VS-ST110S16P1

VS-ST110SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES • Center gate • International standard case TO-94 (TO-209AC) • Compression bonded encapsulation for heavy duty operations such as severe thermal cycling • Hermetic glass-metal case with (Glass-metal seal over 1200 V) TO-94 (TO-209AC) ceramic insulator • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IT(AV) 110 A VDRM/VRRM 400 V, 800 V, 1200 V, 1600 V VTM 1.52 V IGT 150 mA TJ -40 °C to +125 °C Package TO-94 (TO-209AC) Circuit configuration Single SCR TYPICAL APPLICATIONS • DC motor controls • Controlled DC power supplies • AC controllers     MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 110 A 90 °C 175 ITSM I2t 50 Hz 2700 60 Hz 2830 50 Hz 36.4 60 Hz 33.2 VDRM/VRRM tq Typical TJ A kA2s 400 to 1600 V 100 μs -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST110S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 Revision: 27-Sep-17 Document Number: 94393 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST110SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave Maximum I2t for fusing I2t °C 175 2700 t = 10 ms t = 10 ms I2t A 90 t = 10 ms t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 2830 100 % VRRM  reapplied 2380 36.4 33.2 25.8 364 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.90 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.92 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 1.79 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 1.81 Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 23.5 t = 0.1 to 10 ms, no voltage reapplied VT(TO)1 Maximum holding current A 2270 Sinusoidal half wave, initial TJ = TJ maximum Low level value of threshold voltage Maximum on-state voltage UNITS 110 DC at 85 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt VALUES UNITS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM TEST CONDITIONS 500 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 2.0 Typical turn-off time tq ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100 SYMBOL TEST CONDITIONS VALUES UNITS μs BLOCKING PARAMETER Maximum critical rate of rise of  off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs Maximum peak reverse and  off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 20 mA Revision: 27-Sep-17 Document Number: 94393 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST110SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp  5 ms 5 TJ = TJ maximum, f = 50 Hz, d% = 50 1 IGT TJ = 25 °C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = -40 °C VGT TJ = 25 °C TJ = 125 °C DC gate current not to trigger IGD DC gate voltage not to trigger VGD A 20 V 5.0 TJ = 125 °C DC gate voltage required to trigger W 2.0 TJ = TJ maximum, tp  5 ms TJ = -40 °C DC gate current required to trigger UNITS MAX. TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction  temperature range TEST CONDITIONS TJ -40 to 125 Maximum storage temperature range TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.195 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.08 °C K/W Non-lubricated threads Mounting torque, ± 10 % 15.5 (137) Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet 14 (120) Nm (lbf · in) 130 g TO-94 (TO-209AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.035 0.025 120° 0.041 0.042 90° 0.052 0.056 60° 0.076 0.079 30° 0.126 0.127 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC  Revision: 27-Sep-17 Document Number: 94393 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST110SPbF Series www.vishay.com Vishay Semiconductors 130 ST110S Series RthJC (DC) = 0.195 K/W Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle 100 90 30° 60° 90° 120° 180° 80 0 20 40 60 80 100 120 ST110S Series RthJC (DC) = 1.95 K/W 120 110 Conduction Period 30° 100 60° 90 90° 120° 180° 80 0 20 Average On-state Current (A) W K/ .1 =0 K/ W K/ W SA R th K/ W e lt -D RMS Limit W K/ 0. 6 2 0. 100 0. 4 0. 5 W K/ 120 3 0. 0.8 a K/ W 1K /W 80 60 R Maximum Average On-state Power Loss (W) Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 140 40 60 80 100 120 140 160 180 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 160 DC 1.2 K/ W Conduction Angle 40 ST110S Series TJ = 125°C 20 0 0 20 40 60 80 100 120 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 220 = 1 0. K/ W W K/ 0.4 100 RMS Limit 80 Conduction Period 60 K/ W 0.5 K/ W 0.6 K/ W 0.8 K/ W 1K /W R 120 ta el -D 140 0. 3 A 160 W K/ 180 hS R t DC 180° 120° 90° 60° 30° 200 2 0. Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 1.2 K/ W 40 ST110S Series TJ = 125°C 20 0 0 20 40 60 80 100 120 140 160 180 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94393 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST110SPbF Series www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 2200 2000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 2400 Vishay Semiconductors 1800 1600 1400 1200 ST110S Series 1000 1 10 100 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 2400 Initial TJ = 125°C No Voltage Reapplied 2200 Rated VRRM Reapplied 2600 2000 1800 1600 1400 1200 ST110S Series 1000 0.01 0.1 1 10 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 Tj = 25˚C 100 Tj = 125˚C ST110S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (K/W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value R thJC = 0.195 K/W (DC Operation) 0.1 0.01 ST110S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Revision: 27-Sep-17 Document Number: 94393 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST110SPbF Series www.vishay.com Vishay Semiconductors Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr