SUD50N03-06AP-E3

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (
) ID (A)a, e 0.0057 @ VGS = 10 V 90 0.0078 @ VGS = 4.5 V 77 VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for Low–Side Synchronous Rectifier Operation D 100% Rg Tested Qg (Typ) 30 RoHS COMPLIANT APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N03-06AP—E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 70_C TA = 25_C 75a, e ID 30b, c 25b, c TA = 70_C Pulsed Drain Current IDM Source Drain Diode Current Continuous Source-Drain TC = 25_C TA = 25_C Avalanche Current Pulse L=0 0.1 1 mH Single Pulse Avalanche Energy TC = 70_C TA = 25_C 55a, e IS 6.7b, c IAS 45 EAS 101 mJ 83 58 PD W 10b, c 7b, c TA = 70_C Operating Junction and Storage Temperature Range A 100 TC = 25_C Maximum Power Dissipation V 90a, e TC = 25_C Continuous Drain Current (TJ = 175_C) Unit TJ, Tstg _C –55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t p 10 sec RthJA 12 15 Steady State RthJC 1.5 1.8 Unit _C/W Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50_C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73540 S–52237—Rev. A, 24-Oct-05 www.vishay.com 1 SUD50N03-06AP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 A 30 Typ Max Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 25 ID = 250 A VGS(th) Temperature Coefficient V mV/_C – 6.3 2.4 V VDS = 0 V, VGS = "20 V "100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55_C 10 VDS w 5 V, VGS = 10 V 1.2 50 A A A VGS = 10 V, ID = 20 A 0.0046 0.0057 VGS = 4.5 V, ID = 20 A 0.0062 0.0078 VDS = 15 V, ID = 30 A 70
S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 3800 VDS = 15 V, VGS = 0 V, f = 1 MHz 305 VDS = 15 V, VGS = 10 V, ID = 30 A Turn-On Delay Time Rise Time 1.4 12 18 10 15 30 45 tf 8 12 td(on) 26 40 230 345 25 40 9 14 td(off) Fall Time nC 0.9 tr Turn-Off Delay Time 45 f = 1 MHz td(off) Fall Time 95 30 11 tr Turn-Off Delay Time 62 VDS = 15 V, VGS = 4.5 V, ID= 25 A 9 td(on) Rise Time pF p 615 VDD = 15 V, RL = 0.5
ID ^ 30 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 0.6
ID ^ 25 A, VGEN = 4.5 V, Rg = 1
tf
ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS 55c TC = 25_C ISM VSD 100 IS = 6.7 A 0.9 1.5 A V Body Diode Reverse Recovery Time trr 65 100 ns Body Diode Reverse Recovery Charge Qrr 38 60 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 6 6.7 7A A, di/dt = 100 A/s A/s, TJ = 25_C 50 15 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Calculated based on maximum junction temperature. Package limitation current is 50 A. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73540 S–52237—Rev. A, 24-Oct-05 SUD50N03-06AP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 VGS = 10 V thru 4 V 80 I D – Drain Current (A) I D – Drain Current (A) 100 60 40 16 TC = –55_C 12 TC = 25_C 8 TC = 125_C 3V 20 4 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 0.012 4000 C – Capacitance (pF) rDS(on) – On-Resistance (
) 5000 0.009 VGS = 4.5 V 0.006 VGS = 10 V 60 80 3.5 4.0 3000 2000 Coss Crss 0 40 3.0 Ciss 1000 0.000 20 2.5 Capacitance On-Resistance vs. Drain Current 0 2.0 VGS – Gate-to-Source Voltage (V) 0.015 0.003 1.5 0 100 5 ID – Drain Current (A) 10 15 20 25 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 10 1.9 ID = 20 A 1.7 rDS(on) – On-Resistance (Normalized) VGS (V) 8 VDS = 15 V 6 VDS = 24 V 4 2 VGS = 4.5 V 1.5 VGS = 10 V 1.3 1.1 0.9 0 0 13 26 39 Qg (nC) Document Number: 73540 S–52237—Rev. A, 24-Oct-05 52 65 0.7 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature www.vishay.com 3 SUD50N03-06AP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage rDS(on) vs VGS vs. Temperature 0.05 100.000 0.04 rDS(on) On-Resistance (
) I S – Source Current (A) 10.000 TJ = 150_C 1.000 TJ = 25_C 0.100 0.03 0.02 125_C 0.01 0.010 25_C 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD – Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 600 2.3 2.1 500 1.9 400 Power (W) VGS(th) – (V) ID = 250 A 1.7 1.5 1.3 1.1 300 200 0.9 TA = 25_C 100 Single Pulse 0.7 0.5 –50 –25 0 25 50 75 100 125 150 0 0.001 175 0.01 TJ – Temperature (_C) 0.1 1 10 100 1000 Time (sec) Safe Operating Area 1000 *Limited by rDS(on) 100 10 µs 100 µs ID (A) 10 1 ms 10 ms 100 ms 1 1s 10s 100s DC 0.10 0.01 0.001 0.1 TA = 25_C Single Pulse 1 10 100 VDS (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73540 S–52237—Rev. A, 24-Oct-05 SUD50N03-06AP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating Power De-Rating 100 90 80 70 60 Power Drain Current (A) 75 50 50 40 Limited by Package 30 25 20 10 0 0 0 25 50 75 100 125 TC – Case Temperature (_C) Document Number: 73540 S–52237—Rev. A, 24-Oct-05 150 175 25 50 75 100 125 150 175 TC – Case Temperature (_C) www.vishay.com 5 SUD50N03-06AP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73540. www.vishay.com 6 Document Number: 73540 S–52237—Rev. A, 24-Oct-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1