SMAJ10-E3/61

SMAJ5.0 thru SMAJ188CA Vishay General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 78 V) • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AC (SMA) PRIMARY CHARACTERISTICS VWM 5.0 V to 188 V PPPM 400 W, 300 W IFSM 40 A TJ max. 150 °C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use C or CA suffix (e.g. SMAJ10C, SMAJ10CA). Electrical characteristics apply in both directions. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) Peak pulse current with a waveform (1) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 400 W IPPM See next table A IFSM 40 A TJ, TSTG - 55 to + 150 °C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 78 V (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal Document Number: 88390 Revision: 29-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SMAJ5.0 thru SMAJ188CA Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SMAJ5.0 SMAJ5.0A(5) SMAJ6.0 SMAJ6.0A SMAJ6.5 SMAJ6.5A SMAJ7.0 SMAJ7.0A SMAJ7.5 SMAJ7.5A SMAJ8.0 SMAJ8.0A SMAJ8.5 SMAJ8.5A SMAJ9.0 SMAJ9.0A SMAJ10 SMAJ10A SMAJ11 SMAJ11A SMAJ12 SMAJ12A SMAJ13 SMAJ13A SMAJ14 SMAJ14A SMAJ15 SMAJ15A SMAJ16 SMAJ16A SMAJ17 SMAJ17A SMAJ18 SMAJ18A SMAJ20 SMAJ20A SMAJ22 SMAJ22A SMAJ24 SMAJ24A SMAJ26 SMAJ26A SMAJ28 SMAJ28A SMAJ30 SMAJ30A SMAJ33 SMAJ33A SMAJ36 SMAJ36A SMAJ40 www.vishay.com 2 DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. AD AE AF AG AH AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BD BE BF BG BH BK BL BM BN BP BQ BR BS BT BU BV BW BX BY BZ CD CE CF CG CH CK CL CM CN CP CQ WD WE WF WG WH WK WL WM WN WP WQ WR WS WT WU WV WW WX WY WZ XD XE XF XG XH XK XL XM XN XP XQ XR XS XT XU XV XW XX XY XZ YD YE YF YG YH YK YL YM YN YP YQ 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 7.82 7.07 8.15 7.37 8.82 7.98 9.51 8.60 10.2 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 10 10 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 28 28 30 30 33 33 36 36 40 MAXIMUM REVERSE LEAKAGE AT VWM MAXIMUM PEAK PULSE SURGE CURRENT ID (µA) (3) IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 41.7 43.5 35.1 38.8 32.5 35.7 30.1 33.3 28.0 31.0 26.7 29.4 25.2 27.8 23.7 26.0 21.3 23.5 19.9 22.0 18.2 20.1 16.8 18.6 15.5 17.2 14.9 16.4 13.9 15.4 13.1 14.5 12.4 13.7 11.2 12.3 10.2 11.3 9.3 10.3 8.6 9.5 8.0 8.8 7.5 8.3 6.8 7.5 6.2 6.9 5.6 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88390 Revision: 29-Oct-08 SMAJ5.0 thru SMAJ188CA Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE SMAJ40A SMAJ43 SMAJ43A SMAJ45 SMAJ45A SMAJ48 SMAJ48A SMAJ51 SMAJ51A SMAJ54 SMAJ54A SMAJ58 SMAJ58A SMAJ60 SMAJ60A SMAJ64 SMAJ64A SMAJ70 SMAJ70A SMAJ75 SMAJ75A SMAJ78 SMAJ78A SMAJ85 SMAJ85A SMAJ90 SMAJ90A SMAJ100 SMAJ100A SMAJ110 SMAJ110A SMAJ120 SMAJ120A SMAJ130 SMAJ130A SMAJ150 SMAJ150A SMAJ160 SMAJ160A SMAJ170 SMAJ170A SMAJ188 SMAJ188A DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) UNI BI MIN. MAX. CR CS CT CU CV CW CX CY CZ RD RE RF RG RH RK RL RM RN RP RQ RR RS RT RU RV RW RX RY RZ VD SE SF VG SH VK SL VM SN SP SQ SR ST SS YR YS YT YU YV YW YX YY YZ ZD ZE ZF ZG ZH ZK ZL ZM ZN ZP ZQ ZR ZS ZT ZU ZV ZW ZX ZY ZZ VD VE VF VG VH VK VL VM VN VP VQ VR VT VS 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 189 209 209 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86.0 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 209 255 231 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 170 188 188 MAXIMUM REVERSE LEAKAGE AT VWM MAXIMUM PEAK PULSE SURGE CURRENT ID (µA) (3) IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 6.2 5.2 5.8 5.0 5.5 4.7 5.2 4.4 4.9 4.2 4.6 3.9 4.3 3.7 4.1 3.5 3.9 3.2 3.5 3.0 3.3 2.9 3.2 2.0 2.2 1.9 2.1 1.7 1.9 1.5 1.7 1.4 1.6 1.3 1.4 1.1 1.2 1.0 1.2 0.99 1.09 0.90 0.91 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 268 243 287 259 304 275 344 328 Notes: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMAJ5.0CA, the maximum VBR is 7.25 V (6) VF = 3.5 V at IF = 25 A (uni-directional only) Document Number: 88390 Revision: 29-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 SMAJ5.0 thru SMAJ188CA Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient SYMBOL VALUE UNIT RθJA 120 °C/W RθJL 30 °C/W (1) Typical thermal resistance, junction to lead Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMAJ5.0A-E3/61 0.064 61 1800 7" diameter plastic tape and reel SMAJ5.0A-E3/5A 0.064 5A 7500 13" diameter plastic tape and reel SMAJ5.0AHE3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel SMAJ5.0AHE3/5A (1) 0.064 5A 7500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 SMAJ85 SMAJ188 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform 100 4.0 10 000 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % SMAJ5.0 SMAJ78 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Stand-Off Voltage VWM 1000 Uni-Directional 100 Bi-Directional 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (°C) VWM - Reverse Stand-Off Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 200 Document Number: 88390 Revision: 29-Oct-08 SMAJ5.0 thru SMAJ188CA Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (°C/W) 1000 100 10 1 0.001 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0.01 0.1 1.0 10 100 1000 1 5 10 50 100 tp - Pulse Duration (s) Number of Cycles at 60 Hz Figure 5. Typical Transient Thermal Impedance Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88390 Revision: 29-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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