SI1012R_05

Si1012R/X Vishay Siliconix N-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (mA) 600 500 350 rDS(on) (W) 0.70 @ VGS = 4.5 V 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V D D D D D D TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns Pb-free Available SC-75A or SC-89 G 1 BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation 3 S 2 Top View D APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers ORDERING INFORMATION Part Number Si1012R-T1 Si1012R-T1—E3 (Lead (Pb)-Free) Si1012X-T1 Si1012X-T1—E3 (Lead (Pb)-Free) Package SC−75A (SOT-416) SC-89 (SOT-490) Marking Code C A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg ESD PD 5 secs 20 Steady State "6 Unit V 600 400 1000 275 175 90 275 160 −55 to 150 2000 500 350 mA Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC 75 SC-75 250 150 80 250 140 _C V mW Maximum Power Dissipationb for SC 89 SC-89 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes d. Pulse width limited by maximum junction temperature. e. Surface Mounted on FR4 Board. Document Number: 71166 S-50366—Rev. B, 28-Feb-05 www.vishay.com 1 Si1012R/X Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "4.5 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 600 mA Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 500 m A VGS = 1.8 V, ID = 350 m A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 400 mA IS = 150 mA, VGS = 0 V 700 0.41 0.53 0.70 1.0 0.8 1.2 0.70 0.85 1.25 S V W 0.45 "0.5 0.3 0.9 "1.0 100 5 V mA nA mA mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 47 W V, ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W VDS = 10 V, VGS = 4.5 V, ID = 250 mA 750 75 225 5 5 25 11 ns pC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71166 S-50366—Rev. B, 28-Feb-05 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 1200 TC = −55_C 0.8 I D − Drain Current (A) 1000 ID - Drain Current (mA) VGS = 5 thru 1.8 V 25_C 800 125_C 600 400 200 1V 0.0 0.0 0 0.0 Transfer Characteristics 0.6 0.4 0.2 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4.0 r DS(on) − On-Resistance ( W ) 100 Capacitance C − Capacitance (pF) 3.2 80 Ciss 60 2.4 1.6 VGS = 1.8 V 0.8 VGS = 2.5 V VGS = 4.5 V 0 200 400 600 800 1000 40 Coss 20 Crss 0 4 0.0 0 8 12 16 20 ID − Drain Current (mA) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 250 mA 4 1.60 On-Resistance vs. Junction Temperature rDS(on) − On-Resiistance (Normalized) 1.40 VGS = 4.5 V ID = 600 mA 3 1.20 VGS = 1.8 V ID = 350 mA 2 1.00 1 0.80 0 0.0 0.2 0.4 0.6 0.8 0.60 −50 −25 0 25 50 75 100 125 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Document Number: 71166 S-50366—Rev. B, 28-Feb-05 www.vishay.com 3 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 TJ = 125_C r DS(on) − On-Resistance ( W ) I S − Source Current (mA) 5 On-Resistance vs. Gate-to-Source Voltage 4 ID = 350 mA 3 ID = 200 mA 2 100 TJ = 25_C 10 TJ = −55_C 1 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage Variance vs. Temperature 0.3 0.2 V GS(th) Variance (V) ID = 0.25 mA 0.1 −0.0 −0.1 −0.2 −0.3 −50 IGSS − (mA) 2.0 1.5 1.0 3.0 2.5 IGSS vs. Temperature VGS = 4.5 V 0.5 0.0 −50 −25 0 25 50 75 100 125 −25 0 25 50 75 100 125 TJ − Temperature (_C) TJ − Temperature (_C) BVGSS vs. Temperature BVGSS − Gate-to-Source Breakdown Voltage (V) 7 6 5 4 3 2 1 0 −50 −25 0 25 50 75 100 125 TJ − Temperature (_C) www.vishay.com Document Number: 71166 S-50366—Rev. B, 28-Feb-05 4 Si1012R/X Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 833_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71166.. Document Number: 71166 S-50366—Rev. B, 28-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1