BZT52C51-V

BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Power Zener Diodes • These diodes are also available in other e3 case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT23 case with type designation DZ23 series. • The Zener voltages are graded according to the international E 24 standard. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Zener current see table " Characteristics " Power dissipation Power dissipation 1) 2) Test condition Symbol Value Unit Ptot Ptot 2 5002) 410 1) mW mW Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA TJ TS Value 3001) 150 - 65 to + 150 Unit °C/W °C °C Valid provided that electrodes are kept at ambient temperature Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 1 BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range1) VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 Dynamic Resistance Test Current IZT1 Temp. Coefficient @ IZT1 Reverse Voltage V R @ IR = 100 nA, V Admissible Zener Current4) IZ @ Tamb = 45 °C, mA IZ @ Tamb = 25 °C, V min BZT52C2V4-V BZT52C2V7-V BZT52C3V0-V BZT52C3V3-V BZT52C3V6-V BZT52C3V9-V BZT52C4V3-V BZT52C4V7-V BZT52C5V1-V BZT52C5V6-V BZT52C6V2-V BZT52C6V8-V BZT52C7V5-V BZT52C8V2-V BZT52C9V1-V BZT52C10-V BZT52C11-V BZT52C12-V BZT52C13-V BZT52C15-V BZT52C16-V BZT52C18-V BZT52C20-V BZT52C22-V BZT52C24-V BZT52C27-V BZT52C30-V BZT52C33-V BZT52C36-V BZT52C39-V BZT52C43-V BZT52C47-V BZT52C51-V BZT52C56-V BZT52C62-V BZT52C68-V BZT52C75-V W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 85 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) < 135 (2) Ω mA αVZ (10-4/°C) 600 < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 < 1000 (3) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 - 9 to - 4 - 9 to - 4 - 9 to - 3 - 8 to - 3 - 8 to - 3 - 7 to - 3 - 6 to - 1 - 5 to +2 - 3 to +4 - 2 to +6 - 1 to +7 +2 to +7 +3 to +7 +4 to +7 +5 to +8 +5 to +8 +5 to +9 +6 to +9 +7 to +9 +7 to +9 +8 to +9.5 +8 to +9.5 +8 to +10 +8 to +10 +8 to +10 +8 to +10 +8 to +10 +8 to +10 +8 to +10 +10 to +12 +10 to +12 +10 to +12 +10 to +12 typ. +10 (2) > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 - 113 98 92 85 77 71 64 56 50 45 41 37 34 30 28 25 23 21 19 17 15 14 13 11 10 9 8 8 7 6 5 5 - 134 118 109 100 92 84 76 67 59 54 49 44 40 36 33 30 28 25 23 20 18 17 16 13 12 10 9 9 8 7 6 6 - < 150(2) < 200 (2) < 1000(3) < 1000 (3) typ. +10(2) typ. +10 (2) < 250(2) < 1500(3) typ. +10(2) IZT1 = 5 mA, IZT2 = 1 mA (1) (2) (3) (4) Measured with pulses Tp = 5 ms = IZT1 = 2.5 mA = IZT2 = 0.5 mA Valid provided that electrodes are kept at ambient temperature. www.vishay.com 2 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range1) VZ @ IZT1 rzj @ IZT1 rzj @ IZT2 Dynamic Resistance Test Current IZT1 Temp. Coefficient @ IZT1 Reverse Voltage V R @ IR = 100 nA, V Admissible Zener Current4) IZ @ Tamb = 45 °C, mA IZ @ Tamb = 25 °C, V min BZT52B2V4-V BZT52B2V7-V BZT52B3V0-V BZT52B3V3-V BZT52B3V6-V BZT52B3V9-V BZT52B4V3-V BZT52B4V7-V BZT52B5V1-V BZT52B5V6-V BZT52B6V2-V BZT52B6V8-V BZT52B7V5-V BZT52B8V2-V BZT52B9V1-V BZT52B10-V BZT52B11-V BZT52B12-V BZT52B13-V BZT52B15-V BZT52B16-V BZT52B18-V BZT52B20-V BZT52B22-V BZT52B24-V BZT52B27-V BZT52B30-V BZT52B33-V BZT52B36-V