2SD560

TIGER ELECTRONIC CO.,LTD Product specification NPN Silicon Power Ttransistors 2SD560 DESCRIPTION The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 150 100 7.0 5.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=100V, IE=0 VEB=7.0V, IC=0 IC=30mA, IB=0 VCE=2.0V, IC=3.0A VCE=2.0V, IC=5.0A Min. — — 100 2000 500 — — 4.0 Typ. — — — — — — — — Max. 1.0 10 — 15000 — 1.5 2.0 — V V MHz Unit uA uA V O ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) IC=3.0A,IB=3.0mA VBE(sat) IC=3.0A,IB=3.0mA fT VCE=10V,IC=500mA hFE Classification classification hFE1 R 2000~5000 O 3000~7000 Y 5000~15000