TA6F10AHM3/6A

TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Very low profile - typical height of 0.95 mm SlimSMATM • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Ideal for automated placement Bottom View Top View DO-221AC • Uni-directional only • Excellent clamping capability • Peak pulse power: 600 W (10/1000 μs) • AEC-Q101 qualified • ESD capability: IEC 61000-4-2 level 4 - 15 kV (air) - 8 kV (contact) PRIMARY CHARACTERISTICS VBR 6.8 V to 51 V VWM 5.8 V to 43.6 V PPPM (10 x 1000 μs) 600 W PD at TM = 65 °C 6W TJ max. 185 °C Polarity Uni-directional Package DO-221AC (SlimSMA) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: DO-221AC (SlimSMA) Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable J-STD-002 and JESD22-B102 HM3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Peak pulse power dissipation Peak pulse current SYMBOL VALUE UNIT with a 10/1000 μs waveform PPPM (1) 600 W with a 10/1000 μs waveform (1) See next table A IPPM (2) Power dissipation on infinite heat sink, TM = 65 °C PD Power dissipation, TM = 25 °C PD (3) 1.1 TJ , TSTG -65 to +185 Operating junction and storage temperature range 6 W °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. A (2) Power dissipation mounted on infinite heat sink (3) Power dissipation mounted on minimum recommended pad layout Revision: 18-Apr-16 Document Number: 89939 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (1) AT IT DEVICE (V) MARKING CODE MIN. MAX. TA6F6.8A TA6F7.5A TA6F8.2A TA6F9.1A TA6F10A TA6F11A TA6F12A TA6F13A TA6F15A TA6F16A TA6F18A TA6F20A TA6F22A TA6F24A TA6F27A TA6F30A TA6F33A TA6F36A TA6F39A TA6F43A TA6F47A TA6F51A AEP AGP AKP AMP APP ARP ATP AVP AXP AZP BEP BGP BKP BMP BPP BRP BTP BVP BXP BZP CEP CGP 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 14.3 15.2 17.1 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 7.02 7.78 8.55 9.40 10.2 11.1 12.8 13.6 15.3 17.1 18.8 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 500 250 100 25 5.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 15.8 16.8 18.9 21.0 23.1 25.2 28.4 31.5 34.7 37.8 41.0 45.2 49.4 53.6 TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM IR (μA) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 1000 500 200 50 20 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10.0 10.0 10.0 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.5 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.5 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 Note (1) Pulse test: t  50 ms p THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to ambient Typical thermal resistance, junction to mount SYMBOL VALUE UNIT RJA (1) RJM(2) 145 20 °C/W °C/W Notes (1) Mounted on minimum recommended pad layout (2) Mounted on infinite heat sink IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25 °C unless otherwise noted) STANDARD IEC 61000-4-2 TEST TYPE Human body model (contact mode) Human body model (air discharge mode) TEST CONDITIONS SYMBOL CLASS VALUE C = 150 pF, R = 330  VC 4 > 8 kV > 15 kV ORDERING INFORMATION (Example) PREFERRED P/N TA6F6.8AHM3/6A (1) TA6F6.8AHM3/6B (1) TA6F6.8AHM3_A/H (1) TA6F6.8AHM3_A/I (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.032 0.032 0.032 0.032 6A 6B H I 3500 14 000 3500 14 000 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Apr-16 Document Number: 89939 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 0.1 Measured at Zero Bias 1000 Measured at Stand-off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 10 100 1000 10 000 1 10 td - Pulse Width (μs) VBR - Break-down Voltage (V) Fig. 4 - Typical Junction Capacitance 7 100 PD - Power Dissipation (W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % Fig. 1 - Peak Pulse Power Rating Curve 75 50 25 TA=TM, mounted on inifinite heatsink 6 5 4 3 2 FR-4 Board, on Minimum Recommended Pad Layout 1 0 0 0 25 50 75 100 125 150 175 0 200 TJ = 25 °C Pulse Width (td) is defined as the Point Where the Peak Current decays to 50 % of IPPM tr = 10 μs Peak Value IPPM 100 Half Value - IPP IPPM 2 50 td = 1000 μs td 0 0 1.0 2.0 t - Time (ms) Fig. 3 - Pulse Waveform 3.0 50 75 100 125 150 175 200 4.0 Fig. 5 - Power Dissipation Derating Curve Transient Thermal Impedance (°C/W) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature 150 25 TA - Ambient Temperature (°C) TJ - Initial Temperature (°C) IPPM - Peak Pulse Current (% IRSM) 100 1000 100 10 1 0.01 0.1 1 10 100 1000 tp - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 18-Apr-16 Document Number: 89939 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA6F6.8A thru TA6F51A www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-221AC (SlimSMA) Cathode Band 0.057 (1.45) 0.049 (1.25) 0.106 (2.70) 0.098 (2.50) 0.171 (4.35) 0.163 (4.15) 0.211 (5.35) 0.199 (5.05) 0.047 (1.20) 0.030 (0.75) Typ.: 0.019 (0.48) Mounting Pad Layout 0.039 (1.00) 0.035 (0.90) 0.060 (1.52) MIN. 0.012 (0.30) 0.006 (0.15) 0.047 (1.20) MIN. 0.123 (3.12) MAX. 0.217 (5.52) REF. 0.047 (1.20) MIN. Revision: 18-Apr-16 Document Number: 89939 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000