2SC4617G-R-AE3-R

UNISONIC TECHNOLOGIES CO., LTD 2SC4617 NPN SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES  * Low Cob Cob=2.0pF (typ) * Complements the UTC 2SA1774  ORDERING INFORMATION Note:  Ordering Number Halogen Free 2SC4617G-x-AB3-R 2SC4617G-x-AE3-R 2SC4617G-x-AL3-R 2SC4617G-x-AN3-R 2SC4617G-x-AQ3-R Pin assignment: E: Emitter B: Base Package SOT-89 SOT-23 SOT-323 SOT-523 SOT-723 C: Collector Pin Assignment 1 2 3 B C E E B C E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Tape Reel Tape Reel MARKING SOT-89 SOT-23 / SOT-323 / SOT-523 / SOT-723 C5G www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-081.G 2SC4617  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current IC 0.15 A SOT-89 500 mW SOT-523 150 mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW SOT-723 125 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance  SYMBOL TEST CONDITIONS BVCBO IC= 50μA BVCEO IC= 1mA BVEBO IE=50μA ICBO VCB=60V IEBO VEB= 7V hFE VCE=6V, IC=1mA VCE(SAT) IC=50mA, IB=5mA fT VCE=12V, IE= -2mA, f=100MHz Cob VCE= 12V, IE= 0A, f=1MHz MIN 60 50 7 TYP MAX 0.1 0.1 560 0.4 120 180 2 3.5 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 120 ~ 270 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 180 ~ 390 S 270 ~ 560 2 of 5 QW-R206-081.G 2SC4617 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS  Grounded Emitter Propagation Characteristics 20 10 5 25°C 2 1 TA=100°C -55°C 0.5 0.2 0.1 100 VCE = 6V TA=25°C Collector Current, IC (mA) Collector Current, IC(mA) 50 Grounded Emitter Output Characteristics (I) 80 0.40mA 60 0.15mA 0.10mA 0.05mA 20 IB = 0A 0 0 Base to Emitter Voltage, VBE (V) 0.35mA 0.30mA 0.25mA 0.20mA 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage, VCE (V) DC Current Gain, hFE Collector Saturation Voltage, VCE(SAT) (V) DC Current Gain, hFE Collector Current, IC (mA) 0.50mA 0.45mA UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-081.G Base Collector Time Constant (ps) Collector Saturation Voltage, VCE(SAT) (V) Collector saturation voltage, VCE(sat) (V)  Collector Output Capacitance, Cob (pF) Emitter Input Capacitance, Cib (pF) Transition Frequency, fT (MHz) 2SC4617 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS QW-R206-081.G 4 of 5 2SC4617 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-081.G