VS-10ETS08FPPBF

VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES • Very low forward voltage drop Base cathode • 150 °C max. operating junction temperature • Designed and JEDEC-JESD47 qualified according to • Fully isolated package (VINS = 2500 VRMS) TO-220 FULL-PAK • UL E78996 approved 3 Anode 1 Cathode PRODUCT SUMMARY Package TO-220FP IF(AV) 10 A VR 800 V to 1200 V VF at IF 1.1 V IFSM 160 A TJ max. 150 °C Diode variation Single die Available • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Input rectification • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines DESCRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A Capacitive input filter TA = 55 °C, TJ = 125 °C  common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range IFSM VF 10 A, TJ = 25 °C TJ VALUES UNITS 10 A 800/1200 V 160 A 1.1 V - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-10ETS08FPPbF, VS-10ETS08FP-M3 800 900 VS-10ETS12FPPbF, VS-10ETS12FP-M3 1200 1300 Revision: 18-Jun-13 IRRM AT 150 °C mA 0.5 Document Number: 94335 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle  non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 105 °C, 180° conduction half sine wave VALUES UNITS 10 10 ms sine pulse, rated VRRM applied 135 10 ms sine pulse, no voltage reapplied 160 A 10 ms sine pulse, rated VRRM applied 91 10 ms sine pulse, no voltage reapplied 130 t = 0.1 ms to 10 ms, no voltage reapplied 1300 A2s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage IRM Maximum reverse leakage current TEST CONDITIONS 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM 1.1 V 20 m 0.82 V 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS TEST CONDITIONS DC operation Marking device Revision: 18-Jun-13 UNITS - 40 to 150 °C 2.5 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Approximate weight Mounting torque VALUES Case style TO-220 FULL-PAK (94/V0) 10ETS08FP 10ETS12FP Document Number: 94335 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com 150 20 VS-10ETS.. Series RthJC (DC) = 2.5 °C/W 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 14 12 10 RMS limit 8 Ø Conduction period 6 4 120° VS-10ETS.. Series TJ = 150 °C 180° 0 0 2 4 6 8 10 0 12 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 VS-10ETS.. Series RthJC (DC) = 2.5 °C/W 130 130 Ø Conduction period 120 30° 60° 100 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 140 Peak Half Sine Wave Forward Current (A) 140 110 2 Fig. 1 - Current Rating Characteristics 150 Maximum Allowable Case Temperature (°C) 16 2 80 120 110 100 90 80 70 60 50 90° 120° 180° VS-10ETS..S Series 40 DC 90 30 0 16 2 4 6 8 10 12 14 16 18 12 100 Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 170 150 10 RMS limit 8 6 Ø 4 Conduction angle 2 VS-10ETS.. Series TJ = 150 °C 2 4 6 8 130 10 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 110 90 70 50 30 0 0 10 Number of Equal Amplitude Half Cycle Current Pulses (N) 180° 120° 90° 60° 30° 14 1 Average Forward Current (A) Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 18 Maximum Average Forward Power Loss (W) 140 Maximum Allowable Case Temperature (°C) Vishay Semiconductors 10 0.01 VS-10ETS..S Series 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 18-Jun-13 Document Number: 94335 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Instantaneous Forward Current (A) Vishay Semiconductors 100 TJ = 25 °C TJ = 150 °C 10 VS-10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 VS-10ETS.. Series 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 18-Jun-13 Document Number: 94335 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 E T S 12 FP PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: E = Single diode 4 - Package: T = TO-220 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating 7 - FULL-PAK 8 - Environmental digit: 08 = 800 V 12 = 1200 V PbF = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10ETS08FPPbF 50 1000 Antistatic plastic tubes VS-10ETS08FP-M3 50 1000 Antistatic plastic tubes VS-10ETS12FPPbF 50 1000 Antistatic plastic tubes VS-10ETS12FP-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 18-Jun-13 www.vishay.com/doc?95005 TO-220FP PbF www.vishay.com/doc?95009 TO-220FP -M3 www.vishay.com/doc?95440 Document Number: 94335 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000