VS-ST1280C04K1

VS-ST1280C..K Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey-PUK Version), 2310 A FEATURES • Center amplifying gate • Metal case with ceramic insulator • International standard case K-PUK (A-24) • High profile hockey PUK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • DC motor controls K-PUK (A-24) • Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 2310 A VDRM/VRRM 400 V, 600 V VTM 1.44 V IGT 100 mA TJ -40 °C to +125 °C Package K-PUK (A-24) Circuit configuration Single SCR • AC controllers         MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 °C 4150 A 25 °C 42 500 60 Hz 44 500 50 Hz 9027 60 Hz 8240 Typical TJ UNITS 2310 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 600 V 200 μs -40 to +125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST1280C..K VOLTAGE CODE VRSM, MAXIMUM IDRM/IRRM MAXIMUM VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 04 400 500 06 600 700 100 Revision: 21-Sep-17 Document Number: 93718 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VALUES A 55 (85) °C 4150 No voltage reapplied 42 500 100 % VRRM  reapplied 35 700 No voltage reapplied 44 500 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM  reapplied t = 0.1 to 10 ms, no voltage reapplied 9027 8241 6383 90 270 VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.83 VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.90 Low level value of on-state slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.077 High level value of on-state slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.068 Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 VTM IH Typical latching current IL TJ = 25 °C, anode supply 12 V resistive load kA2s 5828 High level value of threshold voltage Maximum holding current A 37 400 Low level value of threshold voltage Maximum on-state voltage UNITS 2310 (885) 600 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr  1 μs TJ = TJ maximum, anode voltage  80 % VDRM VALUES UNITS 1000 A/μs Typical delay time td Gate current 1 A, dIg/dt = 1 A/μs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,  VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 200 μs BLOCKING PARAMETER SYMBOL Maximum critical rate of rise of  off-state voltage dV/dt Maximum peak reverse and  off-state leakage current IRRM, IDRM TEST CONDITIONS VALUES UNITS TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs TJ = TJ maximum, rated VDRM/VRRM applied 100 mA Revision: 21-Sep-17 Document Number: 93718 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 16 TJ = TJ maximum, f = 50 Hz, d% = 50 3 IGD DC gate voltage not to trigger VGD V 5.0 TJ = -40 °C 200 - TJ = 25 °C 100 200 50 - TJ = 25 °C TJ = 125 °C DC gate current not to trigger A 20 Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 3.0 TJ = TJ maximum, tp  5 ms TJ = -40 °C VGT TYP. MAX. TJ = TJ maximum, tp  5 ms TJ = 125 °C DC gate voltage required to trigger VALUES TEST CONDITIONS 1.4 - 1.1 3.0 0.9 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.042 DC operation double side cooled 0.021 DC operation single side cooled 0.006 DC operation double side cooled K/W 0.003 Mounting force, ± 10 % Approximate weight Case style °C See dimensions - link at the end of datasheet 24 500 (2500) N (kg) 425 g K-PUK (A-24) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.003 0.003 0.002 0.002 120° 0.004 0.004 0.004 0.004 90° 0.005 0.005 0.005 0.005 60° 0.007 0.007 0.007 0.007 30° 0.012 0.012 0.012 0.012 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 21-Sep-17 Document Number: 93718 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series 130 Vishay Semiconductors ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 110 100 90 Conduction Angle 80 70 30˚ 60 60˚ 90˚ 50 120˚ 180˚ 40 0 400 800 1200 1600 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) www.vishay.com 130 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 120 110 100 90 80 Conduction Period 70 60 30˚ 50 40 30 90˚ 120˚ 180˚ 20 0 Average On-state current (A) 110 100 90 80 Conduction Period 70 60 30˚ 50 60˚ 90˚ 40 120˚ 30 180˚ DC 20 0 500 1000 1500 2000 2500 ST1280C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 110 100 90 Conduction Angle 80 70 60 50 30˚ 60˚ 40 90˚ 120˚ 180˚ 30 0 4000 5000 3200 180˚ 120˚ 90˚ 60˚ 30˚ 2800 2400 2000 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics RMS Limit 1600 1200 Conduction Angle 800 ST1280C..K Series T J = 125˚C 400 0 0 500 1000 1500 2000 2500 3000 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) Fig. 2 - Current Ratings Characteristics 120 3000 3600 Average On-state current (A) 130 2000 Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (°C) ST1280C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 120 1000 DC Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 60˚ 5000 4500 DC 180˚ 120˚ 90˚ 60˚ 30˚ 4000 3500 3000 2500 RMS Limit 2000 Conduction Period 1500 1000 ST1280C..K Series TJ = 125˚C 500 0 0 1000 2000 3000 4000 5000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 21-Sep-17 Document Number: 93718 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series 40000 Vishay Semiconductors Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125˚C 35000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 30000 25000 20000 ST1280C..K Series 15000 1 10 100 45000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 ˚C 40000 No Voltage Reapplied Rated V RRMReapplied 35000 30000 25000 20000 ST1280C..K Series 15000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 100000 10000 TJ = 25˚C TJ = 125˚C 1000 ST1280C..K Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) (K/W) Fig. 9 - On-State Voltage Drop Characteristics 0.1 Transient Thermal Impedance Z thJ-hs Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) 0.01 (DC Operation) ST1280C..K Series 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 21-Sep-17 Document Number: 93718 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST1280C..K Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr