U441-E3

U440/441 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) U440 –1 to –6 –25 4.5 –1 10 U441 –1 to –6 –25 4.5 –1 20 FEATURES BENEFITS APPLICATIONS D D D D D D D Minimum Parasitics Ensuring Maximum High-Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB. DESCRIPTION The U440/441 are matched pairs of JFETs mounted in a single TO-71 package. This two-chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications. The hermetically-sealed TO-71 package is available with full military screening per MIL-S-19500 (see Military Information). For similar products in SO-8 packaging see the SST440/SST441 data sheet. For low-noise options, see the SST/U401 series data sheet. For low-leakage alternatives, see the U421/423 data sheet. TO-71 S1 G2 1 D1 6 2 D2 5 3 4 G1 S2 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 V Power Dissipation : Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Document Number: 70251 S-04031—Rev. D, 04-Jun-01 Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 U440/441 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U440 Parameter Symbol Test Conditions Typa Min Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –35 –25 VGS(off) VDS = 10 V, ID = 1 nA –3.5 –1 VDS = 10 V, VGS = 0 V 15 6 VGS = –15 V, VDS = 0 V –1 U441 Max Min Max Unit Static Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Gate-Source Forward Voltage IDSS IGSS IG VGS(F) TA = 125_C VDG = 10 V, ID = 5 mA TA = 125_C IG = 1 mA , VDS = 0 V –25 –6 –1 30 6 –6 V 30 mA –500 –500 pA –500 –500 –2 nA –1 pA –0.3 nA 0.7 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage 6 VDS = 10 V, ID = 5 mA f = 1 kHz 70 9 200 4.5 9 mS 200 mS 3 VDS = 10 V, ID = 5 mA f = 1 MHz pF 1 VDS = 10 V, ID = 5 mA f = 10 kHz 4 |V GS1 – V GS2| VDG = 10 V, ID = 5 mA 6 D|V GS1 – V GS2| VDG = 10 V, ID = 5 mA TA = –55 to 125_C 20 VDS = 10 V, VGS = 0 V 0.97 gfs1 gfs2 VDS = 10 V, ID = 5 mA f = 1 kHz 0.97 CMRR VDG = 5 to 10 V, ID = 5 mA 85 en 4.5 nV⁄ √Hz Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratioc Transconductance Ratioc Common Mode Rejection Ratio DT I DSS1 I DSS2 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 10 20 mV mV/_C dB NZFD Document Number: 70251 S-04031—Rev. D, 04-Jun-01 U440/441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 20 IG(on) @ ID 16 12 30 20 8 gfs 10 4 IDSS 10 nA TA = 125_C I G – Gate Leakage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 40 100 nA gfs – Forward Transconductance (mS) I DSS – Saturation Drain Current (mA) 50 0 –4 –2 –6 –8 IGSS @ 125_C 100 pA 1 mA 1 mA 10 mA 10 pA TA = 25_C 1 pA 0 0 ID = 10 mA 1 nA IGSS @ 25_C 0.1 pA –10 0 4 VGS(off) – Gate-Source Cutoff Voltage (V) 8 12 16 VDG – Drain-Gate Voltage (V) Output Characteristics Output Characteristics 10 30 VGS(off) = –5 V VGS = 0 V VGS(off) = –2 V –0.5 V 8 24 6 I D – Drain Current (mA) VGS = 0 V I D – Drain Current (mA) 20 –0.2 V –0.4 V 4 –0.6 V –0.8 V 2 –1.0 V –1.5 V 18 –2.0 V 12 –2.5 V –3.0 V 6 –1.0 V –3.5 V –1.2 V 0 0 0 2 4 6 8 10 0 2 VDS – Drain-Source Voltage (V) Output Characteristics 6 8 10 Output Characteristics 5 15 VGS = 0 V VGS(off) = –2 V VGS(off) = –5 V –0.2 V –0.4 V 3 –0.6 V 2 –0.8 V –1.0 V 1 VGS = 0 V 12 I D – Drain Current (mA) 4 I D – Drain Current (mA) 4 VDS – Drain-Source Voltage (V) –0.5 V –1.0 V 9 –1.5 V –2.0 V 6 –2.5 V –3.0 V 3 –3.5 V –1.2 V 0 0 0 0.2 0.4 0.6 0.8 VDS – Drain-Source Voltage (V) Document Number: 70251 S-04031—Rev. D, 04-Jun-01 1 0 0.2 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) www.vishay.com 8-3 U440/441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics Transfer Characteristics 10 30 VGS(off) = –2 V VDS = 10 V VGS(off) = –5 V 24 TA = –55_C 6 I D – Drain Current (mA) I D – Drain Current (mA) 8 25_C 4 125_C 2 TA = –55_C 18 25_C 125_C 12 6 0 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 –1 VGS – Gate-Source Voltage (V) –4 –5 10 VGS(off) = –5 V VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) VGS(off) = –2 V gfs – Forward Transconductance (mS) –3 Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage 8 TA = –55_C 25_C 6 125_C 4 2 8 TA = –55_C 25_C 6 125_C 4 VDS = 10 V f = 1 kHz 2 0 0 0 –0.4 –1.2 –0.8 –1.6 –2 0 Circuit Voltage Gain vs. Drain Current 50 rDS(on) – Drain-Source On-Resistance ( Ω ) g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID 30 VGS(off) = –2 V VGS(off) = –5 V 20 –2 –4 –3 –5 On-Resistance vs. Drain Current 200 40 –1 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) A V – Voltage Gain –2 VGS – Gate-Source Voltage (V) 10 10 0 160 VGS(off) = –2 V 120 VGS(off) = –5 V 80 40 TA = 25_C 0 0.1 1 ID – Drain Current (mA) www.vishay.com 8-4 VDS = 10 V 10 1 10 100 ID – Drain Current (mA) Document Number: 70251 S-04031—Rev. D, 04-Jun-01 U440/441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 5 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz C iss – Input Capacitance (pF) 8 6 VDS = 5 V 4 VDS = 0 V 2 VDS = 10 V f = 1 MHz 4 3 VDS = 5 V 2 VDS = 0 V 1 VDS = 10 V 0 0 0 –4 –8 –12 –16 –20 0 –4 Input Admittance (mS) 10 –12 –16 Forward Admittance TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA gig 10 bis –bfs –gfg 1 –20 100 (mS) 100 –8 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) 1 big gfs bfg gis 0.1 0.1 100 200 500 1000 100 f – Frequency (MHz) 500 1000 f – Frequency (MHz) Reverse Admittance Output Admittance 100 10 TA = 25_C VDS = 10 V ID = 10 mA TA = 25_C VDS = 10 V ID = 10 mA –brs 10 (mS) (mS) 1 200 –brg –grs 0.1 –grg bog, bos 1 grg gog, gos 0.1 0.01 100 200 500 f – Frequency (MHz) Document Number: 70251 S-04031—Rev. D, 04-Jun-01 1000 100 200 500 1000 f – Frequency (MHz) www.vishay.com 8-5 U440/441 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 50 150 VDS = 10 V VGS(off) = –5 V en – Noise Voltage nV / Hz gos – Output Conductance (µS) 40 30 ID = 1 mA 20 ID = 10 mA 10 TA = –55_C 90 25_C 60 30 0 10 100 1k 10 k 100 k 0.1 1 10 f – Frequency (Hz) ID – Drain Current (mA) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 200 200 10 VGS(off) = –5 V 160 160 120 120 80 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 40 0 0 –2 –4 –6 –8 VGS(off) – Gate-Source Cutoff Voltage (V) www.vishay.com –10 gfs – Forward Transconductance (mS) gos gos – Output Conductance (µS) rDS(on) – Drain-Source On-Resistance ( Ω ) 120 125_C 0 8-6 VDS = 10 V f = 1 kHz VDS = 10 V f = 1 kHz 8 TA = –55_C 6 25_C 4 125_C 2 0 0.1 1 10 ID – Drain Current (mA) Document Number: 70251 S-04031—Rev. D, 04-Jun-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1