BUL128D

TIGER ELECTRONIC CO.,LTD Product specification HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ ■ ■ BUL128D DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting APPLICATIONS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature ol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 700 400 9.0 4.0 2.0 70 150 -65~150 Unit V V V A A W o o C C TO-220AB Storage Temperature (Tcase = 25 ℃ unless otherwise specified) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage Emitter-Base BreakdownVoltage (IC=0) DC Current Gain Symbol Test Conditions VCE=700V, IE=0 VEB=9V, IC=0 IC=100mA, IB=0 IE=10mA VCE=5V, IC=2.0A VCE=5V, IC=10mA IC=1.0A,IB=0.2A IC =4.0A, IB=1.0A IC=1.0A,IB=0.2A IC =2.5A,IB=0.5A IC=2.0A IB1=-IB2=0.4A Min. — — 400 9 12 10 — — — — 2.0 Typ. — — — — — — — 0.5 — — — Max. 0.25 0.1 — 18 32 — 1.0 — 1.2 1.3 2.9 us V Unit mA mA V V ICES IEBO VCEO BVEBO hFE(1) hFE(2) VCE(sat) VBE(sat) TS Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time V