1N4151W-V_12

1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type designation LL4151. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4151W-V Ordering code 1N4151W-V-GS18 or 1N4151W-V-GS08 Marking A5 Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Peak reverse voltage Average rectified current half wave rectification with resistive load Surge current Power dissipation 1)Valid Test condition Symbol VR VRM Value 50 75 1501) 500 4101) Unit V V mA mA mW f ≥ 50 Hz t < 1 s and Tj = 25 °C IF(AV) IFSM Ptot provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 450 1) 150 - 65 to 150 Unit K/W °C °C Valid provided that electrodes are kept at ambient temperature. Document Number 85721 Rev. 1.3, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N4151W-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Reverse breakdown voltage Diode capacitance Test condition IF = 50 mA V R = 50 V VR = 20 V, Tj = 150 °C IR = 5 µA (pulsed) VF = VR = 0 V IF = 10 mA to IR = 10 mA to IR = 1 mA IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Symbol VF IR IR V(BR) CD trr trr 75 2 4 2 Min. Typ. Max. 1.0 50 50 Unit V nA μA V pF ns ns Reverse recovery time Typical Characteristics Tamb = 25 °C unless otherwise specified 100 T j = 100 ° C Ptot - Admissible Power Dissipation (mW) 1000 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature (°C) I F - Forward Current (mA) 10 25 ° C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18742 V F - Forward Voltage (V) 18743 Figure 1. Forward Current vs. Forward Voltage Figure 3. Admissible Power Dissipation vs. Ambient Temperature 10000 rf - Dynamic Forward Resistance (Ω) T j = 25 ° C f = 1 kHz 1000 CD (VR)/CD (0 V) - Relative Capacitance (pF) 1.1 1.0 0.9 T j = 25 ° C f = 1 MHz 100 10 0.8 0.7 0 18664 1 0.01 18662 0.1 1 10 IF - Forward Current (mA) 100 2 4 6 8 10 VR - Reverse Voltage (V) Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 4. Relative Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85721 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.3, 17-Aug-10 1N4151W-V Vishay Semiconductors 10000 I R - Leakage Current (nA) 1000 100 10 VR = 50 V 1 0 20 18744 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature (°C) Figure 5. Leakage Current vs. Junction Temperature 100 I I FRM - Admissible Repetitive Peak Forward Current (A) ν = t p /T tp I FRM T = 1/f p 10 ν= 0 0.1 0.2 t T 1 0.5 18709 10 -5 10 -4 10 -3 10 -2 tp - Pulse Length (s) 10 -1 1 10 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Document Number 85721 Rev. 1.3, 17-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 1N4151W-V Vishay Semiconductors Package Dimensions in millimeters (inches): SOD-123 0.1 (0.004) max. 1.35 (0.053) 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 0.15 (0.006) 0.10 (0.004) 1 (0.039) 0.2 (0.008) 0° to Mounting Pad Layout 0.85 (0.033) 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 3.85 (0.152) 3.55 (0.140) 1.40 (0.055) 1.7 (0.067) 2.5 (0.098) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85721 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.3, 17-Aug-10 0.85 (0.033) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000