SI1026X

Si1026X New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) 60 rDS(on) (W) 1.40 @ VGS = 10 V VGS(th) (V) 1 to 2.5 ID (mA) 500 FEATURES D D D D D D Low On-Resistance: 1.40 W Low Threshold: 2 V (typ) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ) Low Input and Output Leakage Miniature Package BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Small Board Area APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: E D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (diode conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 S-03518—Rev. A, 23-Apr-01 www.vishay.com TA = 25_C TA = 85_C PD TJ, Tstg ESD TA = 25_C TA = 85_C ID IDM IS 450 280 145 –55 to 150 2000 Symbol VDS VGS 5 secs 60 "20 320 230 –650 Steady State Unit V 305 220 mA 380 250 130 mW _C V 1 Si1026X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "5 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 85_C VDS = 10 V, VGS = 4.5 V ID(on) VDS = 7.5 V, VGS = 10 V VGS = 4.5 V, ID = 200 mA Drain-Source On-Resistancea rDS(on) VGS = 10 V, ID = 500 mA TJ = 125_C Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 200 mA VGS = 0 V, IS = 200 mA 200 1.40 500 800 3.0 1.40 2.50 mS V W mA 60 1 2.5 "150 "50 10 100 nA V Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz VDS =10 V, ID = 250 mA VGS = 4.5 V 600 120 225 30 6 3 pF pC Switchingb, c Turn-On Time Turn-Off Time t(on) t(off) VDD = 30 V, RL = 150 W ID = 200 mA, VGEN = 10 V RG = 10 W 15 ns 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 71434 S-03518—Rev. A, 23-Apr-01 Si1026X New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 6V VGS = 10 thru 7 V 0.8 I D – Drain Current (A) 5V I D – Drain Current (mA) 900 25_C 125_C 1200 TJ = –55_C Vishay Siliconix Transfer Characteristics 0.6 4V 0.4 600 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4.0 3.5 r DS(on) – On-Resistance ( W ) 50 VGS = 0 V f = 1 MHz 40 Capacitance 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 0 0 5 10 15 20 25 VGS = 4.5 V VGS = 10 V C – Capacitance (pF) 30 Ciss 20 Coss 10 Crss ID – Drain Current (mA) VDS – Drain-to-Source Voltage (V) Gate Charge 7 V GS – Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0.0 0.0 –50 VDS = 10 V ID = 250 mA 2.0 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA r DS(on) – On-Resistance ( W ) (Normalized) 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71434 S-03518—Rev. A, 23-Apr-01 www.vishay.com 3 Si1026X Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 VGS = 0 V 4 100 TJ = 125_C r DS(on) – On-Resistance ( W ) I S – Source Current (A) 5 On-Resistance vs. Gate-Source Voltage 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25_C TJ = –55_C 1 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.4 0.2 V GS(th) Variance (V) ID = 250 mA –0.0 –0.2 –0.4 –0.6 –0.8 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71434 S-03518—Rev. A, 23-Apr-01