TLP7830(TL,E

TLP7830 Photocouplers Optically Isolated Delta-Sigma Modulator TLP7830 1. Applications • Motor phase and rail current sensing • Power inverter current and voltage sensing 2. General The TLP7830 is a 1-bit, second-order delta-sigma (∆-∑) modulator converts an analog input signal into a highspeed data stream with galvanic isolation based on optical coupling technology. 3. Features (1) Output clock frequency: 10 MHz (typ.) (2) 16 bits resolution no missing codes [ENOB: 12 bits (typ.)] (3) Integral non-linearity: 4 LSB (typ.) (4) Input offset voltage: 0.6 mV (typ.) (5) Operating temperature range: -40 to 105  (6) Common-mode transient immunity: 15 kV/µs (min) (7) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When a VDE approved type is needed, please designate the Option (D4) (D4). Start of commercial production ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2016-01 2020-06-25 Rev.9.0 TLP7830 4. Packaging and Pin Assignment 11-6B1A 4.1. Pin Assignment Pin No. Symbol Description 1 VDD1 Input side supply voltage 2 VIN+ Positive input 3 VIN- Negative input 4 GND1 Input side ground 5 GND2 Output side ground 6 MDAT Modulator data output 7 MCLK Modulator clock output 8 VDD2 Output side supply voltage 5. Internal Circuit (Note) Note: A 0.1-µF bypass capacitor must be connected between 1 and 4 pins and between 5 and 8 pins. 6. Principle of Operation 6.1. Mechanical Parameters Characteristics Size Unit Height 2.3 (max) mm Creepage distances 8.0 (min) Clearance 8.0 (min) Internal isolation thickness 0.4 (min) ©2016-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-06-25 Rev.9.0 TLP7830 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Supply voltages Note Rating Unit VDD1, VDD2 -0.5 to 6 V Steady-state input voltages VIN+, VIN- -0.5 to VDD1 + 0.5 V Two-second transient input voltages VIN+, VIN- -6 to VDD1 + 0.5 V PD 72 mW ∆PD/∆Ta -5.0 mW/ MCLK, MDAT -0.5 to 6 V Input power dissipation Input power dissipation derating (Ta ≥ 110.6) Digital output voltage Output power dissipation PO 48 mW ∆PO/∆Ta -5.0 mW/ Operating temperature Topr -40 to 105  Storage temperature Tstg -55 to 125  Output power dissipation derating (Ta ≥ 115.4) Lead soldering temperature Isolation voltage (10 s) Tsol (Note 1) 260  (AC, 60 s, R.H. ≤ 60 %) BVS (Note 2) 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Ceramic capacitors (0.1 µF) should be connected between 1 and 4 pins and between 5 and 8 pins to stabilize the operation. Otherwise, this photocoupler may not switch properly. The bypass capacitors should be placed as close as possible to each pin. Note 1: ≥ 2 mm below seating plane. Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input side supply voltage VDD1 4.5 5 5.5 V Output side supply voltage VDD2 3  5.5 V -200  200 mV -40  105  Analog input voltage VIN+, VIN- Ambient temperature Ta (Note 1), (Note 2) Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note 1: FSR = ±320 mV Note 2: When either VIN+ or VIN- or both are equal to or greater than VDD1 - 2 V (e.g., if VDD1 = 5 V, when VIN+ and/or VIN- are equal to or greater than 5 V - 2 V = 3 V), isolation amplifiers go into one of the test modes. Do not raise either VIN+ or VIN- above this voltage to keep the device in functional mode. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-06-25 Rev.9.0 TLP7830 9. Electrical Characteristics 9.1. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 105 , VDD1 = 4.5 to 5.5 V, VDD2 = 3 to 5.5 V, VIN+ = -200 to 200 mV, VIN- = 0 V) Characteristics Symbol Test Condition Ta = -40 to 85  Min Typ. Max Unit -15 4 15 LSB Integral non-linearity INL -25 4 25 Differential non-linearity DNL -0.9 0.5 0.9 Ta = 105  Input offset voltage Input offset voltage drift vs ambient temperature Input offset voltage drift vs input side supply voltage LSB VOS -1.0 0.6 2.0 mV |dVOS/dTa|  1.2 3 µV/ |dVOS/dVDD1|  150  µV/V  320  mV -1 0.1 1 % Internal reference voltage Gain error VREF GE Ta = 25  Ta = -40 to 105  Input common-mode rejection ratio Signal-to-noise ratio CMRRIN SNR VIN+ = 400 mVp-p, 1 kHz sine wave -2 0.1 2  74  dB 68 80  dB 65 75  dB Signal-to-(noise + distortion) ratio SNDR Effective number of bits ENOB  12  bits Total harmonic distortion THD  -78  dB Input side supply current (VDD1) IDD1 VIN+ = 0 V  8.5 12 mA Output side supply current (VDD2) IDD2 VIN+ = 0 V, VDD2 = 3.3 V  4.6 7 mA VIN+ = 0 V, VDD2 = 5 V  4.9 8 Low-level output voltage VOL IOUT = 200 µA  0.03 0.05 V High-level output voltage VOH IOUT = -200 µA, VDD2 = 3.3 V 3.1 3.2  V IOUT = -200 µA, VDD2 = 5 V 4.8 4.9   80  Equivalent input resistance Note: Note: RIN kΩ Tested with a Sinc3 filter with a decimation ratio of 256 (with the decimation filter output configured to 16 bits). All typical values are at VDD1 = 5 V, VDD2 = 5 V, Ta = 25 , unless otherwise noted. