SSM6J07FU_07

SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch High Speed Switching Applications • • Small package Low on resistance : Ron = 450 mΩ (max) (VGS = −10 V) : Ron = 800 mΩ (max) (VGS = −4 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ±20 −0.8 −1.6 300 150 −55~150 Unit V V A mW °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Marking Equivalent Circuit (top view) 6 Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 6 5 4 5 4 0.4 mm 0.8 mm KDF 1 2 3 1 2 3 1 2007-11-01 SSM6J07FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±16 V, VDS = 0 ID = −1 mA, VGS = 0 VDS = −30 V, VGS = 0 VDS = −5 V, ID = −0.1 mA VDS = −5 V, ID = −0.4 A ID = −0.4 A, VGS = −10 V Drain-source ON resistance RDS (ON) ID = −0.4 A, VGS = −4 V ID = −0.4 A, VGS = −3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min ⎯ −30 ⎯ −1.1 0.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 350 570 0.7 130 16 52 28 38 Max ±1 ⎯ −1 −1.8 ⎯ 450 800 1.6 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V S mΩ Ω pF pF pF ns ns VDS = −15 V, VGS = 0, f = 1 MHz VDS = −15 V, VGS = 0, f = 1 MHz VDS = −15 V, VGS = 0, f = 1 MHz VDD = −15 V, ID = −0.4 A, VGS = 0~−4 V, RG = 10 Ω Note 2: Pulse test Switching Time Test Circuit (a) Test circuit ID Input RG −4 V VDD Output (b) VIN 0V 0 −4 V 10 μs 10% 90% (c) VOUT VDS (ON) VDD = −15 V RG = 10 Ω D.U. < 1% = Input: tr, tf < 5 ns Common source Ta = 25°C 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6J07FU ID – VDS −2 Common Source −10 −4 Ta = 25°C −3000 −1000 Common Source VDS = −5 V ID – VGS Ta = 100°C 25°C −25°C (mA) Drain current ID −2 (A) −1.5 −3.3 −100 Drain current ID −1 −3.0 −2.8 −0.5 −2.6 −10 −1 −0.1 0 0 VGS = −2.4 V −0.5 −1 −1.5 −0.01 0 −0.5 −1 −1.5 −2 −2.5 −3 −3.5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 1600 Common Source 1400 Ta = 25°C 1400 ID = −0.4 A 1600 Common Source RDS (ON) – Ta Drain-Source on resistance RDS (ON) (mΩ) 1200 1000 800 600 400 200 0 0 −10 V VGS = −3.3 V −4 V Drain-Source on resistance RDS (ON) (mΩ) 1200 1000 800 600 400 200 0 −25 VGS = −3.3 V −4 V −10 V −0.5 −1 −1.5 −2 0 25 50 75 100 125 150 Drain current ID (A) Ambient temperature Ta (°C) |Yfs| – ID 10 Common Source VDS = −5 V 3 Ta = 25°C −2 Common Source VGS = 0 −1.5 Ta = 25°C IDR – VDS Forward transfer admittance |Yfs| (S) 1 Drain reverse current IDR (A) D IDR S G −1 0.3 0.1 −0.5 0.03 0.01 −0.01 −0.03 −0.1 −0.3 −1 −3 −10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain current ID (A) Drain-Source voltage VDS (V) 3 2007-11-01 SSM6J07FU C – VDS 1000 500 500 300 toff 100 50 Ciss t – ID Common Source VDD = −15 V VGS = 0~−4 V Rg = 10 Ω Ta = 25°C (pF) Switching time t (ns) Capacitance C 100 tf Coss Common Source 50 30 ton 10 tr 5 −0.01 −0.03 −0.1 −0.3 −1 10 VGS = 0 V f = 1 MHz Ta = 25°C 5 −0.1 −0.5 −1 −5 −10 Crss −50 −100 Drain-Source voltage VDS (V) Drain current ID (A) Safe Operating Area −10 350 PD – Ta Mounted on FR4 board 300 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) Figure 1 ID max (pulse) * −1 10 ms ID max (continuous) 1 ms (mW) Power dissipation PD 250 200 150 100 50 0 0 (A) 100 ms Drain current ID −0.1 DC operation Ta = 25°C Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.32 mm × 6) Figure 1 20 40 60 80 100 120 140 160 −0.01 * Single non-repetitive pulse Ta = 25°C Curves must be derated linearly with increase in Ambient temperature Ta (°C) temperature. −0.001 −0.1 VDSS max −10 −100 −1 Drain-Source voltage VDS (V) 4 2007-11-01 SSM6J07FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01