SIA430DJT-T1-GE3

SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) b, c 0.0135 at VGS = 10 V 12 a 0.0185 at VGS = 4.5 V 10.8 • TrenchFET® power MOSFET Qg (Typ.) • Thermally enhanced PowerPAK® SC-70 package - Small footprint area - Ultra-thin 0.6 mm height 5.3 nC • 100 % Rg tested Thin PowerPAK® SC-70-6L Single S 4 • Material categorization: for definitions of compliance www.vishay.com/doc?99912 D 6 D 5 please APPLICATIONS 0.6 mm 05 2. S 7 m m 1 3 G m 5m 2.0 Top View 2 D see D • Load switch 1 D • DC/DC conversion G Bottom View Marking Code: AY Ordering Information: SiA430DJT-T1-GE3 (Lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 TC = 70 °C 12 a ID TA = 25 °C 12 a, b, c 10.1 b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) IDM TC = 25 °C Continuous Source-Drain Diode Current 12 a 2.9 b, c TC = 25 °C 19.2 TC = 70 °C 12.3 PD TA = 25 °C W 3.5 b, c 2.2 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 40 IS TA = 25 °C Maximum Power Dissipation V 12 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) d, e °C 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM Maximum Junction-to-Ambient b, f t≤5s RthJA 28 36 Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 UNIT °C/W Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S14-2236-Rev. A, 10-Nov-14 Document Number: 62991 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA430DJT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 24 - - -5.6 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA mV/°C VGS(th) VDS = VGS , ID = 250 μA 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a RDS(on) gfs VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 20 - - VGS = 10 V, ID = 7 A - 0.0108 0.0135 VGS = 4.5 V, ID = 5 A - 0.0146 0.0185 VDS = 10 V, ID = 7 A - 16 - - 800 - VDS = 10 V, VGS = 0 V, f = 1 MHz - 200 - - 90 - VDS = 10 V, VGS = 10 V, ID = 12 A - 12 18 - 5.3 9 VDS = 10 V, VGS = 4.5 V, ID = 12 A - 2 - - 1.4 - f = 1 MHz 0.5 2.5 5 - 16 25 μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω - 10 15 - 15 25 tf - 10 15 td(on) - 10 15 - 8 15 - 17 30 - 8 15 - - 12 - - 40 - 0.8 1.2 td(off) tr td(off) VDD = 10 V, RL = 1 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD TC = 25 °C IS = 5 A, VGS = 0 V A V Body Diode Reverse Recovery Time trr - 18 30 ns Body Diode Reverse Recovery Charge Qrr - 7 15 nC Reverse Recovery Fall Time ta - 8 - Reverse Recovery Rise Time tb - 10 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2236-Rev. A, 10-Nov-14 Document Number: 62991 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA430DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 40 5 VGS = 10 V thru 5 V VGS = 4 V TC = - 55 °C 4 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 VGS = 3 V 8 3 TC = 125 °C 2 1 TC = 25 °C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1000 0.025 800 0.020 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.015 VGS = 10 V 600 400 Coss 0.010 200 Crss 0 0.005 0 8 16 24 32 0 40 10 15 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 10 RDS(on) - On-Resistance (Normalized) ID = 12 A VGS - Gate-to-Source Voltage (V) 5 I D - Drain Current (A) VDS = 10 V 8 VDS = 5 V 6 VDS = 15 V 4 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge S14-2236-Rev. A, 10-Nov-14 12 ID = 7 A VGS = 10 V 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 62991 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA430DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 100 0.055 10 0.045 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A TJ = 25 °C TJ = 150 °C 1 0.1 0.01 0.001 0.0 TJ = - 50 °C 0.035 0.025 TJ = 125 °C 0.015 TJ = 25 °C 0.005 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4 5 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.3 30 25 0.1 20 - 0.1 Power (W) VGS(th) Variance (V) 3 VGS - Gate-to-Source Voltage (V) ID = 1 mA - 0.3 15 10 ID = 250 µA - 0.5 5 - 0.7 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) Threshold Voltage 0.1 1 Time (s) 10 100 1000 Single Pulse Power (Junction-to-Ambient) 100 10 µs Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-2236-Rev. A, 10-Nov-14 Document Number: 62991 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA430DJT www.vishay.com Vishay Siliconix 35 25 28 20 Power (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 21 Package Limited 14 15 10 5 7 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 0 25 50 75 100 125 150 TJ - Temperature (°C) Power Derating * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-2236-Rev. A, 10-Nov-14 Document Number: 62991 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA430DJT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62991. S14-2236-Rev. A, 10-Nov-14 Document Number: 62991 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single A PIN5 K2 A1 K3 Backside View of Dual Z Detail Z Z Side View SINGLE PAD DIM. MIN. 0.525 0 0.23 0.15 1.98 0.85 0.135 1.98 1.40 0.345 0.425 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.95 1.05 0.235 0.335 2.05 2.15 1.50 1.60 0.395 0.445 0.475 0.525 0.65 BSC 0.275 TYP. 0.400 TYP. 0.240 TYP. 0.225 TYP. 0.355 TYP. 0.275 0.375 A A1 b C D D2 D3 E E2 E3 E4 e K K1 K2 K3 K4 L 0.175 T ECN: C12-0160-Rev. B, 05-Mar-12 DWG: 5994 INCHES MIN. NOM. 0.0206 0.024 0 0.009 0.012 0.006 0.008 0.078 0.081 0.033 0.037 0.005 0.009 0.078 0.081 0.055 0.059 0.014 0.016 0.017 0.019 0.026 BSC 0.011 TYP. 0.016 TYP. 0.009 TYP. 0.009 TYP. 0.014 TYP. 0.007 0.011 DUAL PAD MAX. 0.026 0.002 0.015 0.010 0.085 0.041 0.013 0.085 0.063 0.018 0.021 MIN. 0.525 0 0.23 0.15 1.98 0.513 1.98 0.85 MILLIMETERS NOM. MAX. 0.60 0.65 0.05 0.30 0.38 0.20 0.25 2.05 2.15 0.613 0.713 2.05 0.95 2.15 1.05 MIN. 0.0206 0 0.009 0.006 0.078 0.020 INCHES NOM. 0.024 0.012 0.008 0.081 0.024 MAX. 0.026 0.002 0.015 0.010 0.085 0.028 0.078 0.033 0.081 0.037 0.085 0.041 0.65 BSC 0.275 TYP. 0.320 TYP. 0.252 TYP. 0.015 0.175 0.05 0.275 0.10 0.026 BSC 0.011 TYP. 0.013 TYP. 0.010 TYP. 0.375 0.15 0.007 0.002 0.011 0.004 0.015 0.006 Notes 1. All dimensions are in millimeter. Millimeters will govern. 2. Package outline exculsive of mold flash and metal burr. 3. Package outline inclusive of plating Revision: 05-Mar-12 1 Document Number: 65370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix 0.045 (1.143) (0.648) 0.022 (0.559) 0.026 0.025 (0.622) (2.438) 0.096 RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72601 Revision: 21-Jan-08 www.vishay.com 17 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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