80EPS08

80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A DESCRIPTION/FEATURES Base cathode 4, 2 The 80EPS..PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level. Compliant to RoHS directive 2002/95/EC. TO-247AC 1 Anode 3 Anode PRODUCT SUMMARY VF at 80 A IFSM VRRM 1.17 V 1450 A 800/1200 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF TJ 80 A, TJ = 25 °C CHARACTERISTICS Sinusoidal waveform Range VALUES 80 800/1200 1450 1.17 - 40 to 150 UNITS A V A V °C VOLTAGE RATINGS PART NUMBER 80EPS08PbF 80EPS12PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1300 IRRM AT 150 °C mA 1 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2 √ t TEST CONDITIONS TC = 100 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 80 1450 1500 10 500 14 000 105 000 A2 s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94347 Revision: 07-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VR = Rated VRRM VALUES 1.17 3.17 0.73 0.1 1.0 UNITS V mΩ V mA THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style TO-247AC (JEDEC) SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, flat, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.35 40 0.2 6 0.21 6 (5) 12 (10) 80EPS08 80EPS12 g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94347 Revision: 07-Jul-09 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products 150 160 Maximum Allowable Case Temperture (°C) 140 130 120 110 Maximum Average Forward Power Loss (W) 80EPS.. Series RthJC (DC) = 0.35 K/W 140 120 100 80 60 40 20 0 Ø Conduction angle DC 180° 120° 90° 60° 30° RMS limit Ø 30° 100 90 80 60° 90° 120° 180° Conduction period 80EPS.. Series TJ = 150 °C 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 1600 80EPS.. Series RthJC (DC) = 0.35 K/W Maximum Allowable Case Temperature (°C) 140 130 120 110 100 90 1400 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Peak Half Sine Wave Forward Current (A) Ø 1200 1000 800 600 80EPS.. Series Conduction period 30° 60° 90° 120° 180° DC 400 0 20 40 60 80 100 120 140 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitudr Halfe Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current 120 Maximum Average Forward Power Loss (W) 100 80 60 Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° RMS limit 1800 1600 1400 1200 1000 800 600 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø 40 20 0 Conduction angle 80EPS.. Series TJ = 150 °C 80EPS.. Series 400 0 10 20 30 40 50 60 70 80 90 0.01 0.1 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94347 Revision: 07-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 80EPS..PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 80 A Instantaneous Forward Current (A) 1000 100 TJ = 25 °C 10 TJ = 150 °C 80EPS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 80EPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94347 Revision: 07-Jul-09 80EPS..PbF High Voltage Series Input Rectifier Diode, 80 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 80 1 1 2 3 4 5 6 - E 2 P 3 S 4 12 5 PbF 6 Current rating (80 = 80 A) Circuit configuration: E = Single diode Package: P = TO-247AC Type of silicon: S = Standard recovery rectifier Voltage ratings None = Standard production PbF = Lead (Pb)-free 08 = 800 V 12 = 1200 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95223 www.vishay.com/doc?95226 Document Number: 94347 Revision: 07-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1