Si1433DH
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
- 30 0.260 @ VGS = - 4.5 V - 1.6
rDS(on) (W)
0.150 @ VGS = - 10 V
ID (A)
- 2.2
D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switches - Notebook PCs - Servers
SOT-363 SC-70 (6-LEADS)
D 1 6 D Marking Code BE XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1433DH-T1 D 2 5 D
G
3
4
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 1.7 IDM IS - 1.4 1.45 0.75 - 55 to 150 -8 - 0.9 0.95 0.5 W _C - 1.4 A
Symbol
VDS VGS
5 secs
Steady State
- 30 "20
Unit
V
- 2.2
- 1.9
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72323 S-31668—Rev. A, 11-Aug-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
65 105 38
Maximum
85 130 48
Unit
_C/W
1
Si1433DH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 100 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 2.2 A VGS = - 4.5 V, ID = - 1.6 A VDS = - 10 V, ID = - 2.2 A IS = - 1.2 A, VGS = 0 V -4 0.120 0.210 4 - 0.85 - 1.2 0.150 0.260 W S V -1 -3 "100 -1 -5 V nA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A 3.1 1.0 1.6 11 17 18 13 17 26 27 20 ns 5 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8 7 I D - Drain Current (A) 6 5 4V 4 3 2 1 3V 0 0 1 2 3 4 5 0 0 1 VGS = 10 thru 5 V 8
Transfer Characteristics
TC = - 55_C 7 I D - Drain Current (A) 6 5 125_C 4 3 2 1 25_C
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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2
Document Number: 72323 S-31668—Rev. A, 11-Aug-03
Si1433DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.75 350
Vishay Siliconix
Capacitance
r DS(on)- On-Resistance ( W )
0.60 C - Capacitance (pF)
280 Ciss 210
0.45
0.30 VGS = 4.5 V 0.15 VGS = 10 V
140 Coss 70 Crss
0.00 0 1 2 3 4 5 6 7 8
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 VDS = 15 V ID = 2.2 A r DS(on)- On-Resistance ( W ) (Normalized) 8 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 2.2 A
V GS - Gate-to-Source Voltage (V)
6
1.2
4
1.0
2
0.8
0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10 0.70
On-Resistance vs. Gate-to-Source Voltage
r DS(on)- On-Resistance ( W )
0.56
I S - Source Current (A)
TJ = 150_C 1
0.42 ID = 2.2 A 0.28
TJ = 25_C
0.14
0.1 0.00 0.3 0.6 0.9 1.2 1.5
0.00 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Document Number: 72323 S-31668—Rev. A, 11-Aug-03
www.vishay.com
3
Si1433DH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 35
Single Pulse Power, Junction-to-Ambient
0.4 V GS(th) Variance (V)
28
0.2
ID = 250 mA
0.0
Power (W)
21
14
- 0.2
7
- 0.4 - 50
- 25
0
25
50
75
100
125
150
0 0.001
0.01
0.1 Time (sec)
1
10
TJ - Temperature (_C)
Safe Operating Area
10 Limited by rDS(on) I D - Drain Current (A)
1
1 ms
10 ms 0.1 TC = 25_C Single Pulse 100 ms 1s 10 s dc 0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1
PDM
0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2
2. Per Unit Base = RthJA = 105_C/W
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
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4
Document Number: 72323 S-31668—Rev. A, 11-Aug-03
Si1433DH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
0.2 0.1 0.1 0.05 0.02 Single Pulse
0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72323 S-31668—Rev. A, 11-Aug-03
www.vishay.com
5
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