VS-HFA180NH40PBF

VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 180 A FEATURES • Very low Qrr and trr Lug terminal anode • Designed and qualified for industrial level • UL approved file E222165 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode BENEFITS HALF-PAK (D-67) • Reduced RFI and EMI • Reduced snubbing DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) HEXFRED® diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and dIF/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. 180 A VR 400 V IF(DC) at TC 200 A at 100 °C Package HALF-PAK (D-67) Circuit configuration Single diode ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS VR TC = 25 °C MAX. UNITS 400 V 395 Continuous forward current IF TC = 100 °C 200 Single pulse forward current IFSM Limited by junction temperature 1200 Non-repetitive avalanche energy EAS L = 100 μH, duty cycle limited by maximum TJ 1.4 TC = 25 °C 657 TC = 100 °C 263 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg A mJ W -55 to +150 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Cathode to anode breakdown voltage VBR Maximum forward voltage VFM TEST CONDITIONS IR = 100 μA IF = 180 A IF = 360 A See fig. 1 IF = 180 A, TJ = 125 °C Maximum reverse  leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS From top of terminal hole to mounting plane MIN. TYP. MAX. 400 - - UNITS - 1.08 1.46 - 1.22 1.8 - 0.99 1.34 - - 4 - 370 500 pF - 6.0 - nH V mA Revision: 11-Jan-18 Document Number: 94061 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time See fig. 5 trr Peak recovery current See fig. 6 IRRM Reverse recovery charge See fig. 7 TEST CONDITIONS TYP. MAX. - 90 140 TJ = 125 °C - 280 440 - 9 16 - 18 32 - 300 950 - 2650 6300 TJ = 25 °C IF = 135 A dIF/dt = 200 A/μs VR = 200 V TJ = 125 °C TJ = 25 °C Qrr Peak rate of recovery current See fig. 8 MIN. TJ = 25 °C TJ = 125 °C dI(rec)M/dt TJ = 25 °C - 300 - TJ = 125 °C - 290 - UNITS ns A nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -55 to +150 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation See fig. 4 0.19 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.05 °C/W Approximate weight Mounting torque Terminal torque g oz. minimum 3 (26.5) maximum 4 (35.4) minimum 3.4 (30) maximum N·m (lbf · in) 5 (44.2) Case style HALF-PAK (D-67) 1000 10 TJ = 150 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) 30 1.06 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 1 TJ = 125 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 100 200 300 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage Revision: 11-Jan-18 Document Number: 94061 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors 80 60 TJ = 25 °C 1000 40 20 10 1 10 100 0 100 1000 1000 VR - Reverse Voltage (V) dIF/dt (A/µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Typical Recovery Current vs. dIF/dt 6000 160 140 5000 TJ = 125 °C TJ = 25 °C 120 4000 100 Qrr (nC) Maximum Allowable Case Temperature (°C) IF = 200 A IF = 180 A IF = 70 A 50 30 100 DC 80 60 IF = 200 A IF = 180 A IF = 70 A 3000 2000 40 1000 20 0 0 100 200 300 400 0 100 500 1000 IF(AV) - DC Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current Fig. 7 - Typical Stored Charge vs. dIF/dt 10 000 400 TJ = 125 °C TJ = 25 °C IF = 200 A IF = 180 A IF = 70 A 300 250 200 150 dI(rec)M/dt (A/µs) 350 trr (ns) TJ = 125 °C TJ = 25 °C 70 IRRM (A) CT - Junction Capacitance (pF) 10 000 200 A 180 A 70 A 1000 100 TJ = 125 °C TJ = 25 °C 50 0 100 1000 100 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt Revision: 11-Jan-18 Document Number: 94061 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors ZthJC - Thermal Response 1 0.1 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.001 0.01 1 0.1 10 t1 - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 11-Jan-18 Document Number: 94061 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA180NH40PbF www.vishay.com Vishay Semiconductors L = 100 µH IL(PK) High-speed switch D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Decay time Vd = 50 V V(AVAL) VR(RATED) Fig. 12 - Avalanche Test Circuit and Waveforms ORDERING INFORMATION TABLE Device code VS- HFA 1 2 180 N H 40 PbF 3 4 5 6 7 1 - Vishay Semiconductors product 2 - HEXFRED® family, electron irradiated 3 - Average current rating 4 - N = not isolated 5 - H = HALF-PAK (D-67) 6 - Voltage rating (400 V) 7 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95020 Revision: 11-Jan-18 Document Number: 94061 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK DIMENSIONS in millimeters (inches) 24.4 (0.96) 13 (0.51) 17.5 (0.69) 16.5 (0.65) 5 (0.20) 4 (0.16) 30 ± 0.05 (1.2 ± 0.002) 5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039) 21 (0.82) 20 (0.78) Ø 4.3 (Ø 0.169 - 0.1 0.0 - 0.004 ) 0.000 ¼" - 20 UNC 40 MAX. (1.58) Document Number: 95020 Revision: 20-May-09 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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