VS-MBRS190-M3/5BT

VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1A VR 90 V, 100 V VF at IF 0.78 V IRM 1 mA at 125 °C TJ max. 175 °C DESCRIPTION EAS 1.0 mJ Package SMB (DO-214AA) Circuit configuration Single The VS-MBRS190-M3, VS-MBRS1100-M3 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM VALUES UNITS 1.0 A 90, 100 V IFSM tp = 5 μs sine 870 A VF 1.0 Apk, TJ = 125 °C 0.63 V TJ Range -55 to +175 °C VS-MBRS190-M3 VS-MBRS1100-M3 UNITS 90 100 V VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 147 °C, rectangular waveform 1.0 5 μs sine or 3 μs rect. pulse 870 Following any rated load condition and with rated VRRM applied UNITS Maximum peak one cycle  non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse A 50 Revision: 17-Dec-2019 Document Number: 95744 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop See fig. 1 VFM (1) Maximum reverse leakage current See fig. 2 IRM (1) TEST CONDITIONS 1A TJ = 25 °C 0.78 TJ = 125 °C 0.62 VR = Rated VR TJ = 125 °C VALUES TJ = 25 °C UNITS V 0.5 mA 1.0 Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 42 pF Typical series inductance LS Measured lead to lead 5 mm from package body 2.0 nH 10 000 V/μs VALUES UNITS -55 to +175 °C Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TJ (1), TEST CONDITIONS TStg Maximum thermal resistance,  junction to lead RthJL (2) DC operation See fig. 4 36 Maximum thermal resistance,  junction to ambient RthJA DC operation 80 Approximate weight Marking device Case style SMB (DO-214AA) °C/W 0.10 g 0.003 oz. 19/10 Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA (2) Mounted 1" square PCB Revision: 17-Dec-2019 Document Number: 95744 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com IF - Instantaneous Forward Current (A) Vishay Semiconductors 10 IR - Reverse Current (mA) TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C 0.1 TJ = 100 °C 0.01 TJ = 75 °C TJ = 50 °C 0.001 0.0001 TJ = 25 °C 0.00001 0 20 40 60 80 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.2 0.4 0.6 0.8 1.0 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 2 - Maximum Forward Voltage Drop Characteristics CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 20 40 60 80 100 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 10 PDM t1 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC . 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 17-Dec-2019 Document Number: 95744 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRS190-M3, VS-MBRS1100-M3 Vishay Semiconductors 1.0 180 170 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 160 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 150 140 Square wave (D = 0.50) Rated VR applied 130 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 0.8 0.6 RMS limit 0.4 DC 0.2 See note (1) 0 110 0 0.4 0.8 1.2 0 1.6 0.3 0.6 0.9 1.2 1.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 17-Dec-2019 Document Number: 95744 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBRS190-M3, VS-MBRS1100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 S 1 100 -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - S = SMB (DO-214AA) 4 - Current rating (1 = 1 A) 5 - Voltage rating 6 - 90 = 90 V 100 = 100 V -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-MBRS190-M3/5BT 5BT 3200 13" diameter plastic tape and reel VS-MBRS1100-M3/5BT 5BT 3200 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?95516 SPICE model www.vishay.com/doc?96602 Revision: 17-Dec-2019 Document Number: 95744 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000