SQM120P06-07L

SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® power MOSFET PRODUCT SUMMARY VDS (V) • Package with low thermal resistance -60 RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V 0.0067 • 100 % Rg and UIS tested 0.0088 • AEC-Q101 qualified d ID (A) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -120 Configuration Single S TO-263 G S D D G Top View P-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120P06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 TC = 25 °C a Continuous Drain Current a Continuous Source Current (Diode Conduction) Pulsed Drain Current TC = 125 °C a b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V -120 -98 IS -120 IDM -480 IAS -80 EAS 320 PD UNIT 375 125 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S20-0525-Rev. C, 06-Jul-2020 Document Number: 67026 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P06-07L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = -60 V - - -1 - - -50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -60 V, TJ = 125 °C VGS = 0 V VDS = -60 V, TJ = 175 °C - - -250 On-State Drain Current a ID(on) VGS = -10 V VDS  -5 V -120 - - VGS = -10 V ID = -30 A - 0.0056 0.0067 Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = -10 V ID = -30 A, TJ = 125 °C - - 0.0110 VGS = -10 V ID = -30 A, TJ = 175 °C - - 0.0130 VGS = -4.5 V ID = -20 A VDS = -15 V, ID = -30 A - 0.0070 0.0088 - 90 - V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = -25 V, f = 1 MHz Qg Qgs VGS = -10 V VDS = -30 V, ID = -110 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -30 V, RL = 0.27  ID  -110 A, VGEN = -10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristics - 11 423 14 280 - 1034 1295 - 809 1015 - 180 270 - 31 - - 43 - 1.1 2.27 3.5 - 15 23 pF nC  - 23 35 - 97 146 - 32 48 - - -480 A - -0.95 -1.5 V ns b Pulsed Current a ISM Forward Voltage VSD IF = -100 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0525-Rev. C, 06-Jul-2020 Document Number: 67026 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 200 150 V GS = 10 V thru 5 V 120 V GS = 4 V ID - Drain Current (A) ID - Drain Current (A) 160 120 80 90 60 T C = 25 °C 40 30 V GS = 3 V T C = 125 °C 0 T C = - 55 °C 0 0 3 6 9 12 15 0 1 VDS - Drain-to-Source Voltage (V) 0.020 160 0.016 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 200 T C = - 55 °C T C = 25 °C 80 T C = 125 °C 40 0.012 V GS = 4.5 V 0.008 V GS = 10 V 0.004 0 0 0 16 32 48 64 80 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) 100 120 On-Resistance vs. Drain Current Transconductance 10 15 000 VGS - Gate-to-Source Voltage (V) Ciss 12 500 C - Capacitance (pF) 5 Transfer Characteristics Output Characteristics 120 2 3 4 VGS - Gate-to-Source Voltage (V) 10 000 7500 5000 2500 ID = 110 A 8 V DS = 30 V 6 4 2 Coss Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance S20-0525-Rev. C, 06-Jul-2020 60 0 20 40 60 80 100 120 140 160 180 200 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67026 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P06-07L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 100 1.7 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 30 A 1.4 1.1 T J = 150 °C 1 T J = 25 °C 0.1 0.8 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.2 Source Drain Diode Forward Voltage 1.2 0.05 0.9 0.04 ID = 250 μA VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.03 0.02 0.6 ID = 5 mA 0.3 0 T J = 150 °C 0.01 - 0.3 T J = 25 °C - 0.6 - 50 0 0 2 4 6 8 10 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage - 60 VDS - Drain-to-Source Voltage (V) ID = 10 mA - 64 - 68 - 72 - 76 - 80 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S20-0525-Rev. C, 06-Jul-2020 Document Number: 67026 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P06-07L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) ID - Drain Current (A) 100 100 μs IDM Limited 10 ID Limited 1 1 ms 10 ms 100 ms, 1s, 10s, DC Limited by RDS(on) a 0.1 BVDSS Limited TC = 25 °C Single pulse 0.01 0.01 0.1 a) 1 10 100 VDS - Drain-to-Source Voltage (V) V GS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S20-0525-Rev. C, 06-Jul-2020 Document Number: 67026 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM120P06-07L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67026. S20-0525-Rev. C, 06-Jul-2020 Document Number: 67026 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000