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-06-25 Rev.9.0 TLP7830 10. AC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 105 , VDD1 = 4.5 to 5.5 V, VDD2 = 3 to 5.5 V) Characteristics Symbol Output clock frequency fCLK Access time after MCLK rising edge ta Hold time after MCLK rising edge th Common-mode transient immunity CMTI Note: Test Condition Min Typ. Max Unit 8.5 10 11.5 MHz  33 45 ns 10 24  ns 15 20  kV/µs Min Typ. Max Unit CL = 15 pF VCM = 1 kV, Ta = 25  All typical values are at Ta = 25 . CL is approximately 15 pF which includes probe and stray wiring capacitance. 11. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz  1.0  pF Isolation resistance RS (Note 1) VS = 500 V, R.H. ≤ 60 % 1012 1014  Ω (Note 1) AC, 60 s 5000   Vrms Isolation voltage BVS Note Test Condition Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-06-25 Rev.9.0 TLP7830 12. Characteristics Curves (Note) VIN- = 0 V. Tested with a Sinc3 filter with a decimation ratio of 256 (with the decimation filter output configured to 16 bits) Fig. 12.1 VOS - Ta Fig. 12.2 VREF - Ta Fig. 12.3 VIN+ - IIN+ Fig. 12.4 SNR - Ta Fig. 12.5 SNDR - Ta ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-06-25 Rev.9.0 TLP7830 Fig. 12.6 IDD - VIN+ Fig. 12.7 IDD - Ta Fig. 12.8 fCLK - Ta Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-06-25 Rev.9.0 TLP7830 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. • When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. An Example of a Temperature Profile When Lead(Pb)-Free Solder Is Used • When using soldering flow Preheat the device at a temperature of 150  (package surface temperature) for 60 to 120 seconds. Mounting condition of 260  within 10 seconds is recommended. Flow soldering must be performed once. • When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260  or within 3 seconds not exceeding 350  Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage • Avoid storage locations where devices may be exposed to moisture or direct sunlight. • Follow the precautions printed on the packing label of the device for transportation and storage. • Keep the storage location temperature and humidity within a range of 5  to 35  and 45 % to 75 %, respectively. • Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. • Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. • When restoring devices after removal from their packing, use anti-static containers. • Do not allow loads to be applied directly to devices while they are in storage. • If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-06-25 Rev.9.0 TLP7830 14. Land Pattern Dimensions (for reference only) Unit: mm 15. Marking ©2016-2020 Toshiba Electronic Devices & Storage Corporation 9 2020-06-25 Rev.9.0 TLP7830 16. EN 60747-5-5 Option (D4) Specification • Part number: TLP7830 (Note 1) • The following part naming conventions are used for the devices that have been qualified according to option (D4) of EN 60747. Example: TLP7830(D4-TP4,E D4: EN 60747 option TP4: Tape type E: [[G]]/RoHS COMPATIBLE (Note 2) Note 1: Use TOSHIBA standard type number for safety standard application. e.g., TLP7830(D4-TP4,E → TLP7830 Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Fig. 16.1 EN 60747 Insulation Characteristics ©2016-2020 Toshiba Electronic Devices & Storage Corporation 10 2020-06-25 Rev.9.0 TLP7830 Fig. 16.2 Insulation Related Specifications (Note) Note: This photocoupler is suitable for safe electrical isolation only within the safety limit data. Maintenance of the safety data shall be ensured by means of protective circuits. Fig. 16.3 Marking on Packing Fig. 16.4 Marking Example (Note) Note: The above marking is applied to the photocouplers that have been qualified according to option (D4) of EN 60747. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 11 2020-06-25 Rev.9.0 TLP7830 Fig. 16.5 Measurement Procedure ©2016-2020 Toshiba Electronic Devices & Storage Corporation 12 2020-06-25 Rev.9.0 TLP7830 17. Ordering Information When placing an order, please specify the part number, tape type and quantity as shown in the following example. Example) TLP7830(TP4,E 1500 pcs Part number: TLP7830 Tape type: TP4 [[G]]/RoHS COMPATIBLE: E (Note 1) Quantity (must be a multiple of 1500): 1500 pcs Note 1: Please contact your Toshiba sales representative for details on environmental information such as the product's RoHS compatibility. RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 13 2020-06-25 Rev.9.0 TLP7830 Package Dimensions Unit: mm Weight: 0.205 g (typ.) Package Name(s) TOSHIBA: 11-6B1A ©2016-2020 Toshiba Electronic Devices & Storage Corporation 14 2020-06-25 Rev.9.0 TLP7830 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ ©2016-2020 Toshiba Electronic Devices & Storage Corporation 15 2020-06-25 Rev.9.0