BAV302

BAV300 / 301 / 302 / 303 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • • • • • Silicon Epitaxial Planar Diodes Saving space e2 Hermetic sealed parts Fits onto SOD323 / SOT23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612315 Applications • General purposes Mechanical Data Case: MicroMELF Glass case Weight: approx. 12 mg Cathode Band Color: Black Packaging Codes/Options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BAV300 BAV301 BAV302 BAV303 Type differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering code BAV300-TR3 or BAV300-TR BAV301-TR3 or BAV301-TR BAV302-TR3 or BAV302-TR BAV303-TR3 or BAV303-TR Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak reverse voltage Test condition Part BAV300 BAV301 BAV302 BAV303 Reverse voltage BAV300 BAV301 BAV302 BAV303 Forward continuous current Peak forward surge current Forward peak current tp = 1 s, Tj = 25 °C f = 50 Hz Symbol VRRM VRRM VRRM VRRM VR VR VR VR IF IFSM IFM Value 60 120 200 250 50 100 150 200 250 1 625 Unit V V V V V V V V mA A mA Document Number 85545 Rev. 1.9, 07-Mar-06 www.vishay.com 1 BAV300 / 301 / 302 / 303 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Test condition mounted on epoxy-glass hard tissue, Fig. 4 35 µm copper clad, 0.9 mm2 copper area per electrode Junction temperature Storage temperature range Tj Tstg 175 - 65 to + 175 °C °C Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 100 mA V R = 50 V VR = 100 V VR = 150 V VR = 200 V Tj = 100 °C, VR = 50 V Tj = 100 °C, VR = 100 V Tj = 100 °C, VR = 150V Tj = 100 °C, VR = 200V Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 Diode capacitance Differential forward resistance Reverse recovery time VR = 0, f = 1 MHz IF = 10 mA IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω Part Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr 60 120 200 250 1.5 5 50 Min Typ. Max 1000 100 100 100 100 15 15 15 15 Unit mV nA nA nA nA µA µA µA µA V V V V pF Ω ns www.vishay.com 2 Document Number 85545 Rev. 1.9, 07-Mar-06 BAV300 / 301 / 302 / 303 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 100 Scattering Limit 10 25 0.152 0.71 1.3 1.27 I R - Reverse Current (µA) 9.9 0.355 1 VR = VRRM 10 0.1 0.01 0 40 80 120 2.5 160 200 95 10329 24 94 9084 Tj - Junction Temperature (°C) Figure 1. Reverse Current vs. Junction Temperature Figure 4. Board for RthJA definition (in mm) 1000 Tj = 25 °C I F - Forward Current (mA) 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage rf - Differential Forward Resistance (Ω) 1000 100 Tj = 25 °C 10 1 0.1 1 10 100 94 9089 I F - Forward Current (mA) Figure 3. Differential Forward Resistance vs. Forward Current Document Number 85545 Rev. 1.9, 07-Mar-06 www.vishay.com 3 BAV300 / 301 / 302 / 303 Vishay Semiconductors Package Dimensions in mm (Inches) surface plan 0.6 (0.024) ISO Method E Cathode indification 1 (0.039) surface plan 2.0 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) 1.2 (0.047) 1.1 (0.043) > R 2.5 (R 0.098) Glass G < 1. 35 la (0. ss 05 3 Glass case MicroMELF ) Reflow Soldering 1.2 (0.047) 1.4 (0.055) Wave Soldering 0.8 (0.031) 0.8 (0.031) 2.4 (0.094) Document No.: 6.560-5007.01-4 Rev. 11, 07.Feb.2005 9612072 0.8 (0.031) 0.9 (0.035) 1.0 (0.039) 2.8 (0.110) 0.9 (0.035) www.vishay.com 4 Document Number 85545 Rev. 1.9, 07-Mar-06 BAV300 / 301 / 302 / 303 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85545 Rev. 1.9, 07-Mar-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1