SI1473DH_08

New Product Si1473DH Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) 0.100 at VGS = - 10 V 0.145 at VGS = - 4.5 V ID (A)c - 1.6 - 1.6 Qg (Typ) 4.1 nC FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT SOT-363 SC-70 (6-LEADS) S D 1 6 D Marking Code BJ D 2 5 D Part # Code D P-Channel MOSFET XX YY Lot Traceability and Date Code G G 3 Top View 4 S Ordering Information: Si1473DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a, b TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Currenta, b TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipationa, b TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 20 -1.6c - 1.6c - 1.6a, b, c - 1.6a, b, c - 6.5c - 1.6c - 1.6a, b, c 2.78 1.78 2.5a, b 1a, b - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a, d Symbol t ≤ 5 sec Steady State RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 sec. c. Package limited. d. Maximum under Steady State conditions is 125 °C/W. Document Number: 74438 S-70308-Rev. B, 12-Feb-07 www.vishay.com 1 New Product Si1473DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS ≤ 5 V, VGS = - 10 V VGS = - 10 V, ID = - 2.0 A VGS = - 4.5 V, ID = - 1.6 A VDS = - 10 V, ID = - 2.0 A Min - 30 Typ Max Unit V - 32 4 -1 -3 - 100 -1 - 10 -3 0.084 0.120 6 0.100 0.145 mV/°C V nA µA A Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 365 VDS = - 15 V, VGS = 0 V, f = 1 MHz 68 51 4.1 VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A f = 1 MHz VDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 1.2 1.7 9.2 24 60 25 15 4 VDD = - 15 V, RL = 7.5 Ω ID ≅ - 2 A, VGEN = - 10 V, Rg = 1 Ω 10 15 6 TC = 25 °C IS = - 2 A, VGS = 0 V - 0.85 23 IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C 15 9 14 40 100 40 25 8 20 25 12 - 1.6 - 6.5 - 1.2 35 23 ns Ω 6.2 nC pF A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74438 S-70308-Rev. B, 12-Feb-07 New Product Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) 4V 6 I D - Drain Current (A) 1.6 2.0 1.2 TJ = 125 °C 0.8 25 °C 0.4 4 2 3V - 55 °C 0 0.0 0.0 0.6 1.2 1.8 2.4 3.0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 600 Transfer Characteristics r DS(on) - On-Resistance ( ) 0.16 VGS = 4.5 V 0.12 VGS = 10 V 0.08 C - Capacitance (pF) 480 Ciss 360 240 0.04 120 Crss Coss 0.00 0.0 0 1.6 3.2 4.8 6.4 8.0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 2.5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V VDS = 15 V 6 VDS = 20 V rDS(on) - On-Resistance (Normalized) 1.4 1.6 ID = 2 A Capacitance VGS = 10 V 1.2 VGS = 4.5 V 4 1.0 2 0.8 0 0 2 4 6 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge Document Number: 74438 S-70308-Rev. B, 12-Feb-07 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.5 ID = 2 A r DS(on) - On-Resistance ( ) 0.4 I S - Source Current (A) TJ = 150 °C 1 0.3 0.1 TJ = 25 °C 0.2 TJ = 125 °C 0.1 TJ = 25 °C 0.01 0.0 0.0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 30 On-Resistance vs. Gate-to-Source Voltage 0.4 VGS(th) Variance (V) ID = 250 µA 24 0.0 Power (W) 0.2 ID = 5 mA 18 12 - 0.2 6 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (°C) Threshold Voltage 10 Limited by rDS(on) I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 1 ms 10 ms 100 ms 1s 10 s dc 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 *VGS VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74438 S-70308-Rev. B, 12-Feb-07 New Product Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.5 3.5 3.6 I D - Drain Current (A) Power Dissipation (W) 2.8 2.7 2.1 1.8 Package Limited 1.4 0.9 0.7 0.0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* 1.20 Power Derating, Junction-to-Foot 0.96 Power Dissipation (W) 0.72 0.48 0.24 0.00 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74438 S-70308-Rev. B, 12-Feb-07 www.vishay.com 5 New Product Si1473DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74438. www.vishay.com 6 Document Number: 74438 S-70308-Rev. B, 12-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1