MMBT5551LT1

TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage. .......................................................................................180 V VCEO Collector to Emitter Voltage. ....................................................................................160 V VEBO Emitter to Base Voltage ...............................................................................................6 V IC Collector Current ........................................................................ .................................600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 0.15 0.2 1 1 250 300 6 Unit V V V nA nA V V V V Test Conditions IC=100uA IC=1.0mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1.0mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, VCE=10V, f=100MHz VCB=10V, f=1MHz MHz pF TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD Characteristics Curve Current Gain & Collector Current 1000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB VCE=5V hFE 100 100 VCE(sat) @ IC=10IB 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Curren (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current 10 Cutoff Frequency (MHz) Capacitance (pF) 100 VCE=10V Cob 1 0.1 1 10 100 1000 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) Safe Operating Area 10000 1000 Collecotr Current-IC (mA) PT=1s 100 PT=1ms PT=100ms 10 1 1 10 100 1000 Forward Biased Voltage-VCE (V) TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD SOT-23 Dimension Marking : L A 3 B 1 2 S G1 V G 3-Lead SOT-23 Plastic Surface Mounted Package C D K Style : Pin 1.Base 2.Emitter 3.Collector *:Typical H J DIM A B C D G H Inches Min. Max. 0.1102 0.118 0.0550 0.0630 0.0354 0.0512 0.0118 0.0197 0.0669 0.0910 0.0040 Millimeters Min. Max. 2.80 3.00 1.40 1.60 0.90 1.30 0.30 0.50 1.70 2.30 0.10 DIM J K L S V Inches Min. Max. 0.0035 0.0043 0.0128 0.0266 0.0335 0.0453 0.0886 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.09 0.11 0.32 0.67 0.85 1.15 2.25 2.75 0.25 0.65 TIGER ELECTRONIC CO.,LTD