2SC5065-O(TE85L,F)

2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1 dB, |S21e|2 = 12 dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Tj 125 °C Tstg −55 to 125 °C Junction temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit GHz VCE = 5 V, IC = 10 mA 5 7 ⎯ 2 VCE = 5 V, IC = 10 mA, f = 500 MHz ⎯ 17 ⎯ 2 VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ⎯ NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ⎯ 1 ⎯ NF (2) VCE = 5 V, IC = 3 mA, f = 1 GHz ⎯ 1.1 2.0 Min Typ. Max Unit fT ⎪S21e⎪ (1) ⎪S21e⎪ (2) dB dB Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA VCE = 5 V, IC = 10 mA 80 ⎯ 240 ⎯ ⎯ 0.7 ⎯ pF ⎯ 0.45 0.9 pF DC current gain hFE (Note 1) Output capacitance Cob Reverse transfer capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz Note 1: hFE classification O: 80 to 160, Y: 120 to 240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 (Note 2) Start of commercial production 1993-07 2014-03-01 2SC5065 Marking 2 2014-03-01 2SC5065 3 2014-03-01 2SC5065 S-Parameter ZO = 50 Ω, Ta = 25°C VCE = 5 V, IC = 5 mA Frequency (MHz) S11 Mag. S21 S12 S22 Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.753 −43.7 10.247 140.6 0.040 65.6 0.827 −22.6 400 0.531 −75.1 7.684 117.1 0.060 57.1 0.648 −30.3 600 0.384 −96.4 5.815 103.0 0.074 56.1 0.551 −32.0 800 0.305 −112.6 4.523 93.6 0.086 57.0 0.500 −32.3 1000 0.255 −126.5 3.788 86.3 0.099 58.9 0.472 −32.4 1200 0.224 −138.4 3.244 80.7 0.112 60.2 0.455 −32.2 1400 0.203 −150.1 2.833 75.4 0.127 60.3 0.442 −32.6 1600 0.187 −159.4 2.529 70.6 0.139 60.0 0.434 −33.0 1800 0.174 −166.5 2.283 66.7 0.150 60.3 0.429 −32.6 2000 0.176 −171.2 2.107 63.0 0.164 59.2 0.428 −32.2 VCE = 5 V, IC = 10 mA Frequency S11 S21 S12 S22 (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.591 −58.0 14.955 129.6 0.034 64.3 0.714 −27.5 400 0.367 −90.3 9.581 107.5 0.052 61.9 0.534 −30.8 600 0.260 −110.7 6.781 96.1 0.067 63.9 0.462 −30.1 800 0.209 −126.9 5.207 88.6 0.083 65.2 0.428 −29.2 1000 0.178 −141.8 4.269 82.5 0.100 66.4 0.412 −28.6 1200 0.160 −153.7 3.618 77.7 0.117 66.7 0.403 −28.3 1400 0.150 −166.3 3.152 72.7 0.135 65.4 0.398 −28.8 1600 0.141 −175.2 2.801 68.7 0.149 64.0 0.393 −29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 −29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.395 −28.6 4 2014-03-01 2SC5065 5 2014-03-01 2SC5065 6 2014-03-01 2SC5065 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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