FA57SA50LCP

FA57SA50LCP Vishay Semiconductors Power MOSFET, 57 A FEATURES • • • • • • • • • • • • 500 V 0.08 Ω 57 A Modules - MOSFET SOT-227 SOT-227 PRODUCT SUMMARY VDSS RDS(on) ID Type Package Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC Designed for industrial level DESCRIPTION Third Generation Power MOSFETs from Vishay HPP provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Linear derating factor Gate to source voltage Single pulse avalanche energy Avalanche current Repetitive avalanche energy Peak diode recovery dV/dt Operating junction and storage temperature range Insulation withstand voltage (AC-RMS) Mounting torque VGS EAS (2) IAR (1) EAR (1) SYMBOL ID IDM (1) PD TEST CONDITIONS TC = 25 °C TC = 100 °C TC = 25 °C MAX. 57 36 228 625 5.0 ± 20 725 57 62.5 10 - 55 to + 150 2.5 UNITS A W W/°C V mJ A mJ V/ns °C kV Nm dV/dt (3) TJ, TStg VISO M4 screw 1.3 Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Starting T = 25 °C, L = 446 μH, R = 25 Ω, I J g AS = 57 A (see fig. 12) (3) I SD ≤ 57 A, dI/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150 °C Document Number: 94548 Revision: 12-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 FA57SA50LCP Vishay Semiconductors THERMAL RESISTANCE PARAMETER Junction to case Case to sink, flat, greased surface SYMBOL RthJC RthCS TYP. 0.05 MAX. 0.20 UNITS °C/W Power MOSFET, 57 A ELECTRICAL CHARACTERISTCS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage Gate to source reverse leakage Total gate charge Gate to source charge Gate to drain ("Miller") charge Turn-on delay time Rise time Turn-off delay time Fall time Internal source inductance Input capacitance Output capacitance Reverse transfer capacitance Note (1) Pulse width ≤ 300 μs, duty cycle ≤ 2 % SYMBOL V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss (1) TEST CONDITIONS VGS = 0 V, ID = 1.0 mA Reference to 25 °C, ID = 1 mA VGS = 10 V, ID = 34 A VDS = VGS, ID = 250 μA VDS = 50 V, ID = 34 A VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 20 V VGS = - 20 V ID = 57 A VDS = 400 V VGS = 10 V; see fig. 6 and 13 (1) VDD = 250 V ID = 57 A Rg = 2.0 Ω (internal) RD = 4.3 Ω, see fig. 10 (1) Between lead, and center of die contact VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 5 MIN. 500 2.0 43 - TYP. 0.62 225 51 98 32 152 108 118 5.0 10 000 1500 50 MAX. 0.08 4.0 50 500 200 - 200 338 77 147 - UNITS V V/°C Ω V S μA VGS(th) nA nC ns nH pF SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge Forward turn-on time (1) SYMBOL IS ISM (1) VSD trr Qrr ton (2) TEST CONDITIONS D MIN. - TYP. 901 15 MAX. 57 UNITS MOSFET symbol showing the integral reverse p-n junction diode. G S A 228 1.3 1351 23 V ns μC TJ = 25 °C, IS = 57 A, VGS = 0 V TJ = 25 °C, IF = 57 A, dI/dt = 100 A/μs (2) Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Pulse width ≤ 300 μs, duty cycle ≤ 2 % www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94548 Revision: 12-May-10 FA57SA50LCP Power MOSFET, 57 A Vishay Semiconductors ID = 57A 1000 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 3.0 2.5 2.0 10 1.5 4.5V 1 1.0 0.5 0.1 0.1 20μs PULSE WIDTH TJ = 25 °C 1 10 100 0.0 -60 -40 -20 V GS = 10V 0 20 40 60 80 100 120 140 160 VDS , Drain-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 1000 I D , Drain-to-Source Current (A) 100 4.5V C, Capacitance (pF) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 15000 12000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 9000 6000 10 Coss 3000 1 0.1 20μs PULSE WIDTH TJ = 150 °C 1 10 100 Crss 0 1 10 100 VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 20 I D , Drain-to-Source Current (A) TJ = 150 ° C ID = 57 A VGS , Gate-to-Source Voltage (V) 16 VDS = 400V VDS = 250V VDS = 100V 100 TJ = 25 ° C 10 12 8 1 4 0.1 4 5 6 7 V DS= 50V 20μs PULSE WIDTH 8 9 10 0 0 60 120 180 FOR TEST CIRCUIT SEE FIGURE 13 240 300 360 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage Document Number: 94548 Revision: 12-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 FA57SA50LCP Vishay Semiconductors 1000 Power MOSFET, 57 A 60.0 ISD , Reverse Drain Current (A) 50.0 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 ID , Drain Current (A) 100 TJ = 150 ° C 40.0 30.0 20.0 10.0 0.0 25 50 75 100 125 150 VSD ,Source-to-Drain Voltage (V) TC , Case Temperature ( °C) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 VDS 10us RD VGS 100us 10 1ms D.U.T. + - VDD RG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 10ms 1000 10000 VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 10a - Switching Time Test Circuit VDS 90% 0% GS td(on) tr t d(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94548 Revision: 12-May-10 FA57SA50LCP Power MOSFET, 57 A Vishay Semiconductors 1 Thermal Response (Z thJC ) 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case V(BR)DSS 15 V tp VDS RG 20 V L Driver D.U.T IAS tp 0.01 Ω + - VDD A I AS Fig. 12b - Unclamped Inductive Waveforms Fig. 12a - Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 1500 TOP BOTTOM 1200 ID 25A 35A 57A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Document Number: 94548 Revision: 12-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 FA57SA50LCP Vishay Semiconductors Power MOSFET, 57 A Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF QG 0.3 µF + V - DS 10 V QGS VG QGD VGS 3 mA D.U.T. Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit D.U.T. + 3 - Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + 2 4 + 1 Rg • dV/dt controlled by Rg • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - Device Under Test + VDD Fig. 13c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94548 Revision: 12-May-10 FA57SA50LCP Power MOSFET, 57 A ORDERING INFORMATION TABLE Device code Vishay Semiconductors F 1 1 2 3 4 5 6 7 8 - A 2 57 3 S 4 A 5 50 6 LC 7 P 8 Power MOSFET Generation 3, MOSFET silicon, DBC construction Current rating (57 = 57 A) Single switch (see Circuit Configuration table) SOT-227 Voltage rating (50 = 500 V) Low charge P = Lead (Pb)-free CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) Lead assignment S D 3 2 S G Single switch no diode S G (2) 4 1 S (1-4) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 Document Number: 94548 Revision: 12-May-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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