RN4609
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process)
(Transistor with Built-in Bias Resistor)
RN4609
Switching, Inverter Circuit,
Unit: mm
Interface Circuit and Driver Circuit
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process and
iniaturize equipment.
Equivalent Circuit and Bias Resistor Values
R1: 47kΩ
R2: 22kΩ
(Q1, Q2 Common)
JEITA
―
2-3N1A
Weight: 15 mg (typ.)
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−15
V
IC
−100
mA
Collector current
―
TOSHIBA
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
JEDEC
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
IC
100
mA
Collector current
Start of commercial production
1988-11
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Toshiba Electronic Devices & Storage Corporation
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2019-11-01
RN4609
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
PC *
300
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Marking
Equivalent Circuit (Top View)
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Toshiba Electronic Devices & Storage Corporation
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2019-11-01
RN4609
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Symbol
Test
Circuit
ICBO
―
ICEO
Test Condition
Min
Typ.
Max
Unit
VCB = −50 V, IE = 0 mA
―
―
−100
―
VCE = −50 V, IB = 0 mA
―
―
−500
IEBO
―
VEB = −15 V, IC = 0 mA
−0.167
―
−0.311
mA
nA
hFE
―
VCE = −5 V, IC = −10 mA
70
―
―
―
VCE (sat)
―
IC = −5 mA, IB = −0.25 mA
―
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
―
VCE = −0.2 V, IC = −5 mA
−2.2
―
−5.8
V
Input voltage (OFF)
VI (OFF)
―
VCE = −5 V, IC = −0.1 mA
−1.5
―
−2.6
V
Transition frequency
fT
―
VCE = −10 V, IC = −5 mA
―
200
―
MHz
Cob
―
―
3
6
pF
Min
Typ.
Max
Unit
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
VCB = −10 V, IE = 0 mA,
f = 1 MHz
Q2 Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
ICBO
―
VCB = 50 V, IE = 0 mA
―
―
100
ICEO
―
VCE = 50 V, IB = 0 mA
―
―
500
Emitter cut-off current
IEBO
―
VEB = 15 V, IC = 0 mA
0.167
―
0.311
mA
DC current gain
hFE
―
VCE = 5 V, IC = 10 mA
70
―
―
―
VCE (sat)
―
IC = 5 mA, IB = 0.25 mA
―
0.1
0.3
V
Input voltage (ON)
VI (ON)
―
VCE = 0.2 V, IC = 5 mA
2.2
―
5.8
V
Input voltage (OFF)
VI (OFF)
―
VCE = 5 V, IC = 0.1 mA
1.5
―
2.6
V
Transition frequency
fT
―
VCE = 10 V, IC = 5 mA
―
250
―
MHz
Cob
―
―
3
6
pF
Characteristic
Collector cut-off current
Collector-emitter saturation voltage
Collector output capacitance
Test Condition
VCB = 10 V, IE = 0 mA,
f = 1 MHz
nA
Q1, Q2 Common Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistance
R1
―
―
32.9
47
61.1
kΩ
Resistance ratio
R1/R2
―
―
1.92
2.14
2.35
―
Characteristic
© 2019
Toshiba Electronic Devices & Storage Corporation
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RN4609
Q1,Q2 characteristics curves
Q1
RN4609
Q2
RN4609
Q2
RN4609
Q1
RN4609
Q1
RN4609
Q2
RN4609
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
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2019-11-01
RN4609
RESTRICTIONS ON PRODUCT USE
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Hardware, software and systems described in this document are collectively referred to as “Product”.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
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2019-11-01