BZT52B39-V BZT52B43-V BZT52B47-V BZT52B51-V BZT52B56-V BZT52B62-V BZT52B68-V BZT52B75-V W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WK WL WM WN WO WP WR WS WT WU WW WX WY WZ X1 X2 X3 X4 X5 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 54.9 60.8 66.6 73.5 max 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 57.1 63.2 69.4 76.5 85 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) < 135 (2) Ω mA αVZ (10-4/°C) 600 < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 < 1000 (3) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 - 9 to - 4 - 9 to - 4 - 9 to - 3 - 8 to - 3 - 8 to - 3 - 7 to - 3 - 6 to - 1 - 5 to + 2 - 3 to + 4 - 2 to + 6 - 1 to + 7 + 2 to + 7 + 3 to + 7 + 4 to + 7 + 5 to + 8 + 5 to + 8 + 5 to + 9 + 6 to + 9 + 7 to + 9 + 7 to + 9 + 8 to + 9.5 + 8 to + 9.5 + 8 to + 10 + 8 to + 10 + 8 to + 10 + 8 to + 10 + 8 to + 10 + 8 to + 10 + 8 to + 10 + 10 to + 12 + 10 to + 12 + 10 to + 12 + 10 to + 12 typ. + 10 (2) > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 - 113 98 92 85 77 71 64 56 50 45 41 37 34 30 28 25 23 21 19 17 15 14 13 11 10 9 8 8 7 6 5 5 - 134 118 109 100 92 84 76 67 59 54 49 44 40 36 33 30 28 25 23 20 18 17 16 13 12 10 9 9 8 7 6 6 - < 150(2) < 200 (2) < 1000(3) < 1000 (3) typ. + 10(2) typ. + 10 (2) < 250(2) < 1500(3) typ. + 10(2) IZT1 = 5 mA, IZT2 = 1 mA 1) 2) 3) 4) Measured with pulses Tp = 5 ms = IZT1 = 2.5 mA = IZT2 = 0.5 mA Valid provided that electrodes are kept at ambient temperature. Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 3 BZT52-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18114 18117 Figure 1. Forward characteristics Figure 4. Dynamic Resistance vs. Zener Current 18888 18118 Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Capacitance vs. Zener Voltage °C 18116 18119 Figure 3. Pulse Thermal Resistance vs. Pulse Duration Figure 6. Dynamic Resistance vs. Zener Current www.vishay.com 4 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors °C 18120 18135 ,= Figure 7. Dynamic Resistance vs. Zener Current Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage °C/W 18121 18124 Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C 18122 18136 Figure 9. Dynamic Resistance vs. Zener Voltage Figure 12. Temperature Dependence of Zener Voltage vs. Zener Voltage Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 5 BZT52-V-Series Vishay Semiconductors 18158 Figure 13. Change of Zener Voltage vs. Junction Temperature 18159 Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage 18160 Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors 18111 Figure 16. Breakdown Characteristics 18112 Figure 17. Breakdown Characteristics Document Number 85760 Rev. 1.5, 21-Apr-05 www.vishay.com 7 BZT52-V-Series Vishay Semiconductors 18157 Figure 18. Breakdown Characteristics Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.1 (0.004) max. 0.55 (0.022) 0.25 (0.010) min. 0.15 (0.006) max. Mounting Pad Layout ISO Method E Cathode Band 3.85 (0.152) 2.85 (0.112) 2.55 (0.100) 3.55 (0.140) 1.40 (0.055) 1.70 (0.067) 1.40 (0.055) 0.72 (0.028) 2.40 (0.094) 17432 www.vishay.com 8 Document Number 85760 Rev. 1.5, 21-Apr-05 BZT52-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1