MMBTA06G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES  3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number Note:  MMBTA06G-AE3-R Pin Assignment: E: Emitter Package B: Base SOT-23 C: Collector Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-041.F MMBTA06  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Total Device Dissipation(Note 2) Derate Above 25°C RATINGS UNIT 80 V 80 V 4 V 500 mA 350 mW PD 2.8 mW/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4=1.6×1.6×0.06 in  THERMAL DATA PARAMETER Junction to Ambient  SYMBOL VCBO VCEO VEBO IC SYMBOL θJA RATINGS 357 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) Emitter Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain SYMBOL BVCEO BVEBO ICES ICBO hFE TEST CONDITIONS IC=1.0mA, IB=0 IE=100μA, IC=0 VCE=60V, IB=0 VCB=80V, IE=0 80 4 VCE=1V , IC=10mA, VCE=1V , IC=100mA, IC=100mA, IB=10mA VCE=1V , IC=100mA, 100 100 Collector Emitter Saturation Voltage VCE(SAT) Base Emitter on Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note2) fT VCE=2V, IC=10mA, f=100MHz Notes: 1. Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2% 2. fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 100 TYP MAX UNIT 0.1 0.1 V V μA μA 0.25 1.2 V V MHz 2 of 5 QW-R206-041.F MMBTA06  NPN SILICON TRANSISTOR SWITCHING TIME TEST CIRCUITS TURN-ON TIME -1.0V 5.0µs +10V 0 100 VIN tr=3.0ns 5.0µF TURN-OFF TIME +VBB VCC +40V VCC +40V 100 RL OUTPUT VIN RB 5.0µF CS＜6.0pF 100 5.0µs RL OUTPUT RB CS