SI1450DH_08

Si1450DH New Product Vishay Siliconix N-Channel 8-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.047 at VGS = 4.5 V 8 0.051 at VGS = 2.5 V 0.058 at VGS = 1.8 V 0.069 at VGS = 1.5 V ID (A)a 4.0a 4.0a 4.0 4.0 a a FEATURES Qg (Typ) • TrenchFET® Power MOSFET: 1.5 V Rated • 100 % Rg Tested RoHS 4.24 nC APPLICATIONS COMPLIANT • Load Switch for Portable Applications - Guaranteed Operation at VGS = 1.5 V Critical for Optimized Design and Space Savings SOT-363 SC-70 (6-LEADS) D D 1 6 D Marking Code AH XX YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free) S N-Channel MOSFET D 2 5 D G G 3 4 S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit 8 ±5 6.04a 4.8a 4.53a 3.62a 15 2.3 1.3c 2.78 1.78 1.56b, c 1.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) A Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Maximum Junction-to-Ambientb, f Maximum Junction-to-Foot (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 125 °C/W. Symbol RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 1 Si1450DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 5 V VDS = 8 V, VGS = 0 V VDS = 8 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 4.0 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.0 A VGS = 1.8 V, ID = 4.0 A VGS = 1.5 V, ID = 1.28 A Forward Transconductancea gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C IS = 2.6 A, VGS = 0 V 0.8 14.3 3.6 6.8 7.5 TC = 25 °C VDD = 4 V, RL = 1.11 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 4 V, VGS = 5 V, ID = 4.0 A VDS = 4 V, VGS = 4.5 V, ID = 4.0 A VDS = 4 V, VGS = 0 V, f = 1 MHz VDS = 4 V, ID = 4.0 A Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 2.6 15 1.2 21.45 5.4 A V ns nC ns 535 120 61 4.7 4.24 1.2 0.810 7.3 8 73 18 5 11 12 110 27 7.5 ns Ω 7.05 6.4 nC pF 15 0.039 0.042 0.048 0.053 15.5 0.047 0.051 0.058 0.069 S Ω 0.3 8 8.32 - 2.7 1 ± 100 1 10 V mV/°C V ns µA A Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 15 25 °C, unless noted 3 I D – Drain Current (A) V GS = 5 thru 2 V 9 V GS = 1.5 V 6 I D – Drain Current (A) 12 2 TC = 125 °C 1 TC = 25 °C TC = - 55 °C 3 V GS = 1 V 0 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 2.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.10 VGS = 1.5 V rDS(on) – On-Resistance ( ) 0.08 VGS = 1.5 V C – Capacitance (pF) 600 800 Transfer Characteristics Ciss 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 400 200 Coss 0.00 0 3 6 9 12 15 0 0 Crss 2 4 6 8 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) rDS(on) vs. Drain Current 5 ID = 4.4 A V GS – Gate-to-Source Voltage (V) 4 rDS(on) – On-Resistance (Normalized) VGS = 6.4 V 3 VDS = 4 V 1.4 1.6 Capacitance VGS = 4.5 V ID = 4.6 A VGS = 2.5 V, ID = 4.4 A VGS = 1.8 V, ID = 4.25 A VGS = 1.5 V 1.0 ID = 1.2 A 1.2 2 1 0.8 0 0 2 3 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge Document Number: 74275 S-62079-Rev. A, 23-Oct-06 On-Resistance vs. Junction Temperature www.vishay.com 3 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 10 rDS(on) – Drain-to-Source On-Resistance (Ω) 0.08 ID = 4.4 A 0.06 TA = 125 °C TJ = 150 °C I S − Source Current (A) 1 0.04 TJ = 25 °C 0.1 TA = 25 °C 0.02 0.01 0 0.4 0.6 0.8 0.2 VSD − Source-to-Drain Voltage (V) 1 0.00 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp 0.8 30 25 ID = 250 µA Power (W) rDS(on) vs. VGS vs. Temperature 0.7 0.6 VGS(th) (V) 20 0.5 15 0.4 10 0.3 5 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ – Temperature (°C) Threshold Voltage 100 *Limited by rDS(on) 10 I D – Drain Current (A) 10 ms 100 ms 1 1s 10 s dc 0.1 Single Pulse Power 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) is specified BVDSS Limited Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 8 3.6 3.2 6 ID – Drain Current (A) 2.8 Power Dissipation (W) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 4 Package Limited 2 TC – Case Temperature (°C) T C – Case Temperature ( C) Current Derating* 2 1 Duty Cycle = 0.5 Power Derating Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74275 S-62079-Rev. A, 23-Oct-06 www.vishay.com 5 Si1450DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74275. www.vishay.com 6 Document Number: 74275 S-62079-Rev. A, 23-Oct-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1