BT151

UTC BT151 SCRs DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SCR SYMBOL 1 A K G 1: CATHODE 2: ANODE TO-220 3: GATE ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive peak off-state voltages BT151-500 BT151-650 BT151-800 Average on-state current (half sine wave; Tmb ≤109 °C) SYMBOL VDRM , VRRM RATING 500* 650* 800 7.5 UNIT V IT(AV) A RMS on-state current (all conduction angles) IT(RMS) 12 A Non-repetitive peak on-state current (half sine wave; Tj = 25 °C prior to surge) A ITSM t = 10 ms 100 t = 8.3 ms 110 I2t for fusing (t = 10 ms) I2t 50 A2s Repetitive rate of rise of on-state current after triggering A/μs dIT /dt 50 (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/ms) Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power (over any 20 ms period) PGM 5 W Average gate power PG(AV) 0.5 W ℃ Storage temperature Tstg -40~150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-007,B UTC BT151 THERMAL RESISTANCES PARAMETER Thermal resistance Junction to mounting base Thermal resistance Junction to ambient In free air SCR SYMBOL Rth j-mb Rth j-a 60 MIN TYP MAX 1.3 UNIT K/W K/W STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current SYMBOL IGT IL IH VT VGT I D , IR CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 2 3 A VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 125 °C VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 °C MIN TYP 2 10 7 1.4 0.6 0.4 0.1 MAX 15 40 20 1.75 1.5 0.5 UNIT mA mA mA V V mA 0.25 DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER Critical rate of rise of off-state voltage SYMBOL dVD /dt CONDITIONS VDM = 67% VDRM(max) ; Tj = 125 °C; exponential waveform; Gate open circuit RGK = 100Ω ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A; dIG /dt = 5 A/µs VD = 67% VDRM(max) ; Tj = 125 °C; ITM = 20 A; VR = 25 V; dITM /dt = 30 A/μs; dVD /dt = 50 V/μs; RGK = 100 Ω MIN TYP MAX UNIT V/µs µs µs 50 200 Gate controlled turn-on time Circuit commutated Turn-off time tgt tq 130 1000 2 70 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-007,B UTC BT151 15 Ptot/W c onduction angle degrees 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 SCR Tmb(max)/C 105.5 a=1.57 1.9 112 120 100 80 60 118.5 α 40 20 125 8 0 1 10 100 1000 Number of half cycles at 50Hz Fig4.Maximum Permissible non-repetitive peak on-state current ITSM ,versus number of cycles,for sinusoidal currents,f=50HZ. T time Tj initial=25 ℃ m ax ITSM/A IT ITSM 2.2 2.8 4 10 5 0 0 4 6 5 7 IT(RMS)/A Fig.1. Maximum on-state dissipation,P tot,versus average on-state current,IT(AV),where a=form factor=IT(RMS)/IT(AV). 1 2 3 1000 ITSM/A 25 20 IT(RMS)/A dIT/dt limit 100 IT ITSM time 10 10us Tj initial=25 ℃ m ax 15 10 5 1ms 10ms 0 0.01 0.1 1 10 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;T m b ≦ 109 ℃ 100us T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current I TSM ,versus pulse width tp , f or sinusoidal currents,tp ≦ 10ms 15 IT(RMS)/A 109℃ 1.6 1.4 1.2 V GT(Tj) V GT(25℃) 10 1 0.8 5 0 -50 0 50 Tmb/C Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature T m b 100 150 0.6 0.4 -50 0 0 50 50 Tj/℃ 100 100 150 150 Fig.6. Normalised gate trigger voltage V GT (T j)/V GT (25 ℃ ),versus junction temperature Tj. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-007,B UTC BT151 IGT(Tj) IGT(25℃) 30 25 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 20 15 10 5 0 IT/A Tj=125℃ Tj=25℃ SCR 3 typ max 0 0.5 1 VT/V 1.5 2 Tj/C Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. IL(Tj) IL(25℃) Fig.10.Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 10 1 0.1 Zth j-mb(K/W) 0.01 0.5 0 -50 0 50 Tj/C Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IH(Tj) IH(25℃) 100 150 0.001 10us 0.1ms 1ms 10ms tp/s PD tp t 0.1s 1s 10s Fig.11.Transient thermal impedance Zthj-mb, versus pulse width tp. dVD/dt(V/us) 3 2.5 2 1.5 1 .5 10000 1000 RGK=100Ω 100 gate open circuit 0 -50 0 10 50 Tj/C 100 150 0 50 Tj/C 100 150 Fig. 9.Normalised holding current IH(Tj)/IH(25℃), versus junction temperature Tj. Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-007,B UTC BT151 SCR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-007,B