U1D-E3/61T

U1B, U1C, U1D www.vishay.com Vishay General Semiconductor Surface-Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) Cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 100 V, 150 V, 200 V IFSM 30 A trr 15 ns VF at IF = 1.0 A 0.76 V TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code U1B U1C U1D U1B U1C U1D 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V Revision: 09-Apr-2020 Document Number: 89400 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U1B, U1C, U1D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 0.6 A Instantaneous forward voltage TA = 25 °C IF = 1.0 A VF (1) IF = 0.6 A TA = 100 °C IF = 1.0 A Reverse current TA = 25 °C Rated VR Storage charge IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM Typical junction capacitance 4.0 V, 1 MHz MAX. 0.82 0.87 0.87 0.92 0.71 0.78 0.76 0.84 5.0 55 100 - 15 24 - TA = 100 °C 29 - TA = 25 °C 7 - 13 - 6.8 - IR (2) TA = 25 °C IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM TYP. - TA = 100 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse recovery time SYMBOL TA = 25 °C TA = 100 °C trr Qrr CJ UNIT V μA ns nC pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance U1B U1C RθJA (1) 115 RθJM (1) 22 U1D UNIT °C/W Note (1) Free air, mounted on recommended copper pad area ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE U1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel U1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel U1D-M3/61T 0.064 61T 1800 7" diameter plastic tape and reel U1D-M3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel Revision: 09-Apr-2020 Document Number: 89400 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U1B, U1C, U1D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 0.8 0.6 0.4 0.2 TJ = 150 °C 100 TJ = 125 °C TJ = 100 °C 1000 10 1 1st line 2nd line 2nd line Instantaneous Reverse Current (µA) Average Forward Current (A) 1.0 0 TJ = 25 °C 100 0.1 0.01 TJ = -40 °C 10 0.001 80 100 90 110 130 120 140 150 10 20 30 40 50 60 70 80 90 100 TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Derating Curve Fig. 4 - Typical Reverse Characteristics 1.0 10 D = 0.8 D = 0.5 D = 0.3 0.8 D = 0.2 Junction Capactiance (pF) Average Power Loss (W) 10000 1000 1.2 D = 1.0 D = 0.1 0.6 0.4 T 0.2 D = tp/T tp 0.8 1.0 0 0 0.2 0.4 0.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1.2 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Axis Title 100 10000 TJ = 150 °C 1 1000 TJ = 125 °C TJ = 100 °C 0.1 100 TJ = 25 °C TJ = -40 °C 0.01 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Transient Thermal Impedance (°C/W) 2nd line Instantaneous Forward Current (A) 10 Junction to Ambient 10 1 0.001 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 09-Apr-2020 Document Number: 89400 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 U1B, U1C, U1D www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 09-Apr-2020 Document Number: 89400 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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