V 180 VDD = 13.2 V 6 I DD (mA) I DD - Standby (µ A) 160 140 120 4 5.5 V 100 2 5.5 V 80 60 - 35 - 20 -5 10 25 40 55 Temperature (°C) Supply Current vs. Temperature Document Number: 70864 S11-0800-Rev. E, 25-Apr-11 70 85 0 - 35 - 20 -5 10 25 40 55 70 85 Temperature (°C) Supply Current vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C unless otherwise noted) 600 15 12 400 VDD = 13.2 V I DD (mA) Delay Time (ns) 500 300 TPLH 200 6 5.5 V 3 TPHL 100 9 3.8 V 0 0 3 6 9 12 15 0 50 100 150 Supply Current vs. Frequency Propagation Time vs. Supply Voltage 0.50 35 0.46 f = 500 kHz 0.42 28 TA = 135 °C 0.38 21 R OUT (Ω) I DD (mA) 200 f - Frequency (kHz) VDD - Supply Voltage (V) 14 0.34 85 °C 0.30 25 °C 0.26 0.22 - 40 °C 0.18 7 0.14 0.10 0 4 6 8 10 12 2 14 4 6 8 10 12 14 VDD VDD - Supply Voltage (v) ROUT vs. VDD Supply Current vs. Supply Voltage 1.5 0.5 1.4 VDD = 3.8 V VDD = 10.8 V 0.4 4.5 V R OUT (Ω) 10.8 V 5.5 V 0.3 13.2 V 0.2 R OUT Normalized (Ω) 1.3 1.2 VDD = 4.5 V 1.1 1.0 0.9 0.8 0.7 0.1 - 50 0 50 100 Temperature (° C) ROUT vs. Junction Temperature (TJ) 150 0.6 - 50 - 25 0 25 50 75 100 125 150 Temperature (° C) ROUT Normalized vs. Junction Temperature (TJ) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70864. www.vishay.com 4 Document Number: 70864 S11-0800-Rev. E, 25-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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