VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
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Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 95 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
PRIMARY CHARACTERISTICS
IT(AV) or IF(AV)
95 A
Type
Modules - thyristor, standard
Package
AAP Gen 7 (TO-240AA)
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
IT(AV) or IF(AV)
85 °C
IO(RMS)
As AC switch
210
ITSM,
IFSM
50 Hz
2000
60 Hz
2094
50 Hz
20
60 Hz
18.26
I2t
I2t
VRRM
200
Range
UNITS
95
A
kA2s
kA2s
400 to 1600
V
TStg
-40 to +125
°C
TJ
-40 to +125
°C
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
04
400
500
400
06
600
700
600
VS-VSK.91
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM, IDRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
IT(AV)
Maximum average forward current (diodes)
IF(AV)
Maximum continuous RMS on-state current,
as AC switch
TEST CONDITIONS
VALUES
180° conduction, half sine wave,
TC = 85 °C
IO(RMS)
I(RMS)
or
UNITS
95
I(RMS)
210
A
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
ITSM
or
IFSM
No voltage
reapplied
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
I2t (1)
VT(TO) (2)
rt (2)
Sinusoidal
half wave,
initial TJ = TJ maximum
t = 8.3 ms
100 % VRRM
reapplied
t = 10 ms
2094
1682
1760
20
No voltage
reapplied
t = 8.3 ms
Maximum I2t for fusing
2000
Initial TJ = TJ maximum
18.26
14.14
12.91
t = 0.1 ms to 10 ms, no voltage reapplied
TJ = TJ maximum
200
Low level (3)
0.97
High level
(4)
Low level (3)
High level
(4)
VTM
ITM = x IT(AV)
VFM
IFM = x IF(AV)
dI/dt
TJ = TJ maximum
TJ = TJ maximum
TJ = 25 °C
kA2s
1.1
2.76
2.38
kA2s
V
m
1.73
V
TJ = 25 °C, from 0.67 VDRM,
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
A/μs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
250
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
mA
Notes
(1) I2t for time t = I2t x t
x
x
(2) Average power = V
2
T(TO) x IT(AV) + rt x (IT(RMS))
(3) 16.7 % x x I
AV < I < x IAV
(4) I > x I
AV
Revision: 26-Jul-2018
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TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
TEST CONDITIONS
VALUES
PGM
12
PG(AV)
3.0
IGM
3.0
- VGM
A
10
Anode supply = 6 V
resistive load
TJ = 25 °C
VGT
1.7
270
TJ = -40 °C
Anode supply = 6 V
resistive load
TJ = 25 °C
IGT
V
2.5
TJ = 125 °C
Maximum gate current required to trigger
W
4.0
TJ = -40 °C
Maximum gate voltage required to trigger
UNITS
mA
150
TJ = 125 °C
80
Maximum gate voltage that will not trigger
VGD
TJ = 125 °C, rated VDRM applied
0.25
V
Maximum gate current that will not trigger
IGD
TJ = 125 °C, rated VDRM applied
6
mA
VALUES
UNITS
15
mA
3000 (1 min)
3600 (1 s)
V
1000
V/μs
VALUES
UNITS
-40 to +125
°C
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM
TJ = 125 °C, gate open circuit
Maximum RMS insulation voltage
VINS
50 Hz
Maximum critical rate of rise of off-state voltage
TJ = 125 °C, linear to 0.67 VDRM
dV/dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum internal thermal resistance,
junction to case per leg
RthJC
DC operation
0.22
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.1
°C/W
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
to heatsink
Mounting torque ± 10 %
busbar
4
Nm
3
Approximate weight
JEDEC®
Case style
75
g
2.7
oz.
AAP Gen 7 (TO-240AA)
R CONDUCTION PER JUNCTION
DEVICES
VSK.91..
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
0.04
0.048
0.063
0.085
0.125
0.033
0.052
0.067
0.088
0.127
UNITS
°C/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94632
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Maximum average on-state power loss (W)
130
RthJC (DC) = 0.22°C/W
120
110
100
90
180°
120°
90°
60°
30°
80
70
0
Maximum allowable case temperature (°C)
Vishay Semiconductors
20
40
60
80
180°
120°
90°
60°
30°
200
180
160
DC
140
120
RMS limit
100
80
60
40
20
Per leg, Tj = 125°C
0
100
0
20
40
60
80 100 120 140 160
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
1800
130
RthJC (DC) = 0.22°C/W
120
110
100
DC
180°
120°
90°
60°
30°
90
80
70
0
20
40
60
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
1600
1400
1200
1000
Per leg
800
80 100 120 140 160
1
10
100
Number of equal amplitude half cycle current pulses (N)
Average on-state current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
2000
160
180°
120°
90°
60°
30°
140
120
100
Peak half sine wave on-state current (A)
Maximum average on-state power loss (W)
220
Average on-state current (A)
Peak half sine wave on-state current (A)
Maximum allowable case temperature (°C)
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RMS limit
80
60
40
20
Per leg, Tj = 125°C
0
0
20
40
60
80
100
Average on-state current (A)
Fig. 3 - On-State Power Loss Characteristics
1800
1600
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration. Control
of conduction may not be maintained.
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
1400
1200
1000
Per leg
800
0.01
0.1
1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
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Maximum total on-state power loss (W)
400
350
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
180°
120°
90°
60°
30°
300
250
200
150
100
VSK.91 Series
Per module
Tj = 125°C
50
0
0
40
80
120
160
200
Total RMS output current (A)
240
0
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Maximum total power loss (W)
700
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
2 °C/W
180°
(sine)
180°
(rect)
600
500
400
∼
300
200
2 x VSK.91 Series
single phase bridge connected
Tj = 125°C
100
0
0
50
100
150
0
200
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Total output current (A)
Fig. 8 - On-State Power Loss Characteristics
Maximum total power loss (W)
900
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
800
700
600
120°
(rect)
500
400
300
200
3 x VSK.91 Series
three phase bridge connected
Tj = 125°C
100
0
0
40
80
120
160
Total output current (A)
200
0
240
20
40
60
80
100 120 140
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
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Instantaneous on-state current (A)
1000
Per leg
100
10
Tj = 125°C
Tj = 25°C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage (V)
Transient thermal impedance Z thJC (°C/W)
Fig. 10 - On-State Voltage Drop Characteristics
1
Steady state value
RthJC = 0.22 °C/W
(DC operation)
0.1
Per leg
0.01
0.001
0.001
0.01
0.1
1
10
Square wave pulse duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
Rec tangular ga te pulse
a )Recommend ed load line for
ra ted di/ d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b )Recommend ed load line for
= 6 µs
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(a)
(b)
1
TJ = -40 °C
TJ = 125 °C
TJ = 25 °C
Instantaneous gate voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.71../
VSK..91.. Series Frequenc y Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous gate current (A)
Fig. 12 - Gate Characteristics
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ORDERING INFORMATION TABLE
Device code
VS-VS
K
T
91
1
2
3
4
1
-
/
16
5
Vishay Semiconductors product
2
-
Module type
3
-
Circuit configuration (see Circuit Configuration table)
4
-
Current code (95 A)
5
-
Voltage code (see Voltage Ratings table)
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
(1)
~
VSKT
Two SCRs doubler circuit
1
+
2
T
(2)
3
4 5 7 6
(3)
G1 K1 K2 G2
(4) (5) (7) (6)
(1)
~
VSKH
SCR/diode doubler circuit, positive control
1
+
2
H
(2)
3
4 5
(3)
G1 K1
(4) (5)
(1)
~
VSKL 1
SCR/diode doubler circuit, negative control
2
L
+
(2)
3
7 6
(3)
K2 G2
(7) (6)
(1)
-
VSKN
SCR/diode common anodes
1
2
N
+
(2)
3
4 5
+
(3)
G1 K1
(4) (5)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95368
Revision: 26-Jul-2018
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Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Thyristor
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
30 ± 1 (1.18 ± 0.039)
15.5 ± 0.5
(0.6 ± 0.020)
24 ± 0.5
(1 ± 0.020)
Viti M5 x 0.8
Screws M5 x 0.8
6.7 ± 0.3 (0.26 ± 0.012)
Fast-on tab 2.8 x 0.8 (0.110 x 0.03)
Document Number: 95368
Revision: 11-Nov-08
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
5.8 ± 0.25 (0.228 ± 0.010)
15 ± 0.5 (0.59 ± 0.020)
For technical questions, contact: indmodules@vishay.com
4 ± 0.2 (0.157 ± 0.008)
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
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