31DQ09G-M3

VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long termreliability C-16 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS DO-201AD (C-16) 3.3 A 90 V, 100 V See Electrical table 3.0 mA at 125 °C 150 °C Single die 3.0 mJ • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for commercial level • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-31DQ..G... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ tp = 5 μs sine 3 Apk, TJ = 25 °C CHARACTERISTICS Rectangular waveform VALUES 3.3 90/100 370 0.85 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM 90 90 100 100 V VS-31DQ09G VS-31DQ09G-M3 VS-31DQ10G VS-31DQ10G-M3 UNITS ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 4 Maximum peak one cycle non-repetitive surge current, TJ = 25 °C See fig. 6 Non-repetitive avalanche energy Repetitive avalanche current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 53.4 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM applied VALUES 3.3 370 60 3.0 0.5 mJ A A UNITS TJ = 25 °C, IAS = 1 A, 18 μs square pulse Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Revision: 19-Sep-11 Document Number: 93322 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 3A Maximum forward voltage drop See fig. 1 VFM (1) 6A 3A 6A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of charge Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) CT LS dV/dt TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR VALUES 0.85 0.97 0.69 0.80 0.1 3 110 9.0 10 000 mA pF nH V/μs V UNITS VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to ambient Typical thermal resistance, junction to lead Approximate weight SYMBOL TJ, TStg RthJA RthJL DC operation Without cooling fin DC operation TEST CONDITIONS VALUES - 40 to 150 80 °C/W 34 1.2 0.042 Case style C-16 31DQ09G 31DQ10G g oz. UNITS °C Marking device Revision: 19-Sep-11 Document Number: 93322 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com Vishay Semiconductors Allowable Lead Temperature (°C) 150 IF - Instantaneous Forward Current (A) 10 120 DC 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 90 60 Square wave (D = 0.50) 80 % Rated VR applied 30 see note (1) 0 0 1 2 3 4 5 0.1 0 0.3 0.6 0.9 1.2 93322_01 VFM - Forward Voltage Drop (V) 93322_04 Fig. 1 - Maximum Forward Voltage Drop Characteristics IF(AV) - Average Forward Current (A) Fig. 4 - Maximum Allowable Lead Temperature vs. Average Forward Current 4 10 TJ = 150 °C IR - Reverse Current (mA) 1 0.1 0.01 0.001 0.0001 0 0 Average Power Loss (W) TJ = 125 °C 3 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC RMS Limit 2 1 TJ = 25 °C 0 20 40 60 80 100 93322_05 0 1 2 3 4 5 93322_02 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) 1000 1000 CT - Junction Capacitance (pF) TJ = 25 °C 100 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 0 93322_03 10 10 100 1000 10 000 40 80 120 160 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 93322_06 tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Non-Repetitive Surge Current (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 19-Sep-11 Document Number: 93322 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3 www.vishay.com ORDERING INFORMATION TABLE Vishay Semiconductors Device code VS1 31 2 D 3 Q 4 10 5 G 6 TR 7 8 1 2 3 4 5 6 7 8 - Vishay Semiconductors product 31 = Current Rating, 3.3 A D = DO-201 (C-16) Q = Schottky Q.. series 10 = Voltage ratings G = Schottky generation None = Bulk package TR = Tape and reel package Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free 09 = 90 V 10 = 100 V ORDERING INFORMATION (Example) PREFERRED P/N VS-31DQ09G VS-31DQ09GTR VS-31DQ09G-M3 VS-31DQ09GTR-M3 VS-31DQ10G VS-31DQ10GTR VS-31DQ10G-M3 VS-31DQ10GTR-M3 QUANTITY PER T/R 500 1200 500 1200 500 1200 500 1200 MINIMUM ORDER QUANTITY 500 1200 500 1200 500 1200 500 1200 PACKAGING DESCRIPTION Bulk Tape and reel Bulk Tape and reel Bulk Tape and reel Bulk Tape and reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model www.vishay.com/doc?95242 www.vishay.com/doc?95304 www.vishay.com/doc?95338 www.vishay.com/doc?95300 Revision: 19-Sep-11 Document Number: 93322 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-201AD (C-16) DIMENSIONS in millimeters (inches) Ø 5.8 (0.23) MAX. Cathode band 21.0 (0.83) MIN. (2 places) 21.0 (0.83) MIN. (2 places) 10.0 (0.39) MAX. 10.0 (0.39) MAX. 2.54 (0.100) MAX. Flash (2 places) Ø 1.40 (0.055) Ø 1.20 (0.047) (2 places) Ø 1.40 (0.055) Ø 1.20 (0.047) (2 places) Ø 5.8 (0.23) MAX. Revision: 29-Aug-11 Document Number: 95242 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000