AS3BJ
Vishay General Semiconductor
Avalanche Surface Mount Rectifiers
FEATURES
• Low profile package • Ideal for automated placement • Glass passivated chip junction • Controlled avalanche characteristics • Low leakage current • High forward surge capability • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
3.0 A 600 V 90 A 20 mJ 0.86 V 175 °C
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 3.0 A (TA = 125 °C) TJ max.
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave, non-repetitive, TJ = 25 °C Non-repetitive avalanche energy at TJ = 25 °C Operating junction and storage temperature range Notes (1) Mounted on 14 mm x 14 mm x 2 areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended 1.52 mm x 2.18 mm x 2 pad areas IAS = 2.0 A max. IAS = 1.0 A typ. VRRM IF (1) IF (2) IFSM EAS TJ, TSTG SYMBOL AS3BJ A3J 600 3.0 A 2.0 90 20 mJ 30 - 55 to + 175 °C A V UNIT
Document Number: 89377 Revision: 31-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS3BJ
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS IF = 1.5 A Instantaneous forward voltage IF = 3.0 A IF = 1.5 A IF = 3.0 A Reverse current Typical reverse recovery time Typical junction capacitance per diode VR = 600 V TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) trr CJ SYMBOL TYP. 0.90 0.98 0.78 0.86 0.5 40 1.5 40 MAX. 1.05 0.95 20 150 μA μs pF V UNIT
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Rated VR = 4.0 V, 1 MHz
Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER Typical thermal resistance SYMBOL RJA
(1)
AS3BJ 100 14
UNIT °C/W
RJM (2)
(1) (2)
Notes Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient Units mounted on PCB with 14 mm x 14 mm x 2 areas, 1 oz. copper pad areas; RJM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N AS3BJ-M3/52T AS3BJ-M3/5BT AS3BJHM3/52T (1) AS3BJHM3/5BT
(1) (1)
UNIT WEIGHT (g) 0.096 0.096 0.096 0.096
PREFERRED PACKAGE CODE 52T 5BT 52T 5BT
BASE QUANTITY 750 3200 750 3200
DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel
Note AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.6 3.2 TM = 140 °C 3.2 2.8 D = 0.3 D = 0.5 D = 0.2 D = 0.8
DC Forward Current (A)
2.8 2.4 TA = 25 °C 2.0 Free air 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 TM Measured at the Terminal
Average Power Loss (W)
2.4 2.0 1.6 1.2 T 0.8 0.4 D = tp/T 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 tp D = 1.0 D = 0.1
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2
Fig. 2 - Forward Power Loss Characteristics
For technical questions within your region, please contact one of the following: Document Number: 89377 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AS3BJ
Vishay General Semiconductor
100
1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100
Instantaneous Forward Current (A)
TA = 175 °C 10 TA = 125 °C
1
TA = 75 °C
Junction Capacitance (pF)
10
TA = 25 °C 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1 0.1 1 10 100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000 TJ = 175 °C 100 TJ = 125 °C 10 TJ = 75 °C 1 TJ = 25 °C 0.1 10 20 30 40 50 60 70 80 90 100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
Free Air Junction to Ambient
100
10
1 0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB) Cathode Band Mounting Pad Layout
0.085 (2.159) MAX. 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21)
0.060 (1.52) MIN. 0.220 (5.59) REF.
Document Number: 89377 Revision: 31-May-11
For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000 Revision: 11-Mar-11
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