CHU2277

CHU2277 W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description The CHU2277 is a W-band monolithic multifunction which integrates a frequency multiplier, a four-stage amplifier and a power divider. The frequency multiplier is based on an active transistor and allows to operate at low input level with a reduced power consumption. This chip provides two outputs at 77GHz, the main one is for the transmission path and the auxiliary one for the receiving mixer (s) LO signal. All the active devices are internally self biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured with the P-HEMT process : 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 16 Output power (dBm) 14 12 10 8 6 4 2 0 75 75,5 76 76,5 77 77,5 78 78,5 79 OUT1 Main Features n n n n n n n n n n W ide operating frequency range Low input power : 5dBm typical High output power (OUT1) Auxiliary output power (OUT2) Low AM noise High temperature range On-chip self biasing Automatic assembly oriented Low DC power consumption Chip size : 4.65 x 1.6 x 0.1mm OUT2 Output frequency (GHz) Typical output power characteristic Pin = 7dBm (on wafer measurement) Main Characteristics Tamb = +25°C Symbol F_in F_out P_out1 P_out2 Input frequency Output frequency Main output power Auxiliary output power Parameter Min 38 76 Typ Max 38.5 77 Unit GHz GHz dBm dBm 13 10 ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. DSCHU22771074 -15-Mar.-01 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU2277 Electrical Characteristics W-band Multiplier/MPA Full operating temperature range, used according to section “Typical assembly and bias configuration” Symbol F_in F_out P_in P_out1 P_out2 Fin_rej S_rej Parameter Input frequency Output frequency Input power Output power (OUT1) (1) Output power (OUT2) (1) fundamental rejection (dBc/Pout1(2Fin)) Spurious rejection (dBc/Pin) 12.75 GHz 25.5 GHz 38.25 GHz 51 GHz 63.75 GHz 76.5 GHz 89.25 GHz 102 GHz Amplitude noise @ 1kHz (SSB) Amplitude noise @ 10kHz (SSB) Amplitude noise @ 100kHz (SSB) Amplitude noise @ 200kHz (SSB) Amplitude noise @ 1MHz (SSB) VSWR at input port (50Ω) Positive supply voltage (2) Positive supply current Negative supply voltage (2) Negative supply current Operating temperature range Min 38 76 0 11 8 45 40 40 35 50 40 15 40 50 Typ Max 38.5 77 12 16 13 Unit GHz GHz dBm dBm dBm dBc dBc 5 13 10 55 50 50 45 60 50 20 50 60 -137 -145 -151 -153 -157 2:1 4.5 180 -4.5 14 An VSWR_in +V +I -V -I Top 4.4 -4.6 -40 -132 -140 -146 -148 -152 2.5:1 4.6 240 -4.4 20 100 dBc/Hz V mA V mA °C (1) Defined on load VSWR ≤1.5:1. (2) Negative supply voltage must be applied at least 1us before positive supply voltage. Ref. DSCHU22771074 -15-Mar.-01 2/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multiplier/MPA Absolute Maximum Ratings (1) Symbol P_in +V -V +I -I Tstg (1) (2) CHU2277 Parameter Input power (2) Positive supply voltage Negative supply voltage Positive supply current Negative supply current Storage temperature range Values 13 5 -5 250 20 -55 to +155 Unit dBm V V mA mA °C Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s Ref. DSCHU22771074 -15-Mar.-01 3/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU2277 Chip Mechanical Data and Pin References W-band Multiplier/MPA 4 5 3 6 2 1 8 9 12 11 10 7 Unit = µm External chip size (layout size + dicing streets) = 4650 x 1600 ± 35 Chip thickness = 100 +/- 10 HF Pads (2, 5,8) = 68 x 118 DC/IF Pads = 100 x 100 Pin number 1,3,4,6,7,9 11 2 5 8 10 12 Pin name Description Ground : should not be bonded. If required, please ask for more information. Ground (optional) Input port Main output Auxiliary output Positive supply voltage Negative supply voltage IN OUT1 OUT2 +V -V Ref. DSCHU22771074 -15-Mar.-01 4/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multiplier/MPA Typical Assembly and Bias Configuration µ-strip line CHU2277 L_out1 4 5 6 L_in 3 2 µ-strip line 1 8 7 9 12 11 10 L_out2 µ-strip line >= 120pF >= 120pF -V DC lines +V This drawing shows an example of assembly and bias configuration. All the transistors are internally self biased. An external capacitor is recommended for the positive and negative supply voltages. For the RF pads the equivalent wire bonding inductance (diameter=25µm) have to be according to the following recommendation. Port IN (2) OUT1 (5) OUT2 (8) Equivalent inductance (nH) L_in = 0.32 L_out1 = 0.32 L_out2 = 0.32 Wire length (mm) (1) 0.4 0.4 0.4 (1) This value is the total length including the necessary loop from pad to pad. For a micro-strip configuration a hole in the substrate is necessary for chip assembly. Ref. DSCHU22771074 -15-Mar.-01 5/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHU2277 W-band Multiplier/MPA As the connections at 77GHz (between MMIC and MMIC or between MMIC and external substrate) are critical, the transition matching network is split into two parts: one on MMIC and one on the external substrate. This choice allows to do, for OUT2 port, a direct connection between MMICs. For a connection to an external substrate a network is proposed on soft substrate for OUT1 and OUT2 ports. The following drawings gives the dimensions for a DUROID substrate (thickness=0.127mm, εr=2.2). Bonding area Proposed matching network for a 50Ω transition between OUT1 and a µstrip line on DUROID substrate Bonding area Proposed matching network for a 50Ω transition between OUT2 and a µstrip line on DUROID substrate. Ref. DSCHU22771074 -15-Mar.-01 6/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 W-band Multiplier/MPA CHU2277 Ordering Information Chip form : CHU2277-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHU22771074 -15-Mar.-01 7/7 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09