SIA429DJT-T1-GE3

SiA429DJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES Thin PowerPAK® SC-70-6L Single S 4 • TrenchFET® power MOSFET D 6 D 5 0.6 mm 05 2. S 7 m m 1 5 2.0 3 G mm Top View 2 D 1 D Bottom View Marking code: BP • New thermally enhanced PowerPAK® SC-70 package - Small footprint area - Ultra-thin 0.6 mm height - Low on-resistance • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V -20 0.0205 0.0270 RDS(on) max. () at VGS = -1.8 V 0.0360 RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a Configuration 0.0600 24.5 -12 Single S • Load switch and charger switch for portable devices • DC/DC converter G P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Thin PowerPAK SC-70 SiA429DJT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 300 μs) Continuous source-drain diode current Maximum power dissipation ID IDM TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e IS PD TJ, Tstg LIMIT -20 ±8 -12 a -12 a -10.6 b, c -8.5 b, c -30 -12 a -2.9 b, c 19 12 3.5 b, c 2.2 b, c -55 to +150 260 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b, f Maximum junction-to-case (drain) t5s Steady state SYMBOL RthJA RthJC TYPICAL 28 5.3 MAXIMUM 36 6.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 80 °C/W S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA429DJT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - - V -12 - - 2.7 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA Gate-source threshold voltage mV/°C VGS(th) VDS = VGS, ID = -250 μA -0.4 - -1 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = -20 V, VGS = 0 V - - -1 VDS = -20 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V, VGS = -4.5 V -20 - - VGS = -4.5 V, ID = -6 A - 0.0170 0.0205 VGS = -2.5 V, ID = -2 A - 0.0220 0.0270 VGS = -1.8 V, ID = -2 A - 0.0290 0.0360 VGS = -1.5 V, ID = -1 A - 0.0380 0.0600 VDS = -10 V, ID = -6 A - 30 - μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time - 1750 - VDS = -10 V, VGS = 0 V, f = 1 MHz - 270 - - 240 - VDS = -10 V, VGS = -8 V, ID = -10 A - 41 62 - 24.5 37 VDS = -10 V, VGS = -4.5 V, ID = -10 A - 2.4 - - 6.7 - f = 1 MHz 1.3 6.3 13 - 22 35 - 25 40 td(on) tr td(off) VDD = -10 V, RL = 1.2  ID  -8.5 A, VGEN = -4.5 V, Rg = 1  - 70 105 tf - 25 40 td(on) - 10 15 tr td(off) VDD = -10 V, RL = 1.2  ID  -8.5 A, VGEN = -8 V, Rg = 1  tf pF nC  ns 10 15 - 80 120 - 25 40 - - -12 - - -30 - -0.8 -1.2 V - 35 60 ns - 18 30 nC - 13 - - 22 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = -8.5 A, VGS = 0 V IF = -8.5 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2% b. Guaranteed by design, not subject to production testing  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA429DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 30 V GS = 5 V thru 2 V 16 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 V GS = 1.5 V 10 12 8 T C = 25 °C 4 5 T C = 125 °C T C = - 55 °C V GS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 3500 0.08 V GS = 1.5 V 3000 V GS = 1.8 V 0.06 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.07 0.05 0.04 0.03 V GS = 2.5 V 0.02 Ciss 1500 1000 500 Crss 0 0 0 5 10 15 20 25 0 30 5 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 20 1.65 ID = 10 A V DS = 5 V 1.45 V DS = 10 V V DS = 16 V 4 2 V GS = 4.5 V; 2.5 V; I D = 6 A (Normalized) 6 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 2000 Coss V GS = 4.5 V 0.01 2500 1.25 V GS = 1.8 V; I D = 6 A 1.05 V GS = 1.5 V; I D = 1 A 0.85 0 0 10 20 30 40 50 0.65 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA429DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.06 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 100 T J = 150 °C 10 T J = 25 °C 1 0.05 ID = 1 A; T J = 125 °C 0.04 ID = 6 A; T J = 125 °C 0.03 ID = 6 A; T J = 25 °C 0.02 0.1 0.0 0.01 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 0.7 25 0.6 20 ID = 250 μA Power (W) VGS(th) (V) 1 VSD - Source-to-Drain Voltage (V) 0.8 0.5 15 0.4 10 0.3 5 0.2 - 50 ID = 1 A; T J = 25 °C - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) * ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA429DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 30 Power Dissipation (W) ID - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA429DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67038. S11-0649-Rev. B, 11-Apr-11 Document Number: 67038 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single A PIN5 K2 A1 K3 Backside View of Dual Z Detail Z Z Side View SINGLE PAD DIM. MIN. 0.525 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.275 0.375 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L 0.175 T ECN: C12-0160-Rev. B, 05-Mar-12 DWG: 5994 INCHES MIN. NOM. 0.0206 0.024 0 0.009 0.012 0.006 0.008 0.078 0.081 0.033 0.037 0.005 0.009 0.078 0.081 0.055 0.059 0.014 0.016 0.017 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.007 0.011 DUAL PAD MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Revision: 05-Mar-12 1 Document Number: 65370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix 0.045 (1.143) (0.648) 0.022 (0.559) 0.026 0.025 (0.622) (2.438) 0.096 RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72601 Revision: 21-Jan-08 www.vishay.com 17 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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